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SCS751CS-40T5G 参数 Datasheet PDF下载

SCS751CS-40T5G图片预览
型号: SCS751CS-40T5G
PDF下载: 下载PDF文件 查看货源
内容描述: 30毫安表面贴装肖特基整流器 - 40V [30mA Surface Mount Schottky Barrier Rectifiers - 40V]
分类和应用:
文件页数/大小: 3 页 / 358 K
品牌: WILLAS [ WILLAS ELECTRONIC CORP ]
 浏览型号SCS751CS-40T5G的Datasheet PDF文件第2页浏览型号SCS751CS-40T5G的Datasheet PDF文件第3页  
SCS751CS-40T5G
30mA
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
Surface Mount Schottky Barrier Rectifiers - 40V
FM1200-M
SOD-923
SOD-123 PACKAGE
Package
Pb Free Produc
Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
WILLAS
FM120-M
THRU
Features
Package outline
SOD-123H
High current capability, low forward voltage drop.
High surge capability.
Features
for overvoltage protection.
Guardring
Ultra high-speed switching.
Extremelysmall surface mounting type. (SOD-923)
Silicon epitaxial planar chip, metal silicon junction.
Low
V
F
Lead-free parts meet environmental standards of
High reliability.
MIL-STD-19500 /228
RoHS product for packing code suffix "G"
We declare that the material of product
Halogen free product for packing code suffix
compliance with RoHS requirements.
"H"
Low power loss, high efficiency.
Low current rectification
Applications
space.
optimize board
Low profile surface mounted application in order to
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
1
0.056(1.4)
0.071(1.8)
2
Mechanical data
Pb-Free package is available
RoHS product for packing code suffix ”G”
Epoxy : UL94-V0 rated flame retardant
Construction
SOD-923
0.040(1.0)
0.024(0.6)
Halogen free product for packing code suffix “H”
Case : Molded plastic, SOD-123H
Terminals :Plated terminals, solderable per MIL-STD-750
Method 2026
,
0.031(0.8) Typ.
0.031(0.8) Typ.
Silicon epitaxial planar
Polarity : Indicated by cathode band
DEVICE MARKING AND ORDERING INFORMATION
Device
Marking
Shipping
1
Cathode
Dimensions in inches and (millimeters)
2
Anode
Mounting Position : Any
Weight : Approximated 0.011 gram
MAXIMUM
SCS751CS-40T5G
RATINGS AND ELECTRICAL CHARACTERISTICS
5
8000/Tape&Reel
 
Limits
Unit
V
RM
Reverse voltage (repetitive peak)
40
V
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH
RATINGS
V
R
Reverse voltage (DC)
30
V
Marking Code
12
13
14
15
16
Average rectified forward current
30
Io
mA
20
30
40
50
60
Maximum Recurrent Peak Reverse Voltage
V
RRM
I
FSM
Forward current surge peak
(60Hz・1cyc)
200
mA
14
21
28
35
42
Maximum RMS Voltage
V
RMS
Junction temperature
125
Tj
Maximum DC Blocking Voltage
20
30
40
50
60
V
DC
Storage temperature
-40 to +125
Tstg
Maximum Average Forward Rectified Current
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
Ratings at 25℃ ambient temperature unless otherwise specified.
Absolute maximum ratings
(Ta=25°C)
Single phase half wave, 60Hz, resistive of inductive load.
Parameter
Symbol
For capacitive load, derate current by 20%
FM180-MH FM1100-MH FM1150-MH FM1200-MH
18
80
56
80
10
100
70
100
115
150
105
150
120
200
140
200
 
Electrical characteristic
(Ta=25°C)
Parameter
I
O
 
Symbol
I
FSM
Min.
Typ.
Forward voltage
Reverse current
Typical Junction Capacitance (Note 1)
Capacitance between terminals
Operating Temperature Range
Typical Thermal Resistance (Note 2)
Storage Temperature Range
V
F
I
R
Ct
R
ΘJA
C
J
T
J
TSTG
-
-
-
Max.
 
0.37
 
0.5
Unit
V
µA
pF
1.0
 
30
Conditions
 
-55
2
to +125
-
I
F
=1mA
 
40
V
R
=30V
 
120
V
 
R
=1V , f=1MHz
to +150
-55
-
65
to +175
 
Electrical characteristic curves
(Ta=25
O
C)
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
CHARACTERISTICS
SYMBOL
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
0.1
Rated DC Blocking Voltage
0.003
V
F
@T A=125℃
AVERAGE RECTIFIDE
FORWARD CURRENT:Io(A)
0.08
0.50
0.1
VR
D=t/T
VR=20V
Tj=125℃
Io
0.70
0.5
0A
0V
0.85
10
t
T
0.9
0.92
 
I
R
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
0A
0V
t
T
Io
VR
D=t/T
VR=20V
Tj=125℃
 
REVERSE POW ER
DISSIPATION:P
R
(W)
NOTES:
0.08
0.06
0.04
0.02
Sin(θ=180)
0
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
0.06
D=1/2
2- Thermal Resistance From Junction to Ambient
0.001
DC
Sin(θ=180)
DC
0.04
0.002
DC
D=1/2
 
 
D=1/2
0.02
Sin(θ=180)
0
0
10
20
30
40
REVERSE VOLTAGE:VR(V)
VR-P
R
CHARACTERISTICS
0
0
25
50
75
100
125
AMBIENT TEMPERATURE:Ta(℃)
Derating Curve゙(Io-Ta)
0
25
50
75
100
CASE TEMPARATURE:Tc(℃)
Derating Curve(Io-Tc)
125
2012-06
WILLAS ELECTRONIC COR
2012-11
WILLAS ELECTRONIC CORP.