WILLAS
Dual Transient Voltage Suppressors Array for ESD Protection
1.0A SURFACE MOUNT SCHOTTKY
Features
BARRIER RECTIFIERS -20V- 200V
SOD-123
PACKAGE
FM120-M
SOTxxC
THRU
FM1200-M
Pb Free Product
Package outline
SOD-123H
•
Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
•
Low profile surface mounted application in order to
optimize board space.
•
Low power loss, high efficiency.
•
High current capability, low forward voltage drop.
•
High surge capability.
•
Guardring for overvoltage protection.
•
Ultra high-speed switching.
•
Silicon epitaxial planar chip, metal silicon junction.
•
Lead-free parts meet environmental standards of
MIL-STD-19500 /228
•
RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
Mechanical data
0.040(1.0)
Fig3.Power Derating Curve
0.024(0.6)
UL94-V0 rated flame retardant
•
Epoxy :
Fig2. Pulse Waveform
Application Note
SOD-123H
•
Case : Molded plastic,
0.031(0.8) Typ.
0.031(0.8) Typ.
,
•
Terminals :Plated terminals, solderable
a major cause of failure in electronic systems. Transient Voltage
Electrostatic discharge (ESD) is
per MIL-STD-750
Ratings at 25℃ ambient temperature unless otherwise specified.
The SOTxxC array is the ideal board evel protection
Single phase half wave, 60Hz, resistive of inductive load.
The tiny SOT-23 package allows design flexibility
For capacitive load, derate current by 20%
Marking Code
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
Suppressors (TVS) are an ideal choice for ESD protection. They are capable of clamping the incoming
Dimensions in inches and (millimeters)
•
Polarity : Indicated by cathode band
transient to a low enough level such that damage to the protected
semiconductor is prevented.
•
Mounting Position : Any
Surface mount TVS arrays offer the best choice for minimal lead inductance. They serve as parallel
•
Weight : Approximated 0.011 gram
protection elements, connected between the signal line to ground. As the transient rises above the operating
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
voltage of the device, the TVS array becomes a low impedance path diverting the transient current to ground.
of ESD sensitive semiconductor components.
in the design of high density boards where the space
13
30
21
30
14
40
28
40
15
50
35
50
16
60
42
60
1.0
30
18
80
56
80
10
100
70
100
115
150
105
150
120
200
140
200
Method 2026
saving is at a premium. This enables to shorten
FM120-M
H FM130-MH
FM140-MH FM150-MH
hardening against ESD.
FM1150-MH FM1200-MH
U
the routing and contributes to
FM160-MH FM180-MH FM1100-MH
SYMBOL
RATINGS
V
RRM
V
RMS
V
DC
I
O
I
FSM
R
ΘJA
C
J
T
J
TSTG
12
20
14
20
V
V
V
A
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
A
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
Operating Temperature Range
Storage Temperature Range
-55 to +125
40
120
-55 to +150
℃
-
65
to +175
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
U
V
F
@T A=125℃
0.50
0.70
0.5
10
0.85
0.9
0.92
V
I
R
m
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-09
2012-06
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP
WILLAS [ WILLAS ELECTRONIC CORP ]
