WILLAS
SOT-23 Plastic-Encapsulate MOSFETS
-20V- 200V
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS
SOD-123
•
Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
•
Low profile surface mounted application in order to
optimize board space.
•
characteristics
efficiency.
Electrical
Low power loss, high
(T
a
=25℃ unless otherwise noted)
•
High current capability, low forward voltage drop.
surge capability.
•
High
Parameter
Symbol
Test condition
•
Guardring for overvoltage protection.
Static
•
Ultra high-speed switching.
silicon
•
Silicon epitaxial planar
Drain-source breakdown voltage
chip, metal
V
(BR)DSS
junction.
0V, I
D
=250µA
V
GS
=
•
Lead-free parts meet environmental standards of
Gate-source threshold voltage
V
GS
(
th)
V
DS
=V
GS
, I
D
=250µA
MIL-STD-19500 /228
•
RoHS product for packing code suffix "G"
Gate-body leakage
I
GSS
V
DS
=0V, V
GS
=±20V
Halogen free product for packing code suffix "H"
FM120-M
SE2304
THRU
FM1200-M
PACKAGE
Pb Free Produ
Features
Package outline
SOD-123H
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
Min
Typ
Max
Units
0.071(1.8)
0.056(1.4)
30
1.2
2.2
±100
1
0.049
0.031(0.8) Typ.
V
nA
µA
0.040(1.0)
0.024(0.6)
Zero gate voltage drain current
Mechanical data
Drain-source on-state resistance
a
I
DSS
V
DS
=30V, V
GS
=0V
V
GS
=10V, I
D
=3.2A
•
Epoxy : UL94-V0 rated flame retardant
R
DS(on)
•
Case : Molded plastic, SOD-123H
V
GS
=4.5V, I
D
=2.8A
,
Forward
•
Terminals :Plated
a
terminals, solderable per MIL-STD-750
I
D
=2.5A
transconductance
g
fs
V
DS
=4.5V,
Dynamic
b
Method 2026
0.060
0.075
0.061
2.5
Ω
S
0.031(0.8) Typ.
•
Polarity : Indicated by cathode band
•
Mounting Position : Any
Total gate charge
Q
g
•
Weight : Approximated 0.011 gram
Gate-source charge
Q
gs
Dimensions in inches and (millimeters)
V
DS
=15V,V
GS
=10V,I
D
=3.4A
4.5
2.1
6.7
3.2
nC
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
0.8
V
DS
=15V,V
GS
=4.5V,I
D
=3.4A
0.85
0.65
4.4
235
8.8
Ω
Gate-drain charge
Q
gd
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half
Gate resistance
wave, 60Hz, resistive of inductive load.
f =1.0MHz
R
g
For capacitive load,
Input capacitance
derate current by 20%
RATINGS
C
iss
C
oss
V
DS
=15V,V
GS
=0V,f =1MHz
12
20
14
13
30
21
30
14
40
28
40
15
50
35
50
16
60
42
60
Output capacitance
Marking Code
Maximum RMS Voltage
Turn-on delay Time
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M
45
Reverse transfer capacitance
Voltage
Maximum Recurrent Peak Reverse
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
C
rss
V
RRM
t
d(on)
V
RMS
t
r
17
12
1.0
12
30
22
40
5
120
12
18
80
56
20
80
10
100
70
100
pF
115
150
105
150
120
200
140
200
Rise time
20
V
DC
V
DD
=15V,
Turn-off delay time
Fall time
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
t
d(off)
I
O
R
L
=5.6Ω,
I
D
≈2.7A,
50
75
20
35
t
f
I
FSM
C
J
V
GEN
=4.5V,Rg=1Ω
ns
Turn-on
Thermal
time
Typical
delay
Resistance (Note 2)
Typical Junction Capacitance (Note 1)
Rise time
t
d(on)
R
ΘJA
t
r
t
d(off)
t
f
V
DD
=15V,
10
20
15
Turn-off delay time
Operating Temperature Range
Storage Temperature Range
-55 to +125
T
J
R
L
=5.6Ω,
I
D
≈2.7A,
Fall time
Drain-source body diode characteristics
Maximum Forward Voltage at 1.0A DC
CHARACTERISTICS
TSTG
V
GEN
=10V,Rg=1Ω
10
-
65
to +175
5
-55 to +150
10
0.85
0.9
0.92
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-M
V
F
I
R
0.50
0.70
0.5
10
Continuous source-drain diode current
A=25℃
I
S
Maximum Average Reverse Current at @T
Rated DC Blocking Voltage
Pulse diode forward current
T
C
=25℃
1.4
15
1.2
A
A
V
@T A=125℃
I
SM
Body diode voltage
NOTES:
2- Thermal Resistance From Junction to Ambient
V
SD
I
S
=-2.7A,V
GS
=0V
0.8
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
Notes :
a. Pulse Test : Pulse width≤300µs, duty cycle
≤2%.
b. Guaranteed by design, not subject to production testing.
2012-06
WILLAS ELECTRONIC COR
2012-
0
WILLAS ELECTRONIC CORP.
WILLAS [ WILLAS ELECTRONIC CORP ]
