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SE0504 参数 Datasheet PDF下载

SE0504图片预览
型号: SE0504
PDF下载: 下载PDF文件 查看货源
内容描述: 低电容TVS阵列 [Low Capacitance TVS Array]
分类和应用: 电视
文件页数/大小: 3 页 / 366 K
品牌: WILLAS [ WILLAS ELECTRONIC CORP ]
 浏览型号SE0504的Datasheet PDF文件第2页浏览型号SE0504的Datasheet PDF文件第3页  
WILLAS
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123
PACKAGE
Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
Low profile surface mounted application in order to
optimize board space.
Low power loss, high efficiency.
General Description
low forward voltage drop.
High current capability,
High surge capability.
surge rated diode arrays
SE0504
 
are
Guardring for overvoltage protection.
designed to protect high speed data interfaces. This
Ultra high-speed switching.
series
Silicon epitaxial planar chip, metal silicon
to protect
has been specifically designed
junction.
Lead-free parts meet environmental standards
sensitive components which are connected to
of
data
MIL-STD-19500 /228
and transmission
for packing code suffix "G"
caused by
RoHS product
lines from overvoltage
Halogen free product for packing code suffix "H"
FM120-M
SE0504
THRU
FM1200-M
Package outline
SOD-123H
Low Capacitance TVS Array
Pb Free Product
Features
Features
Diode
space
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
Array of surge rated diodes with internal TVS
Small package (2.4 x 2.2mm) saves board
Protects up to four I/O lines & power line
Low
capacitance
(<1pF)
for
high-speed
0.040(1.0)
0.024(0.6)
0.071(1.8)
0.056(1.4)
ESD (electrostatic discharge), CDE (Cable Discharge
Events), and EFT (electrical fast transients).
Epoxy : UL94-V0 rated flame retardant
The unique design incorporates surge rated, low
Case : Molded plastic, SOD-123H
capacitance steering diodes and a TVS diode in a
,
Terminals :Plated terminals, solderable per MIL-STD-750
single package. During transient conditions, the
Method 2026
steering diodes direct
by cathode band
to either the
Polarity : Indicated
the transient
Mounting Position : Any
positive side of the power supply line or to ground.
Weight : Approximated 0.011 gram
The internal TVS diode prevents over-voltage on the
Mechanical data
interfaces
No insertion loss to 2.0GHz
0.031(0.8) Typ.
Low leakage current and clamping voltage
Low operating voltage: 5.0V
0.031(0.8) Typ.
Dimensions in inches and (millimeters)
Solid-state silicon-avalanche technology
Pb-Free package is available
RoHS product for packing code suffix ”G”
Halogen free product for packing code suffix “H”
power line, protecting any downstream components.
CHARACTERISTICS
MAXIMUM RATINGS AND ELECTRICAL
The low capacitance array configuration allows the
Ratings at 25℃ ambient temperature unless otherwise specified.
 
lines. The low inductance construction minimizes
Applications
Maximum Recurrent Peak Reverse Voltage
V
RRM
V
RMS
V
DC
I
O
 
I
FSM
20
14
20
Single phase half wave, 60Hz, resistive of inductive
transmission
user to protect four high-speed data or
load.
For capacitive load, derate current by 20%
IEC61000-4-2(ESD) 15kV(air), 8kV(Contact)
IEC61000-4-4(EFT) 40A(5/50ns)
SYMBOL
RATINGS
voltage overshoot during high current surges.
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
Marking Code
12
13
14
15
16
18
10
115
120
IEC61000-4-5(Surge)24A(8/20us),Level2(Line-G
round)& Level 2(Line- Line)
21
28
35
42
30
40
50
60
1.0
 
30
30
40
50
60
80
56
80
100
70
100
150
105
150
200
140
200
USB
Voltage
Maximum RMS
2.0
Maximum DC Blocking Voltage
USB OTG
 
Maximum Average Forward Rectified Current
Monitors and Flat Panel Displays
Digital Visual Interface (DVI)
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
High-Definition Multimedia
 
 
Typical Thermal Resistance (Note 2)
Interface (HDMI)
R
ΘJA
C
J
T
J
TSTG
Typical Junction Capacitance (Note 1)
Gigabit Ethernet
 
SIM Ports
Operating Temperature Range
 
-55 to +125
40
120
 
-55 to +150
 
-
65
to +175
 
Storage
IEEE 1394
Range
Temperature
Firewire
Ports
Functional diagram
Maximum Forward Voltage at 1.0A DC
Rated DC Blocking Voltage
 
CHARACTERISTICS
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
V
F
@T A=125℃
0.50
0.70
0.5
10
0.85
0.9
0.92
 
Maximum Average Reverse Current at @T A=25℃
I
R
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
 
 
SOT23-6
2012-09
2012-06
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP