WILLAS
100mA
Surface Mount Schottky Barrier Rectifiers-30V
-20V- 200V
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS
SOD-723 Package
PACKAGE
SOD-123
•
Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
•
Low profile surface mounted application in order to
optimize board space.
•
Low power loss, high efficiency.
•
High current capability, low forward voltage drop.
High surge capability.
•
Applications
•
Guardring
rectification
Low current
for overvoltage protection.
•
Ultra high-speed switching.
•
Silicon epitaxial planar chip, metal silicon junction.
Lead-free
•
Features
parts meet environmental standards of
1)
MIL-STD-19500 /228
Ultra Small mold type.
•
RoHS product for packing code suffix "G"
2) Low I
R
.
Halogen free product for packing code suffix "H"
FM120-M
SCS520G
FM1200-M
Pb Free Product
THRU
Features
Package outline
SOD-123H
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
3) High reliability.
Mechanical
data
0.040(1.0)
0.024(0.6)
•
Epoxy : UL94-V0 rated flame retardant
RoHS
Molded
for packing code
•
Case :
product
plastic, SOD-123H
suffix "G"
Halogen free product for packing code suffix "H"
,
•
Terminals :Plated terminals, solderable per MIL-STD-750
Construction
Method 2026
Silicon epitaxial planar
cathode band
epit
•
Polarity : Indicated by
•
Mounting Position : Any
•
Weight : Approximated 0.011 gram
D evice M ark ing
Ratings at 25℃ ambient temperature unless otherwise specified.
E
SCS520G
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
RATINGS
Marking Code
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
SOD-723
0.031(0.8) Typ.
0.031(0.8) Typ.
Dimensions in inches and (millimeters)
MAXIMUM RATINGS
Marking
AND ELECTRICAL CHARACTERISTICS
Device
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
U
Parameter
V
RRM
V
DC
12
20
13
30
21
14
40
15
50
16
60
18
80
56
80
10
100
70
100
115
150
105
150
120
200
140
200
V
Symbol
14
V
RMS
Maximum
Reverse voltage(DC)
DC Blocking Voltage
Average rectified forward current
Maximum Average Forward Rectified Current
I
O
Forward current surge peak
（60Hz・1cyc）
Junction temperature
Peak Forward Surge Current 8.3 ms single half sine-wave
I
FSM
Storage temperature
superimposed on rated load (JEDEC method)
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
Operating
Electrical characteristics
(Ta=25°C)
Temperature Range
V
R
20
Io
I
FSM
Tj
Tstg
Limits
28
35
30
30
40
50
100
500
125
-40 to +125
Unit
42
60
V
V
mA
1.0
mA
℃
30
℃
40
120
V
A
A
R
ΘJA
C
J
Sym bol
V
F
I
R
-55 to +125
Typ.
-
Max.
Unit
V
I
F
=10m A
R
-55 to +150
℃
Param eter
Storage Temperature Range
T
J
Min.
TSTG
-
-
65
to +175
Conditions
Forward voltage
CHARACTERISTICS
Revers e current
Maximum Forward Voltage at 1.0A DC
Rated DC Blocking Voltage
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
U
-
-
µA
0.5
V =10V
0.45
V
F
I
R
0.50
0.70
0.85
0.9
0.92
V
Maximum Average Reverse Current at @T A=25℃
@T A=125℃
0.5
10
m
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-06
WILLAS ELECTRONIC CORP
2012-11
WILLAS ELECTRONIC CORP.
WILLAS [ WILLAS ELECTRONIC CORP ]
