WBFBP-03B Plastic-Encapsulate
RECTIFIERS -20V- 200V
Transistors
1.0A SURFACE MOUNT SCHOTTKY BARRIER
SOD-123
•
Batch process design, excellent power dissipation offers
TRANSISTOR
better reverse leakage current and thermal resistance.
•
Low profile surface mounted application in order to
optimize board space.
DESCRIPTION
•
Silicon Transistor
PNP Epitaxial
Low power loss, high efficiency.
•
High current capability, low forward voltage drop.
FEATURES
•
High surge capability.
•
Guardring for overvoltage protection.
Epitaxial Planar Die Construction
•
Ultra high-speed switching.
Complementary NPN Type Available (TK3904NND03)
•
Silicon epitaxial planar chip, metal silicon junction.
Ultra-Small Surface Mount Package
environmental standards of
•
Lead-free parts meet
Also Available in Lead Free Version
MIL-STD-19500 /228
Halogen free product for packing code suffix "H"
APPLICATION
Mechanical data
General Purpose Amplifier, switching
For portable
•
equipment:(i.e.
rated flame retardant
MD,CD-ROM,
Epoxy : UL94-V0
Mobile phone,MP3,
DVD-ROM,
•
Case
book PC, etc.)
SOD-123H
Note
: Molded plastic,
,
•
Terminals :Plated terminals,
Pb-Free package is available
solderable per MIL-STD-750
WILLAS
TK390
FM120-M
D03
THRU
FM1200-M
PACKAGE
Pb Free Produ
Features
Package outline
SOD-123H
C
0.012(0.3) Typ.
WBFBP-03B
(1.2×1.2×0.5)
unit: mm
TOP
0.146(3.7)
0.130(3.3)
B
1. BASE
2. EMITTER
3. COLLECTOR
E
C
0.071(1.8)
0.056(1.4)
•
RoHS product for packing code suffix "G"
BACK
E
B
0.040(1.0)
0.024(0.6)
•
Weight : Approximated 0.011 gram
im
-5
12
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
MAXIMUM RATINGS(T
a
=25℃ unless otherwise noted)
Ratings at 25℃ ambient temperature unless otherwise specified.
Symbol
Parameter
Value
Single phase half wave, 60Hz, resistive of inductive load.
V
CBO
For
Collector-Base
derate current by 20%
-40
capacitive load,
Voltage
ina
Unit
V
14
40
28
40
15
50
35
50
20
V
RRM
-200
V
RMS
V
DC
I
O
14
150
13
V
30
mA
21
mW
30
℃/W
20
833
I
FSM
RoHS product for
:
packing
by cathode band
code suffix ”G”
•
Polarity Indicated
Halogen free product for packing code suffix “H”
•
Mounting Position : Any
Method 2026
V
CEO
Pr
el
V
EBO
Marking Code
Emitter-Base Voltage
P
D
Maximum RMS Voltage
Power Dissipation
Collector-Emitter Voltage
RATINGS
-40
V
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200
16
60
42
60
1.0
30
ry
B
℃
Min
I
C
=-10μA,I
E
=0
-55 to +125
I
C
=-1mA,I
B
=0
I
E
=-10μA,I
C
=0
0.031(0.8) Typ.
0.031(0.8) Typ.
Dimensions in inches and (millimeters)
MARKING:3N
C
3N
I
C
Maximum Recurrent Peak
-Continuous
Collector Current
Reverse Voltage
E
80
56
80
18
10
100
70
100
115
150
105
150
120
200
140
200
R
Ɵ
JA
Maximum DC Blocking Voltage
Thermal Resistance, Junction to Ambient
℃
superimposed on rated load (JEDEC method)
ELECTRICAL CHARACTERISTICS (T
a
=25℃ unless otherwise specified)
Typical Thermal Resistance (Note 2)
R
ΘJA
Parameter
Collector-base breakdown voltage
Operating Temperature Range
Typical Junction Capacitance (Note 1)
T
J
Maximum Average Forward Rectified Current
Operating Temperature
T
stg
Peak
Storage
Surge
Temperature
Forward
and
Current 8.3 ms single half sine-wave
150
-55~150
Typ
Symbol
V
(BR)CBO
V
(BR)EBO
I
CEX
I
EBO
C
J
T
J
Test conditions
-40
-5
0.70
40
120
Max
Unit
V
V
V
-55 to +150
Collector-emitter breakdown voltage
Storage Temperature Range
V
(BR)CEO
TSTG
-40
-
65
to +175
-0.05
-0.1
Emitter-base breakdown voltage
Emitter cut-off current
CHARACTERISTICS
Collector cut-off current
Maximum Forward Voltage at 1.0A DC
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-
V
F
I
R
V
CE
=-30V,V
EB(off)
=-3V
V
EB
=-5V,I
C
=0
V
CE
=-1V,I
C
=-0.1mA
V
CE
=-1V,I
C
=-1mA
V
CE
=-1V,I
C
=-10mA
V
CE
=-1V,I
C
=-50mA
V
CE
=-1V,I
C
=-100mA
I
C
=-10mA,I
B
=-1mA
I
C
=-50mA,I
B
=-5mA
I
C
=-10mA,I
B
=-1mA
I
C
=-50mA,I
B
=-5mA
0.50
0.85
0.5
μA
μA
0.9
0.92
DC current gain
Rated DC Blocking Voltage
NOTES:
Maximum Average Reverse Current at @T A=25℃
h
FE(1)
@T A=125℃
h
FE(2)
h
h
FE(4)
h
FE(5)
V
CE(sat)1
V
CE(sat)2
V
BE(sat)1
V
BE(sat)2
f
T
60
10
80
100
60
30
-0.25
-0.4
-0.65
250
WILLAS
-0.85
-0.95
V
V
V
V
300
FE(3)
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
2012-06
2- Thermal Resistance From Junction to Ambient
V
CE
=-20V,I
C
=-10mA,f=100MHz
MHz
ELECTRONIC CO
2012-
0
WILLAS ELECTRONIC CORP.
WILLAS [ WILLAS ELECTRONIC CORP ]
