FM120-M
SESDBV5V0WB
THRU
Transient Voltage Suppressors for ESD Protection
FM1200-M
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123
•
Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
•
Low profile surface mounted application in order to
optimize board space.
•
Low power loss, high efficiency.
ELECTRICAL CHARACTERISTICS
(Ta = 25°C unless otherwise noted)
•
High current capability, low forward voltage drop.
•
High surge capability.
•
Guardring for overvoltage protection.
Symbol
high-speed switching.
Parameter
•
Ultra
epitaxial planar chip, metal silicon junction.
I
PP
•
Silicon
Maximum Reverse Peak Pulse Current
•
Lead-free parts meet environmental standards of
V
C
MIL-STD-19500 /228
Clamping Voltage @ I
PP
•
V
RWM
RoHS product for packing code suffix "G"
Working Peak Reverse Voltage
Halogen free product for packing code suffix "H"
SOD-123H
WILLAS
PACKAGE
Pb Free Product
Features
Package outline
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
I
R
Maximum Reverse
Mechanical data
Leakage Current @ V
RWM
0.040(1.0)
0.024(0.6)
V
BR
•
Epoxy :
Breakdown Voltage @ I
T
UL94-V0 rated flame retardant
I
T
•
Case : Molded plastic, SOD-123H
Test Current
•
Terminals :Plated terminals, solderable per MIL-STD-750
Method 2026
,
0.031(0.8) Typ.
0.031(0.8) Typ.
•
Polarity : Indicated by cathode band
•
Mounting Position : Any
•
Weight : Approximated 0.011 gram
Dimensions in inches and (millimeters)
ELECTRICAL CHARACTERISTICS
AND ELECTRICAL CHARACTERISTICS
MAXIMUM RATINGS
(Ta=25℃ unless otherwise noted)
Ratings at 25℃ ambient temperature unless otherwise specified.
BR
(V)@I
T
V
RWM
I
R
(μA)
V
Device
of inductive load.
Single phase half wave, 60Hz, resistive
(V)
(Note2)
Device*
@V
RWM
For capacitive load, derate current by 20%
Marking
SESDBV5V0WB
Marking Code
RATINGS
I
T
(mA)
-
1
14
40
40
V
C
(V)
@I
PP
=5A
-
Typ
2
C(pF)@
V
R
=0V,f=1MHz
Max
-
Max
5
HB
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
Max
1
Min
Max
8
13
30
30
Maximum Recurrent
available upon request.
*Other voltages
Peak Reverse Voltage
V
RRM
V
DC
I
O
I
FSM
R
ΘJA
C
J
T
J
TSTG
5.6
12
20
20
15
10
50
50
16
60
42
60
18
80
56
80
10
100
70
100
115
150
105
150
120
200
140
200
V
2. V
BR
is measured
Maximum RMS Voltage
with
a pulse test current I
T
at
RMS
ambient temperature of 25℃.
35
14
21
28
V
an
V
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
V
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
1.0
30
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
Operating Temperature Range
Storage Temperature Range
-55 to +125
40
120
-55 to +150
℃
-
65
to +175
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
U
V
F
@T A=125℃
0.50
0.70
0.5
10
0.85
0.9
0.92
V
I
R
m
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-09
2012-06
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP
WILLAS [ WILLAS ELECTRONIC CORP ]
