WILLAS
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123
PACKAGE
•
Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
•
Low profile surface mounted application in order to
optimize board space.
•
Low power loss, high efficiency.
•
High current capability, low forward voltage drop.
•
High surge capability.
•
Guardring for overvoltage protection.
•
Ultra high-speed switching.
•
Silicon epitaxial planar chip, metal silicon junction.
•
Lead-free parts meet environmental standards of
MIL-STD-19500 /228
RoHS product for packing code suffix "G"
•
Halogen free product for packing code suffix "H"
30V N-Channel Enhancement-Mode MOSFET
Features
FM120-M
THRU
SE4812LT1
FM1200-M
Pb Free Product
Package outline
TYPICAL ELECTRICAL CHARACTERISTICS
SOD-123H
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
Id, DRAIN CURRENT(A)
Id DRAIN CURRENT(A)
0.071(1.8)
0.056(1.4)
Mechanical data
•
Epoxy : UL94-V0 rated flame retardant
•
Case : Molded plastic, SOD-123H
V gs , G A T E - T O - S O U R C E V O L T A G E ( V )
,
•
Terminals :Plated terminals, solderable per MIL-STD-750
Method 2026
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
V d s , D R A I N - T O - S O U RC E V O
0.031(0.8)
( V )
L T A G E
Typ.
Figure 1. Transfer Characteristics
•
Polarity : Indicated by cathode band
•
Mounting Position : Any
•
Weight : Approximated 0.011 gram
Figure
inches and (millimeters)
Dimensions in
2. On–Region Characteristics
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
R d s ( o n ) - On - R e s i s t a n c e ( Ω)
R d s ( o n )- O n - R e s i s t a n ce ( Ω)
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
RATINGS
Marking Code
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
0.5
0.4
0.3
14
40
0.2
28
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
UNIT
V
RRM
V
RMS
V
DC
I
O
I
FSM
12
20
14
20
13
30
21
30
15
50
35
50
16
60
42
60
1.0
30
18
10
80
100
56
Id=5A
70
80
100
115
150
105
150
120
200
140
200
Volts
Volts
Volts
Amps
40
0.1
0
3
Amps
℃/W
PF
℃
℃
3.2
I d -
2)
Typical Thermal Resistance (Note
D r a i n C u rr e n t ( A )
R
ΘJA
Typical Junction Capacitance (Note 1)
Storage Temperature Range
Figure 3. On–Resistance versus Drain Current
-55 to +125
Operating Temperature Range
T
J
TSTG
C
J
3.6
3.8
3.4
V g s - G a t e - t o - S o ur c e V o l t a g e ( V )
40
4
120
-
65
to +175
-55 to +150
Figure 4. On-Resistance vs. Gate-to-Source Voltage
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
UNIT
V
F
@T A=125℃
0.50
0.70
0.5
10
0.85
0.9
0.92
Volts
mAmps
I
R
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-06
WILLAS ELECTRONIC CORP.
2012-10
WILLAS ELECTRONIC CORP.
WILLAS [ WILLAS ELECTRONIC CORP ]
