WILLAS
Transient Voltage Suppressors for ESD Protection
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123
•
Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
•
Low profile surface mounted application in order to
optimize board space.
•
Low power loss, high efficiency.
ELECTRICAL CHARACTERISTICS
(Ta = 25°C unless otherwise noted)
•
High current capability, low forward voltage drop.
•
High surge capability.
Symbol
•
Guardring for overvoltage protection.
Parameter
•
Ultra high-speed switching.
I
PP
Maximum Reverse Peak Pulse Current
•
Silicon epitaxial planar chip, metal silicon junction.
•
Lead-free parts meet environmental standards of
V
C
Clamping Voltage @ I
PP
MIL-STD-19500 /228
V
RWM
Working Peak
packing code suffix
•
RoHS product for
Reverse Voltage
"G"
Halogen free product for packing code suffix "H"
FM120-M
SESDL5V0WB
THRU
FM1200-M
Pb Free Product
PACKAGE
Features
Package outline
SOD-123H
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
I
R
V
BR
I
T
C
Mechanical data
Maximum Reverse Leakage Current @ V
RWM
Breakdown Voltage @ I
T
•
Epoxy : UL94-V0 rated flame retardant
Test Current
•
Case : Molded plastic, SOD-123H
,
Max. Capacitance @V
R
=0 and f =1MHz
•
Terminals :Plated terminals, solderable per MIL-STD-750
Method 2026
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
0.031(0.8) Typ.
•
Polarity : Indicated by cathode band
•
Mounting Position : Any
ELECTRICAL CHARACTERISTICS
(Ta = 25°C unless otherwise noted
)
•
Weight : Approximated 0.011 gram
I (μA)
V (V) @ I
V
Marking
Ratings at 25℃ ambient temperature unless otherwise specified.
Max
Max
Min
Single phase half wave, 60Hz, resistive of inductive load.
EB
5.0
1.0
5.8
SESDL5V0WB
For capacitive load, derate current by 20%
RATINGS
Marking Code
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
Dimensions in inches and (millimeters)
Device
(Note 2)
@ V
ELECTRICAL CHARACTERISTICS
5 A
(V)
@I
PP
=
MAXIMUM RATINGS AND
RWM
Max
mA
V
Device
RWM
R
BR
T
I
T
V
C
I
PP
(A)
Max
V
C
(V)
@Max I
PP
Max
C (pF)
Max
8.8
1.0
10
11.2
12.5
30
2. V
BR
is measured with a pulse test current I
T
at an ambient temperature of 25°C.
V
RRM
V
RMS
V
DC
I
O
I
FSM
R
ΘJA
C
J
T
J
TSTG
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
U
12
20
14
20
13
30
21
30
14
40
28
40
15
50
35
50
16
60
42
60
1.0
30
18
80
56
80
10
100
70
100
115
150
105
150
120
200
140
200
V
V
V
A
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
A
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
Operating Temperature Range
Storage Temperature Range
-55 to +125
40
120
-55 to +150
℃
-
65
to +175
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
U
V
F
@T A=125℃
0.50
0.70
0.5
10
0.85
0.9
0.92
V
I
R
m
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-09
2012-06
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP
WILLAS [ WILLAS ELECTRONIC CORP ]
