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SL22-M 参数 Datasheet PDF下载

SL22-M图片预览
型号: SL22-M
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内容描述: 2.0A低VF肖特基整流器, 20V- 40V SOD- 123 - L封装 [2.0A LOW VF SCHOTTKY BARRIER RECTIFIERS-20V-40V SOD-123-L PACKAGE]
分类和应用:
文件页数/大小: 4 页 / 303 K
品牌: WILLAS [ WILLAS ELECTRONIC CORP ]
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2.0A
LOW VF
SCHOTTKY BARRIER RECTIFIERS-20V-40V
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123-L PACKAGE
SOD-123
PACKAGE
WILLAS
FM120-M
THRU
SL22-M
FM1200-M
SL24-M
SOD-123H
Pb Free Product
Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
Features
Package outline
Low profile surface mounted application in order to
Low power loss, high efficiency.
Batch process design, excellent
forward
dissipation offers
High current capability, low
power
voltage drop.
better reverse leakage current and thermal resistance.
profile surface mounted
Low
High surge capability.
application in order to
Guardring
space.
optimize board
for overvoltage protection.
plastic SMD package.
Tiny
Ultra high-speed switching.
power
epitaxial
efficiency.
Low
Silicon
loss, high
planar chip, metal silicon junction.
current capability, low forward voltage drop.
High
Lead-free parts meet environmental standards of
surge capability.
High
MIL-STD-19500 /228
RoHS product for packing code suffix "G"
Guardring for overvoltage protection.
Halogen free product for packing code suffix "H"
Ultra high-speed switching.
Mechanical data
Silicon epitaxial planar chip, metal silicon junction.
Epoxy : UL94-V0 rated
Moisture Sensitivity Level 1
flame retardant
Case : Molded plastic, SOD-123H
,
Terminals :Plated terminals, solderable per MIL-STD-750
optimize
Features
board space.
Package outline
SOD-123-L
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.154(3.9)
0.138(3.5)
0.071(1.8)
0.012(0.3) Typ.
0.056(1.4)
0.075(1.9)
0.060(1.5)
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
0.031(0.8) Typ.
Mechanical data
Method 2026
0.067(1.7)
0.051(1.3)
0.028(0.7)
Dimensions in inches and (millimeters)
Typ.
Polarity : Indicated
flame retardant
Epoxy : UL94-V0 rated
by cathode band
Mounting
plastic,
Any
Case : Molded
Position :
SOD-123-L
Weight : Approximated 0.011 gram
Terminals :Plated terminals, solderable per MIL-STD-750,
Method 2026
0.028(0.7) Typ.
Dimensions in inches and (millimeters)
 
MAXIMUM RATINGS
Polarity : Indicated by cathode band
AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Mounting Position : Any
Single phase half wave, 60Hz, resistive of inductive load.
Weight : Approximated 0.018 gram
For capacitive load, derate current by 20%
RATINGS
Marking Code
Maximum
o
15
18
10
115
T
A
=25 C
16
unless otherwise noted)
20
30
40
50
60
80
100
150
Maximum Recurrent Peak Reverse Voltage
V
RRM
TYP. MAX. UNIT
PARAMETER
CONDITIONS
Symbol MIN.
14
21
28
35
42
56
70
105
Maximum RMS Voltage
V
RMS
I
O
2.0
A
Forward rectified current
See Fig.2
Maximum DC Blocking Voltage
20
30
40
50
60
80
100
150
V
DC
Maximum Average Forward Rectified Current
8.3ms single half sine-wave superimposed on
50
I
FSM
1.0
Forward surge current
A
I
O
rate load (JEDEC methode)
 
 
Peak Forward Surge Current 8.3 ms single half sine-wave
30
I
FSM
O
V
R
= V
RRM
T
J
= 25 C
I
R
mA
1.0
Reverse current
superimposed on rated load (JEDEC method)
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
UN
12
13
14
ratings and Electrical Characteristics
(AT
120
200
140
200
Volt
Volt
Volt
Amp
 
 
Amp
Typical
Diode junction capacitance
Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
Operating Temperature Range
Storage Temperature Range
Storage temperature
 
R
ΘJA
f=1MHz and applied 4V DC reverse voltage
 
C
J
-55 to +125
T
J
TSTG
T
STG
 
C
J
40
120
 
-55
 
160
pF
O
℃/W
+150
-55 to +150
C
PF
-
65
to +175
 
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
 
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
UNI
V
F
@T A=125℃
0.50
0.70
0.5
0.85
0.9
0.92
 
Volt
I
R
SYMBOLS
NOTES:
*1
V
RRM
(V)
20
V
RMS
*2
(V)
14
*3
V
R
(V)
20
*4
V
F
(V)
0.38
Operating
temperature
T
J
, (
O
C)
-55 to +100
10
*1 Repetitive peak reverse voltage
mAm
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
*2 RMS voltage
*3 Continuous reverse voltage
*4 Maximum forward voltage@I
F
=2.0A
 
 
2- Thermal Resistance From Junction to Ambient
SL22-M
SL24-M
40
28
40
0.40
2012-06
WILLAS ELECTRONIC CORP.
201 -
WILLAS ELECTRONIC CORP.