WILLAS
100mA
Surface Mount Schottky Barrier Rectifiers-30V
-20V- 200V
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS
SOD-723
SOD-123 PACKAGE
Package
•
Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
•
Low profile surface mounted application in order to
10000
1000
optimize board space.
power
•
Low
Ta=125℃
loss, high efficiency.
100
1000
current
•
High
Ta=75℃
capability, low forward voltage drop.
10
100
•
High surge capability.
protection.
10
•
Guardring for overvoltage
Ta=-25℃
1
•
Ultra high-speed switching.
Ta=25℃
0.1
1
•
Silicon epitaxial planar chip, metal silicon junction.
•
Lead-free parts meet environmental standards of
0.01
0.1
MIL-STD-19500 /228
RoHS
•
0.001 0
product for packing code suffix "G"
0.01
100
200
300
400
500
600
0
10
Halogen free product for packing code suffix "H"
REVERSE CURRENT:IR(uA)
FM120-M
SCS521G
FM1200-M
THRU
Pb Free Produc
Features
Package outline
Electrical characteristic curves
(Ta=25°C)
100
Ta=125℃
SOD-123H
f=1MH½
FORWARD CURRENT:IF(mA)
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
0.146(3.7)
0.130(3.3)
Ta=75℃
Ta=25℃
0.012(0.3) Typ.
10
0.071(1.8)
0.056(1.4)
Ta=-25℃
1
20
30
0
5
10
15
20
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
0.040(1.0)
0.024(0.6)
Mechanical data
FORWARD VOLTAGE:VF(mV)
VF-IF CHARACTERISTICS
REVERSE VOLTAGE:VR(V)
VR-IR CHARACTERISTICS
FORWARD VOLTAGE:VF(mV)
Method 2026
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
290
REVERSE CURRENT:IR(uA)
•
Epoxy : UL94-V0 rated flame retardant
30
Case
•
300
: Molded plastic, SOD-123H
Ta=25℃
,
IF=10mA
•
Terminals :Plated terminals, solderable
25
MIL-STD-750
per
n=30pcs
20
15
10
5
0
AVE:2.017uA
Ta=25℃
VR=10V
n=30pcs
0.031(0.8) Typ.
20
19
18
17
Ta=25℃
f=1MHz
VR=0V
n=10pcs
0.031(0.8) Typ.
•
280
Polarity : Indicated by cathode band
Mounting Position : Any
•
270
•
Weight : Approximated 0.011 gram
260
250
16
Dimensions in inches and (millimeters)
15
14
13
12
AVE:17.34pF
10
11
AVE:270.2mV
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
VF DISPERSION MAP
IR DISPERSION MAP
For capacitive load, derate current by 20%
RATINGS
Marking Code
PEAK SURGE
FORWARD CURRENT:IFSM(A)
PEAK SURGE
FORWARD CURRENT:IFSM(A)
1cyc
Ifsm
Maximum Recurrent Peak Reverse Voltage
20
10
Ct DISPERSION MAP
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
PEAK SURGE
FORWARD CURRENT:IFSM(A)
V
RRM
V
RMS
5
12
20
Ifsm
14
20
13
30
8.3ms 8.3ms
21
1cyc
14
40
28
40
10
15
50
16
60
42
60
1.0
30
1
18
80
Ifsm
56
80
t
10
100
70
100
115
150
105
150
120
200
140
200
Maximum RMS Voltage
Maximum DC Blocking Voltage
10
15
8.3ms
35
5
V
DC
I
O
I
FSM
30
50
Maximum Average Forward Rectified Current
AVE:3.90A
5
Peak Forward Surge Current 8.3 ms single half sine-wave
10
superimposed on rated load (JEDEC method)
0
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
IFSM DISRESION MAP
Operating Temperature Range
0
ΘJA
R
1
C
J
10
0
100
T
J
TSTG
0.1
NUMBER OF CYCLES
-55 to +125
IFSM-CYCLE CHARACTERISTICS
0.1
TIME:t(ms)
-55 to
IFSM-t CHARACTERISTICS
40
120
100
+150
Storage Temperature Range
-
65
to +175
TRANSIENT
THAERMAL IMPEDANCE:Rth (℃/W)
1000
CHARACTERISTICS
Rth(j-a)
FORWARD POWER
DISSIPATION:Pf(W)
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
REVERSE POWER
DISSIPATION:P
R
(W)
0.08
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
100
Mounted on epoxy board
IM=10mA
IF=100mA
V
F
I
R
D=1/2
0.50
DC
Sin(θ=180)
0.08
0.06
0.04
0.02
0
0.70
0.5
10
0.85
0.9
0.92
Rth(j-c)
@T A=125℃
0.06
0.04
0.02
0
NOTES:
D=1/2
DC
Sin(θ=180)
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
1ms time
2- Thermal Resistance From Junction to Ambient
300us
10
0.001
10
TIME:t(s)
Rth-t CHARACTERISTICS
0.1
1000
0
0.1
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
Io-Pf CHARACTERISTICS
0.2
0
10
20
30
REVERSE VOLTAGE:VR(V)
VR-P
R
CHARACTERISTICS
2012-06
WILLAS ELECTRONIC CORP
2012-11
WILLAS ELECTRONIC CORP.