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W25Q128BV 参数 Datasheet PDF下载

W25Q128BV图片预览
型号: W25Q128BV
PDF下载: 下载PDF文件 查看货源
内容描述: 具有双路和四路SPI 3V 128M位串行闪存 [3V 128M-BIT SERIAL FLASH MEMORY WITH DUAL AND QUAD SPI]
分类和应用: 闪存
文件页数/大小: 74 页 / 756 K
品牌: WINBOND [ WINBOND ]
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W25Q128BV  
7.2.7 Write Disable (04h)  
The Write Disable instruction (Figure 6) resets the Write Enable Latch (WEL) bit in the Status Register to  
a 0. The Write Disable instruction is entered by driving /CS low, shifting the instruction code “04h” into the  
DI pin and then driving /CS high. Note that the WEL bit is automatically reset after Power-up and upon  
completion of the Write Status Register, Erase/Program Security Registers, Page Program, Quad Page  
Program, Sector Erase, Block Erase and Chip Erase instructions.  
Write Disable instruction can also be used to invalidate the Write Enable for Volatile Status Register  
instruction.  
/CS  
Mode 3  
Mode 0  
0
1
2
3
4
5
6
7
Mode 3  
Mode 0  
CLK  
Instruction (04h)  
High Impedance  
DI  
(IO0)  
DO  
(IO1)  
Figure 6. Write Disable Instruction Sequence Diagram  
Publication Release Date: April 01, 2011  
Revision E  
- 23 -  
 
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