WILLAS
30mA
Surface Mount Schottky Barrier Rectifiers-40V
-20V- 200V
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS
SOD-723 Package
PACKAGE
SOD-123
•
Batch process design, excellent power dissipation offers
100
FM120-M
SCS751G
FM1200-M
THRU
Pb Free Produc
Features
Electrical characteristic curves
(Ta=25
O
C)
Ta=125℃
Package outline
SOD-123H
10
f=1MHz
0.012(0.3) Typ.
Ta=75℃
1
0.1
0.01
0.001
0
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
10
better reverse leakage current and thermal resistance.
•
Low profile surface mounted application in order to
100000
optimize board space.
•
Low power loss, high efficiency.
Ta=75℃
voltage
•
High current capability, low forward
10000
drop.
Ta=125℃
surge capability.
•
High
Ta=25℃
•
Guardring for overvoltage protection.
1000
•
Ultra high-speed switching.
Ta=-25℃
•
Silicon epitaxial planar chip, metal silicon junction.
100
•
Lead-free parts meet environmental standards of
MIL-STD-19500 /228
•
RoHS product for packing code suffix "G"
10
Halogen free product for packing code suffix "H"
0REVERSE CURRENT:IR(nA)
100 200 300 400 500 600 700 800
FORWARD CURRENT:IF(mA)
0.146(3.7)
0.130(3.3)
Ta=25℃
1
0.071(1.8)
0.056(1.4)
Ta=-25℃
Mechanical data
1
0
5
10 15 20 25 30 35
REVERSE VOLTAGE：VR(V)
VR-IR CHARACTERISTICS
40
0.1
0
5
10
REVERSE
VR-Ct CHARACTERISTICS
0.031(0.8) Typ.
0.040(1.0)
0.024(0.6)
VOLTAGE:VR(V)
15
20
25
30
Epoxy :
VOLTAGE：VF(mV)
•
FORWARD
UL94-V0 rated flame retardant
VF-IF
: Molded plastic,
•
Case
CHARACTERISTICS
SOD-123H
,
•
Terminals :Plated terminals, solderable per MIL-STD-750
330
0.031(0.8) Typ.
Method 2026
REVERSE CURRENT:IR(nA)
1000
900
800
700
600
Ta=25℃
VR=30V
n=30pcs
FORWARD VOLTAGE:VF(mV)
320
310
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
•
Polarity : Indicated by cathode band
Ta=25℃
IF=1mA
•
Mounting Position : Any
n=30pcs
•
Weight : Approximated 0.011 gram
10
Dimensions in inches and (millimeters)
9
8
7
6
5
4
3
2
AVE:1.81pF
Ta=25℃
f=1MHz
VR=0V
n=10pcs
MAXIMUM RATINGS AND
500
ELECTRICAL CHARACTERISTICS
400
300
Ratings at 25℃ ambient temperature unless otherwise specified.
300
Single phase half wave, 60Hz, resistive of inductive load.
AVE:111.0nA
For
290
capacitive load, derate current by 20%
280
Marking Code
AVE:304.2mV
RATINGS
200
100
1
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
0
0
Maximum Recurrent Peak Reverse Voltage
VF DISPERSION MAP
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
20
V
RRM
V
RMS
V
DC
30
IR DISPERSION MAP
12
20
14
13
30
21
14
40
28
40
15
50
35
50
16
60
60
42
1.0
30
40
120
Ct DISPERSION MAP
18
80
56
10
100
70
100
115
150
105
150
120
200
140
20
30
80
200
I
O
PEAK SURGE
FORWARD CURRENT:IFSM(A)
Ta=25℃
IF=0.5A
IR=1A
Irr=0.25*IR
n=10pcs
10
8
6
PEAK SURGE
FORWARD CURRENT:IFSM(A)
Peak Forward Surge Current 8.3 ms single half sine-wave
1cyc
Ifsm
25
I
FSM
superimposed on rated load (JEDEC method)
15
8.3ms
Typical Thermal Resistance (Note 2)
20
R
ΘJA
RESERVE RECOVERY TIME:trr(ns)
Ifsm
8.3ms 8.3ms
1cyc
Typical Junction Capacitance (Note 1)
10
Operating Temperature Range
C
J
15
10
T
J
TSTG
-55 to +125
4
-
65
to +175
-55 to +150
Storage Temperature Range
AVE:3.40A
5
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
Rated DC Blocking Voltage
IFSM DISRESION MAP
NOTES:
5
SYMBOL
2
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
AVE:11.7ns
V
F
I
R
0.50
0.70
0
1
0.85
0.5
10
0.9
100
0.92
0
Maximum Average Reverse Current at @T A=25℃
0
@T A=125℃
trr DISPERSION MAP
10
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-06
WILLAS ELECTRONIC CORP
2012-11
WILLAS ELECTRONIC CORP.
WILLAS [ WILLAS ELECTRONIC CORP ]
