WILLAS
SOT-23 Plastic-Encapsulate MOSFETS
-20V- 200V
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS
SOD-123
•
Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
•
Low profile surface mounted application in order to
optimize board space.
•
Low power loss, high efficiency.
•
High current capability, low forward voltage drop.
•
High surge capability.
N-Channel 20-V(D-S) MOSFET
•
Guardring for overvoltage protection.
•
Ultra high-speed switching.
•
Silicon epitaxial planar chip, metal silicon junction.
APPLICATIONS
parts meet environmental standards of
•
Lead-free
MIL-STD-19500
DC/DC Converters
/228
•
RoHS product for packing code suffix "G"
Load
Halogen free product for packing code suffix "H"
Switching for Portable Applications
FM120-M
SE2312
THRU
FM1200-M
PACKAGE
Pb Free Produc
Features
Package outline
SOD-123H
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
SOT-23
0.071(1.8)
0.056(1.4)
Pb-Free package is available
Mechanical data
•
Epoxy : UL94-V0 rated flame
code
RoHS product for packing
retardant
suffix ”G”
•
Case Molded plastic,
Halogen
:
free product
SOD-123H
for packing code suffix “H”
,
•
Terminals :Plated terminals, solderable per MIL-STD-750
Method 2026
1. GATE
2. SOURCE
3. DRAIN
0.031(0.8) Typ.
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
•
Polarity : Indicated by cathode band
•
Mounting Position : Any
•
Weight : Approximated 0.011 gram
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
MARKING:
S12
Marking Code
RATINGS
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum Average Forward Rectified Current
V
RRM
V
RMS
I
O
12
20
14
13
30
21
30
14
40
28
40
15
50
35
50
16
60
42
60
1.0
Value
30
18
80
56
80
10
100
70
100
115
150
105
150
120
200
140
200
Maximum DC
20
V
DC
Maximum
Blocking Voltage
ratings (T
a
=25℃ unless otherwise noted)
Peak Forward Surge Current 8.3 ms single half sine-wave
Parameter
Drain-Source Voltage
superimposed on rated load (JEDEC method)
I
FSM
R
ΘJA
C
J
T
J
t=5s
TSTG
Symbol
V
DS
V
GS
I
D
Unit
Typical Thermal Resistance (Note 2)
20
±8.0
5
20
0.50
Gate-Source Voltage
Typical Junction Capacitance (Note 1)
Operating Temperature Range
Continuous Drain Current
-55 to +125
40
120
-55 to +150
V
-
65
to +175
Pulsed Drain Current
Storage Temperature Range
I
DM
A
0.85
Continuous Source-Drain Diode Current
CHARACTERISTICS
Maximum
Maximum
Forward Voltage at 1.0A DC
Power Dissipation
Rated DC Blocking Voltage
I
S
1.04
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
V
F
t=5s
I
R
Thermal Resistance from Junction to Ambient
@T A=125℃
Maximum Average Reverse Current at @T A=25℃
P
D
R
θJA
T
J
T
stg
0.70
0.35
357
150
0.5
10
W
0.9
℃/W
℃
0.92
Junction Temperature
Storage Temperature
applied reverse voltage of 4.0 VDC.
1- Measured at 1 MHZ and
NOTES:
-50 ~+150
2- Thermal Resistance From Junction to Ambient
2012-06
WILLAS ELECTRONIC COR
2012-10
WILLAS ELECTRONIC CORP.
WILLAS [ WILLAS ELECTRONIC CORP ]
