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SEMFXXC 参数 Datasheet PDF下载

SEMFXXC图片预览
型号: SEMFXXC
PDF下载: 下载PDF文件 查看货源
内容描述: 5 ,线路瞬态电压抑制器阵列 [5-Line Transient Voltage Suppressor Array]
分类和应用:
文件页数/大小: 3 页 / 297 K
品牌: WILLAS [ WILLAS ELECTRONIC CORP ]
 浏览型号SEMFXXC的Datasheet PDF文件第1页浏览型号SEMFXXC的Datasheet PDF文件第3页  
WILLAS
5-Line Transient Voltage Suppressor Array
Electrical Parameter
Features
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123
PACKAGE
FM120-M
SEMFxxC
THRU
FM1200-M
Pb Free Product
Package outline
SOD-123H
Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
Symbol
profile surface mounted application in order to
Parameter
Low
optimize board space.
I
PP
Maximum Reverse Peak Pulse Current
Low power loss, high efficiency.
V
High current capability, low forward voltage drop.
Clamping Voltage @ I
PP
C
High surge capability.
V
RWM
Working Peak Reverse Voltage
Guardring for overvoltage protection.
Ultra high-speed switching.
Maximum Reverse Leakage Current @
I
R
Silicon epitaxial planar chip, metal silicon junction.
V
RWM
Lead-free parts meet environmental standards of
I
T
MIL-STD-19500 /228
Test Current
RoHS product for packing code suffix
I
T
V
BR
Breakdown Voltage @
"G"
I
F
Forward
data
Mechanical
Current
Halogen free product for packing code suffix "H"
UL94-V0
Voltage @ I
F
V
F
Epoxy :
Forward
rated flame retardant
Case : Molded plastic, SOD-123H
,
Terminals :Plated terminals, solderable per MIL-STD-750
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
0.031(0.8) Typ.
Electrical Characteristics
Method 2026
I
T
V
RWM
Part Numbers
Min.
Typ.
Max.
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
V
V
V
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
SEMF3V3C
5.3
5.6
5.88
Marking Code
Polarity : Indicated by cathode band
V
BR
Mounting Position : Any
Weight : Approximated 0.011 gram
Dimensions in inches and (millimeters)
C
I
R
Typ. 0v
bias
µA
1.0
16
60
42
60
1.0
 
30
18
80
56
80
mA
1
13
30
21
30
V
3.3
14
40
28
40
15
50
35
50
pF
50
10
100
70
100
 
SEMF05C
RATINGS
6.1
6.7
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
U
7.2
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
 
V
RRM
V
RMS
V
DC
I
O
 
I
FSM
R
ΘJA
C
J
T
J
TSTG
12
20
14
20
1
5.0
5
35
115
150
105
150
120
200
140
200
V
V
V
A
Typical Characteristics
Typical Thermal Resistance (Note 2)
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
 
 
A
 
Typical Junction Capacitance (Note 1)
Operating Temperature Range
Storage Temperature Range
 
-55 to +125
40
120
 
-55 to +150
 
-
65
to +175
 
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
 
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
U
V
F
@T A=125℃
0.50
0.70
0.5
10
0.85
0.9
0.92
 
V
I
R
m
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
 
 
Fig1. Non-Repetitive Peak Pulse Power vs. Pulse Time
Fig2. Power Derating Curve
2012-09
2012-06
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP