FM120-M
THRU
TK3904NND03
WBFBP-03B Plastic-Encapsulate
RECTIFIERS -20V- 200V
FM1200-M
1.0A SURFACE MOUNT SCHOTTKY BARRIER
Transistors
SOD-123
•
Batch process design, excellent power dissipation offers
TRANSISTOR
better reverse leakage current and thermal resistance.
•
Low profile surface mounted application in order to
DESCRIPTION
optimize board space.
•
Low power loss, high efficiency.
NPN Epitaxial Silicon Transistor
•
High current capability, low forward voltage drop.
FEATURES
•
High surge capability.
•
Guardring for overvoltage
Epitaxial Planar Die Construction
protection.
•
Ultra high-speed switching.
Complementary PNP Type Available (TK3906NND03)
•
Silicon
Ultra-Small Surface
epitaxial planar chip, metal silicon junction.
Mount Package
•
Lead-free parts meet environmental standards of
Also Available in Lead Free
/228
MIL-STD-19500
Version
•
RoHS product for packing code suffix "G"
APPLICATION
Halogen free product for packing code suffix "H"
General Purpose Amplifier, switching
Mechanical data
For portable
•
equipment:(i.e.
rated flame retardant
MD,CD-ROM,
Epoxy : UL94-V0
Mobile phone,MP3,
DVD-ROM, Note book PC, etc.)
•
Case : Molded plastic, SOD-123H
Pb-Free package is available
solderable per MIL-STD-750 ,
•
Terminals :Plated terminals,
Method
RoHS product for packing
2026
suffix ”G”
code
•
Polarity : Indicated by cathode band
Halogen free product for packing code suffix “H”
WILLAS
PACKAGE
C
Pb Free Produ
Features
Package outline
WBFBP-03B
(1.2×1.2×0.5)
unit: mm
SOD-123H
TOP
0.146(3.7)
0.130(3.3)
B
C
E
0.012(0.3) Typ.
1. BASE
2. EMITTER
3. COLLECTOR
BACK
E
B
0.071(1.8)
0.056(1.4)
0.040(1.0)
0.024(0.6)
•
Mounting Position : Any
•
Weight : Approximated 0.011 gram
Symbol
im
12
20
14
MAXIMUM RATINGS AND ELECTRICAL
MAXIMUM RATINGS(T
a
=25℃ unless otherwise noted)
CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Parameter
Single phase half wave, 60Hz, resistive of inductive load.
Collector-Base Voltage
V
CBO
For capacitive load, derate current by 20%
ina
B
E
V
RRM
V
RMS
V
DC
I
O
13
30
21
30
14
40
28
40
15
50
35
50
20
I
FSM
ry
C
Value
60
40
6
16
60
0.2
42
0.15
60
MARKING:1N
0.031(0.8) Typ.
0.031(0.8) Typ.
1N
Dimensions in inches and (millimeters)
Unit
V
V
18
80
56
80
1.0
30
10
V
100
A
100
℃
70
W
115
150
105
150
120
200
140
200
V
CEO
I
C
T
J
T
stg
Collector-Emitter Voltage
RATINGS
Maximum
Collector Current -Continuous
Recurrent Peak Reverse Voltage
Maximum DC Blocking Voltage
RMS Voltage
P
C
Maximum
Collector Dissipation
Maximum Average Forward Rectified Current
Junction Temperature
Pr
el
Emitter-Base Voltage
V
EBO
Marking Code
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200
150
Storage Temperature
-55~150
℃
ELECTRICAL CHARACTERISTICS (T
a
=25℃ unless otherwise specified)
superimposed on rated load (JEDEC method)
Typical Thermal Resistance (Note 2)
R
ΘJA
Typical
Parameter
Junction Capacitance (Note 1)
Operating Temperature Range
Collector-base breakdown voltage
Peak Forward Surge Current 8.3 ms single half sine-wave
Symbol
C
J
Test conditions
-55
V
(BR)CBO
T
J
I
C
=10μA,I
E
=0
to +125
I
C
V
(BR)CEO
TSTG
=1mA,I
B
=0
V
(BR)EBO
I
CEX
I
E
=10μA,I
C
=0
V
EB
=5V,I
C
=0
V
CE
=1V,I
C
=0.1mA
V
CE
=1V,I
C
=1mA
V
CE
=1V,I
C
=50mA
V
CE
=1V,I
C
=100mA
I
C
=10mA,I
B
=1mA
I
C
=50mA,I
B
=5mA
I
C
=10mA,I
B
=1mA
I
C
=50mA,I
B
=5mA
V
F
V
CE
=30V,V
EB(off)
=3V
0.50
I
R
40
Min
120
Typ
Max
Unit
V
V
V
60
6
-55 to +150
Storage Temperature Range
Collector-emitter breakdown voltage
-
65
to +175
Emitter-base breakdown voltage
40
Collector cut-off current
at 1.0A DC
Maximum Forward Voltage
CHARACTERISTICS
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-
I
EBO
Emitter cut-off current
Maximum Average Reverse Current at @T A=25℃
h
FE(1)
@T A=125℃
Rated DC Blocking Voltage
0.70
0.5
0.85
0.05
μA
0.9
μA
0.92
0.1
40
10
70
100
60
30
0.2
0.3
0.65
300
WILLAS
0.85
0.95
V
V
V
V
300
DC current gain
1 MHZ and applied reverse voltage of
h
FE(3)
1- Measured at
4.0 VDC.
V
CE
=1V,I
C
=10mA
NOTES:
h
FE(2)
h
FE(4)
h
FE(5)
V
CE(sat)1
V
CE(sat)2
V
BE(sat)1
V
BE(sat)2
f
T
2- Thermal Resistance From Junction to Ambient
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
2012-06
V
CE
=20V,I
C
=10mA,f=100MHz
MHz
ELECTRONIC CO
2012-
0
WILLAS ELECTRONIC CORP.
WILLAS [ WILLAS ELECTRONIC CORP ]
