WILLAS
Low Capacitance Quad Array for ESD Protection Description
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123
PACKAGE
FM120-M
SEMF3V3LC
THRU
FM1200-M
Pb Free Product
Features
Electrical Parameter
excellent power dissipation offers
•
Batch process design,
better reverse leakage current and thermal resistance.
•
Low profile surface mounted application in order to
optimize board space.
•
Low power loss, high efficiency.
Symbol
Parameter
•
High current capability, low forward voltage drop.
capability.
•
High surge
Maximum Reverse Peak Pulse Current
I
PP
•
Guardring for overvoltage protection.
V
C
Clamping Voltage @ I
PP
•
Ultra high-speed switching.
Silicon
•
V
RWM
epitaxial planar chip, metal silicon junction.
Working Peak Reverse Voltage
•
Lead-free parts meet environmental standards of
Maximum
MIL-STD-19500 /228
Reverse Leakage Current
I
R
V
for
•
RoHS product
RWM
packing code suffix "G"
Halogen free product for packing code suffix "H"
I
T
Test Current
Package outline
SOD-123H
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
@
V
BR
Breakdown Voltage @ I
T
•
Epoxy : UL94-V0 rated flame retardant
I
F
Forward Current
•
Case : Molded plastic, SOD-123H
,
V
F
Forward Voltage @ I
F
•
Terminals :Plated terminals, solderable per MIL-STD-750
Method 2026
Mechanical data
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
0.031(0.8) Typ.
•
Polarity : Indicated by cathode band
Electrical Characteristics
•
Mounting Position : Any
Part Numbers
•
Weight : Approximated 0.011 gram
V
BR
Dimensions in inches and (millimeters)
V
F
Max.
V
15
50
35
50
C
I
F
Typ.
0v
bias
pF
10
100
70
100
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
I
T
V
RWM
I
R
Min.
Typ. Max.
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
V
V
V
mA
1
12
20
V
3.3
13
30
14
40
28
40
µA
1.0
mA
18
80
56
80
Marking Code
SEMF3V3LC
RATINGS
5.3
5.6
5.88
1.
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
U
1.25
16
60
42
60
200
28
1. Non-repetitive current per
Maximum Recurrent Peak Reverse Voltage
Figure
Maximum RMS Voltage
2. Only 1 diode
Maximum DC Blocking Voltage
V
RRM
115
150
105
150
120
200
140
200
V
14
21
V
RMS
under power. For 4 diodes under power
30
I
O
V
Maximum Average Forward Rectified Current
20
V
DC
3.
Capacitance of one diode at f=1MHz,T
A
=25℃
I
FSM
R
ΘJA
C
J
T
J
TSTG
V
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
Typical Characteristics
1.0
30
A
A
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
Operating Temperature Range
Storage Temperature Range
-55 to +125
40
120
-55 to +150
℃
-
65
to +175
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
U
V
F
@T A=125℃
0.50
0.70
0.5
10
0.85
0.9
0.92
V
I
R
m
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
Figure 1 Pulse Width
Figure 2 Power Derating Curve
2012-0
2012-06
WILLAS ELECTRONIC CORP.
CORP
WILLAS ELECTRONIC
WILLAS [ WILLAS ELECTRONIC CORP ]
