WILLAS
1.0A SUFRACE MOUNT EFFICIENT FAST RECTIFIERS-50-600V
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123-L PACKAGE
SOD-123
PACKAGE
•
Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
•
Low profile surface mounted application in order to
Rating and characteristic
optimize board space.
•
Low power loss, high efficiency.
•
High current capability, low forward voltage drop.
•
High surge capability.
for overvoltage protection.
•
Guardring
FIG.1-TYPICAL FORWARD
•
Ultra high-speed switching.
CHARACTERISTICS
•
Silicon epitaxial planar chip, metal silicon junction.
Lead-free parts meet environmental standards of
•
10
MIL-STD-19500 /228
UFM101-M
-
UFM103-M
•
RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
SOD-123H
FM120-M
UFM101-M
THRU
FM1200-M
UFM105-M
Pb Free Product
THRU
Features
Package outline
curves
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
FIG.2-TYPICAL FORWARD CURRENT
DERATING CURVE
0.071(1.8)
0.056(1.4)
AVERAGE FORWARD CURRENT,(A)
1.2
1.0
0.8
0.6
0.4
P.C.B. Mounted on
0.2" x 0.2" (5 mm x 5 mm)
Copper Pad Areas
0.040(1.0)
0.024(0.6)
INSTANTANEOUS FORWARD CURRENT,(A)
Mechanical data
•
•
Case : Molded plastic, SOD-123H
,
TJ=25°C
•
Terminals :Plated terminals, solderable per MIL-STD-750
Method 2026
1
UFM104-M
Epoxy : UL94-V0 rated flame retardant
0.031(0.8) Typ.
0.2
0.031(0.8) Typ.
0
0
25
50
75
100
125
150
175
•
0.1
Polarity : Indicated by cathode band
•
Mounting Position : Any
UFM105-M
•
Weight : Approximated 0.011 gram
0.4
0.6
0.8
1.0
1.2
1.4
1.6
LEAD TEMPERATURE (°C)
Dimensions in inches and (millimeters)
0.01
PEAK FORWAARD SURGE CURRENT,(A)
Ratings at 25℃ ambient temperature unless otherwise specified.
FORWARD VOLTAGE,(V)
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
Marking Code
FIG.4-MAXIMUM NON-REPETITIVE
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
SURGE CURRENT FORWARD
1.8
2.0
50
pulse width =300μs
1% duty cycle
40
FIG.3- TEST CIRCUIT DIAGRAM AND REVERSE
RATINGS
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
UN
RECOVERY TIME CHARACTERISTICS
Maximum Recurrent Peak Reverse Voltage
V
RRM
Maximum
50
W
RMS Voltage
NONINDUCTIVE
10
W
NONINDUCTIVE
12
20
14
30
V
RMS
V
DC
I
O
I
FSM
(NOTE 2)
PULSE
(+)
( )
20
13
30
21
30
14
40
28
40
15
50
35
50
16
T =25 C
60
J
18
80
56
80
8.3ms Single Half
Sine Wave
10
100
70
115
150
105
150
120
200
140
200
Volt
42
60
1.0
10
30
40
120
JEDEC method
Volt
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
20
10
100
Volt
(+)
Am
Peak Forward Surge Current 8.3 ms single half sine-wave
GENERATOR
(approx.)
( )
superimposed on rated load (JEDEC method)
25Vdc
D.U.T.
0
1
5
50
100
Am
Typical Thermal
Typical Junction Capacitance (Note 1)
Operating Temperature Range
Input Impedance= 1 megohm.22pF.
NOTES: 1. Rise Time= 7ns max.,
Storage Temperature Range
max., Source Impedance= 50 ohms.
2. Rise Time= 10ns
1
W
NON-
Resistance (Note
INDUCTIVE
OSCILLISCOPE
2)
(NOTE 1)
R
ΘJA
C
J
T
J
TSTG
NUMBER OF CYCLES AT 60Hz
-55 to +125
-55 to +150
℃/W
PF
℃
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
trr
Maximum Average Reverse Current at
|
@T A=25℃
+0.5A
Rated DC Blocking Voltage
|
|
|
|
|
|
|
-
65
to +175
FIG.5-TYPICAL JUNCTION CAPACITANCE
℃
35
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
UNI
V
F
@T A=125℃
0.50
JUNCTION CAPACITANCE,(pF)
30
25
20
15
10
5
0.70
0.5
10
0.85
I
R
T
J
=25 C
f=1.0MHZ
Vsig = 50mVp-p
0.9
0.92
Volt
mAm
NOTES:
0
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
-0.25A
2- Thermal Resistance From Junction to Ambient
-1.0A
1cm
SET TIME BASE FOR
10 / 20ns / cm
0
.01
.05
.1
.5
1
5
10
50
100
2012-06
REVERSE VOLTAGE,(V)
WILLAS ELECTRONIC CORP.
2012-1
WILLAS ELECTRONIC CORP.
WILLAS [ WILLAS ELECTRONIC CORP ]
