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SCS521G 参数 Datasheet PDF下载

SCS521G图片预览
型号: SCS521G
PDF下载: 下载PDF文件 查看货源
内容描述: 百毫安表面贴装肖特基整流器-30V [100mA Surface Mount Schottky Barrier Rectifiers-30V]
分类和应用:
文件页数/大小: 3 页 / 411 K
品牌: WILLAS [ WILLAS ELECTRONIC CORP ]
 浏览型号SCS521G的Datasheet PDF文件第1页浏览型号SCS521G的Datasheet PDF文件第3页  
WILLAS
100mA
Surface Mount Schottky Barrier Rectifiers-30V
-20V- 200V
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS
SOD-723
SOD-123 PACKAGE
Package
Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
Low profile surface mounted application in order to
10000
1000
optimize board space.
power
Low
Ta=125℃
loss, high efficiency.
100
1000
current
High
Ta=75℃
capability, low forward voltage drop.
10
100
High surge capability.
protection.
10
Guardring for overvoltage
Ta=-25℃
1
Ultra high-speed switching.
Ta=25℃
0.1
1
Silicon epitaxial planar chip, metal silicon junction.
Lead-free parts meet environmental standards of
0.01
0.1
MIL-STD-19500 /228
RoHS
0.001 0
product for packing code suffix "G"
0.01
100
200
300
400
500
600
0
10
Halogen free product for packing code suffix "H"
REVERSE CURRENT:IR(uA)
FM120-M
SCS521G
FM1200-M
THRU
Pb Free Produc
Features
Package outline
Electrical characteristic curves
(Ta=25°C)
100
Ta=125℃
SOD-123H
f=1MH½
FORWARD CURRENT:IF(mA)
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
0.146(3.7)
0.130(3.3)
Ta=75℃
Ta=25℃
0.012(0.3) Typ.
10
0.071(1.8)
0.056(1.4)
Ta=-25℃
1
20
30
0
5
10
15
20
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
0.040(1.0)
0.024(0.6)
Mechanical data
FORWARD VOLTAGE:VF(mV)
VF-IF CHARACTERISTICS
REVERSE VOLTAGE:VR(V)
VR-IR CHARACTERISTICS
FORWARD VOLTAGE:VF(mV)
Method 2026
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
290
REVERSE CURRENT:IR(uA)
Epoxy : UL94-V0 rated flame retardant
30
Case
300
: Molded plastic, SOD-123H
Ta=25℃
,
IF=10mA
Terminals :Plated terminals, solderable
25
MIL-STD-750
per
n=30pcs
20
15
10
5
0
AVE:2.017uA
Ta=25℃
VR=10V
n=30pcs
0.031(0.8) Typ.
20
19
18
17
Ta=25℃
f=1MHz
VR=0V
n=10pcs
0.031(0.8) Typ.
280
Polarity : Indicated by cathode band
Mounting Position : Any
270
Weight : Approximated 0.011 gram
260
250
16
Dimensions in inches and (millimeters)
15
14
13
12
AVE:17.34pF
10
11
AVE:270.2mV
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
 
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
VF DISPERSION MAP
IR DISPERSION MAP
For capacitive load, derate current by 20%
RATINGS
Marking Code
PEAK SURGE
FORWARD CURRENT:IFSM(A)
PEAK SURGE
FORWARD CURRENT:IFSM(A)
1cyc
Ifsm
Maximum Recurrent Peak Reverse Voltage
20
10
Ct DISPERSION MAP
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
PEAK SURGE
FORWARD CURRENT:IFSM(A)
V
RRM
V
RMS
5
12
20
Ifsm
14
20
13
30
8.3ms 8.3ms
21
1cyc
14
40
28
40
10
15
50
16
60
42
60
1.0
 
30
1
18
80
Ifsm
56
80
t
10
100
70
100
115
150
105
150
120
200
140
200
Maximum RMS Voltage
Maximum DC Blocking Voltage
10
15
8.3ms
35
5
V
DC
I
O
 
I
FSM
30
50
Maximum Average Forward Rectified Current
AVE:3.90A
 
5
Peak Forward Surge Current 8.3 ms single half sine-wave
 
 
10
superimposed on rated load (JEDEC method)
0
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
IFSM DISRESION MAP
Operating Temperature Range
0
ΘJA
R
1
C
J
 
10
0
100
 
T
J
TSTG
0.1
NUMBER OF CYCLES
-55 to +125
IFSM-CYCLE CHARACTERISTICS
 
0.1
TIME:t(ms)
-55 to
IFSM-t CHARACTERISTICS
40
120
 
100
+150
Storage Temperature Range
-
65
to +175
 
TRANSIENT
THAERMAL IMPEDANCE:Rth (℃/W)
1000
CHARACTERISTICS
Rth(j-a)
FORWARD POWER
DISSIPATION:Pf(W)
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
REVERSE POWER
DISSIPATION:P
R
(W)
0.08
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
 
100
Mounted on epoxy board
IM=10mA
IF=100mA
V
F
I
R
D=1/2
0.50
DC
Sin(θ=180)
0.08
0.06
0.04
0.02
0
0.70
0.5
10
0.85
0.9
0.92
 
Rth(j-c)
@T A=125℃
0.06
0.04
0.02
0
NOTES:
D=1/2
DC
Sin(θ=180)
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
 
 
1ms time
2- Thermal Resistance From Junction to Ambient
300us
10
0.001
10
TIME:t(s)
Rth-t CHARACTERISTICS
0.1
1000
0
0.1
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
Io-Pf CHARACTERISTICS
0.2
0
10
20
30
REVERSE VOLTAGE:VR(V)
VR-P
R
CHARACTERISTICS
2012-06
WILLAS ELECTRONIC CORP
2012-11
WILLAS ELECTRONIC CORP.