SOT-23 Plastic-Encapsulate MOSFETS
200V
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V-
SOD-123
•
Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
•
Low profile surface mounted application in order to
optimize board space.
•
Low power loss, high efficiency.
•
High current capability, low forward voltage drop.
•
High surge capability.
N-Channel 20-V(D-S) MOSFET
•
Guardring for overvoltage protection.
•
Ultra high-speed switching.
FEATURE
•
Silicon epitaxial planar chip, metal silicon junction.
•
Lead-free parts
Power MOSFET
standards of
TrenchFET
meet environmental
MIL-STD-19500 /228
•
RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
WILLAS
FM120-M
SE2302
THRU
FM1200-M
Pb Free Product
PACKAGE
Features
Package outline
SOD-123H
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
SOT-23
0.071(1.8)
0.056(1.4)
1. GATE
2. SOURCE
3. DRAIN
0.031(0.8) Typ.
0.040(1.0)
0.024(0.6)
Mechanical
APPLICATIONS
data
•
Epoxy : UL94-V0 rated flame retardant
Load Switch for Portable Devices
•
Case : Molded plastic, SOD-123H
DC/DC Converter
,
•
Terminals :Plated terminals, solderable per MIL-STD-750
0.031(0.8) Typ.
Pb-Free package is available
Method 2026
RoHS product for packing
•
Polarity : Indicated by cathode band
code suffix ”G”
packing code suffix “H”
Dimensions in inches and (millimeters)
•
Mounting Position : Any
Halogen free product for
•
Weight : Approximated 0.011 gram
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
RATINGS
Marking Code
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
MARKING: S2
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
UN
V
RRM
V
RMS
V
DC
I
O
I
FSM
12
20
14
20
13
30
21
30
14
40
28
40
15
50
35
50
16
60
42
60
1.0
30
18
80
56
80
10
100
70
100
115
150
105
150
120
200
140
200
Vol
Vol
Vol
Am
a
Peak Forward Surge Current 8.3 ms single half sine-wave
Maximum ratings (T =25℃ unless otherwise noted)
R
ΘJA
C
J
T
J
TSTG
Unit
V
superimposed on rated load (JEDEC method)
Am
Parameter
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
Operating Temperature Range
Symbol
V
to
-55
DS
+125
V
GS
I
D
I
S
Drain-Source Voltage
Value
40
20
120
-55 to +150
℃/W
PF
℃
Gate-Source
Range
Storage Temperature
Voltage
-
±8
to +175
65
℃
Continuous Drain Current
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
Continuous Source-Drain Current(Diode Conduction)
V
F
A
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
UN
0.50
0.70
2.1
0.6
0.85
Power Dissipation
Maximum Average Reverse Current at @T A=25℃
I
R
Thermal Resistance
@T A=125℃
Rated DC Blocking Voltage
from Junction to Ambient
(t≤5s)
P
D
R
θJA
T
J
T
STG
0.35
0.5
357
10
150
-55 ~+150
W
0.9
0.92
Vol
℃/W
℃
mAm
NOTES:
Operating Junction
1- Measured at 1
Temperature
reverse voltage of 4.0 VDC.
Storage
MHZ and applied
2- Thermal Resistance From Junction to Ambient
2012-10
2012-06
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.
WILLAS [ WILLAS ELECTRONIC CORP ]
