WILLAS
•
Batch process design, excellent power dissipation offers
better reverse leakage
PIN CONFIGURATION
current and thermal resistance.
•
Low profile surface mounted application in order to
optimize board space.
FM120-M
SESD099-04AT1
THRU
FM1200-M
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123
PACKAGE
4-CHANNEL LOW CAPACITANCE ESD PROTECTION DIODES ARRAY
Package outline
Features
SOD-123H
Pb Free Product
•
Low power loss, high efficiency.
•
High current capability, low forward voltage drop.
•
High surge capability.
•
Guardring for overvoltage protection.
•
Ultra high-speed switching.
•
Silicon epitaxial planar chip, metal silicon junction.
•
Lead-free parts meet environmental standards of
•
MIL-STD-19500 /228
RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
Mechanical data
SOT-23-6
•
Epoxy : UL94-V0 rated flame retardant
•
Case : Molded plastic, SOD-123H
,
•
Terminals :Plated terminals, solderable per MIL-STD-750
ABSOLUTE MAXIMUM RATINGS
Method 2026
0.031(0.8) Typ.
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
Characteristics
•
Polarity : Indicated by cathode band
Peak
Mounting Position : Any
•
Pulse Power(8/20μs)
•
Pulse
: Approximated 0.011 gram
Peak
Weight
Current(8/20μs)
Symbol
P
PP
I
PP
Ratings
in inches and (millimeters)
Unit
Dimensions
150
5
W
A
kV
kV
°C
°C
V
ESD1
±15kV
ESD per IEC 61000-4-2(Air)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
ESD per IEC 61000-4-2(Contact)
Single phase half wave, 60Hz, resistive of inductive load.
Operating Temperature Range
For capacitive load, derate current by 20%
V
ESD2
T
opr
T
stg
±8kV
-55 ~ +125
-55 ~ +150
16
60
42
60
1.0
30
40
120
Storage Temperature Range
RATINGS
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
Marking Code
Maximum Recurrent Peak Reverse Voltage
Maximum DC Blocking Voltage
V
RRM
V
DC
I
O
12
20
20
13
30
21
30
14
40
28
40
15
50
35
50
18
80
56
80
10
100
70
100
115
150
105
150
120
200
140
200
V
Maximum RMS Voltage
V
RMS
ELECTRICAL CHARACTERISTICS
(T
amb
=25°C)
14
Maximum Average Forward Rectified Current
V
V
Characteristics
Symbol
Test Conditions
Min.
Typ.
Max.
5
Unit
V
Peak Forward Surge Current 8.3 ms single
V
RWM
half sine-wave
Any
superimposed on rated load (JEDEC method)
Reverse Working
Voltage
I/O
I
FSM
pin to GND
Reverse Breakdown
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
Voltage
Operating Temperature Range
Storage Temperature Range
V
BR
I
R
t
=1mA;
R
ΘJA
Any
C
J
pin to GND
I/O
Any I/O pin to GND
V
F
Positive pulse;
TSTG
6
V
μA
℃
Reverse Leakage
Current
T
V
RWM
J
=5V, T=25°C;
-55 to +125
-
65
to +175
1
-55 to +150
Positive Clamping
Maximum Forward Voltage at 1.0A DC
Rated DC Blocking Voltage
CHARACTERISTICS
I
PP
=1A, t
P
=8/20Μs;
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
SYMBOL
FM120-MH
0.50
0.70
8.5
I
R
Any I/O pin to GND
0.5
10
U
Voltage
Maximum Average Reverse Current at @T A=25℃
@T A=125℃
V
C1
12.0
0.85
V
0.9
0.92
V
m
Negative Clamping
NOTES:
I
PP
=1A, t
P
=8/20μS;
Negative pulse;
Any I/O pin to GND
0.35
1.8
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
Voltage
V
C2
V
2- Thermal Resistance From Junction to Ambient
Junction Capacitance
Between Channel
C
J1
C
J2
V
R
=0V, f=1MHz;
Between I/O pins
V
R
=0V, f=1MHz;
Any I/O pin to GND
0.45
0.9
pF
pF
Junction Capacitance
Between I/O And GND
2012-09
2012-06
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP
WILLAS [ WILLAS ELECTRONIC CORP ]
