WILLAS
SOT-23 Plastic-Encapsulate MOSFETS
200V
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V-
SOD-123
•
Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
•
Low profile surface mounted application in order to
optimize board space.
•
Low power loss, high efficiency.
•
High current capability, low forward voltage drop.
•
High surge capability.
N-Channel 30-V(D-S) MOSFET
•
Guardring for overvoltage protection.
•
Ultra high-speed switching.
•
Silicon epitaxial planar chip, metal silicon junction.
•
Lead-free parts meet environmental standards of
FEATURE
MIL-STD-19500 /228
TrenchFET Power MOSFET
"G"
•
RoHS product for packing code suffix
Halogen free product for packing code suffix "H"
FM120-M
SE2306
THRU
FM1200-M
PACKAGE
Pb Free Produc
Features
Package outline
SOD-123H
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
SOT-23
0.071(1.8)
0.056(1.4)
Mechanical data
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
RATINGS
Marking Code
im
12
20
14
13
30
21
30
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half
S6
60Hz, resistive of inductive load.
MARKING:
wave,
For capacitive load, derate current by 20%
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
ina
V
RRM
V
RMS
V
DC
I
O
14
40
28
40
15
50
35
50
20
I
FSM
R
ΘJA
C
J
T
J
TSTG
•
Pb-Free package is available
Polarity : Indicated by cathode band
Mounting Position Any
•
RoHS product
:
for packing code suffix ”G”
•
Halogen free product for packing code suffix “H”
Weight : Approximated 0.011 gram
ry
16
60
42
60
1.0
30
•
Epoxy : UL94-V0 rated flame retardant
APPLICATIONS
•
Case : Molded plastic, SOD-123H
Load Switch for Portable Devices
,
•
Terminals :Plated terminals, solderable per MIL-STD-750
DC/DC Converter
Method 2026
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
1. GATE
2. SOURCE
3. DRAIN
0.031(0.8) Typ.
Dimensions in inches and (millimeters)
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Pr
el
18
80
56
80
10
100
70
100
115
150
105
150
120
200
140
200
Maximum Average Forward Rectified Current
Maximum
Surge Current 8.3
T
A
=25℃ unless otherwise noted)
Peak Forward
ratings (at
ms single half sine-wave
superimposed on rated load (JEDEC method)
Unit
V
Typical Thermal Resistance (Note 2)
Parameter
Typical Junction Capacitance (Note 1)
Symbol
V
GS
I
D
I
S
P
D
R
θJA
I
DM
Drain-Source voltage
Operating Temperature Range
Storage Temperature Range
Gate-Source Voltage
V
DS
to +125
-55
Value
40
30
3.16
0.62
0.75
100
-55 to150
120
-55 to +150
±20
-
65
to +175
20
0.70
Continuous Drain Current (T
J
=150℃)
a,b
Pulsed
Forward Voltage
Maximum
Drain Current
at 1.0A DC
Rated DC Blocking Voltage
Maximum Power Dissipation
a,b
CHARACTERISTICS
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
a,b
V
F
I
R
0.50
0.85
0.5
10
A
0.9
0.92
Continuous Source Current(Diode Conduction)
Maximum Average Reverse Current at @T A=25℃
@T A=125℃
W
℃/W
℃
Thermal
NOTES:
Notes :
Resistance from Junction to Ambient (t≤5s)
1- Measured at
Junction and Storage Temperature Range
Operating
1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
T
J,
T
stg
a.
Surface Mounted on 1”
×1”
FR4 board, t≤5s.
b. Pulse width limited by maximum junction temperature.
2012-06
WILLAS ELECTRONIC COR
2012-10
WILLAS ELECTRONIC CORP.
WILLAS [ WILLAS ELECTRONIC CORP ]
