SOT-89
SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
Plastic-Encapsulate Transistors
1.0A
SOD-123
•
Batch process design, excellent power dissipation offers
WILLAS
FM120-M
PXT2222A
THRU
FM1200-M
PACKAGE
Pb Free Produ
Features
Package outline
SOD-123H
SOT-89
TRANSISTOR (NPN)
surface mounted application in order to
•
Low profile
optimize board space.
FEATURES
Low power loss, high efficiency.
•
Epitaxial
High current capability, low forward voltage drop.
•
planar die construction
•
Pb-Free
High surge capability.
package is available
•
Guardring for overvoltage protection.
RoHS product for packing code suffix ”G”
•
Ultra high-speed switching.
•
free
epitaxial
for packing code suffix “H”
Halogen
Silicon
product
planar chip, metal silicon junction.
•
Lead-free parts meet environmental standards of
MAXIMUM
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
stg
MIL-STD-19500 /228
RATINGS (T
for packing code suffix "G"
•
RoHS product
a
=25
℃
unless otherwise
Halogen free product for packing code suffix "H"
better reverse leakage current and thermal resistance.
1.
BASE
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
2.
COLLECTOR
0.071(1.8)
0.056(1.4)
3.
EMITTER
noted)
Unit
0.031(0.8) Typ.
0.040(1.0)
0.024(0.6)
Parameter
Mechanical data
Value
•
Epoxy : UL94-V0 rated flame retardant
75
Collector-Base Voltage
V
•
Case : Molded plastic, SOD-123H
Collector-Emitter Voltage
40
V
,
•
Terminals :Plated terminals, solderable per MIL-STD-750
Emitter-Base Voltage
6
V
Method 2026
Collector
:
Current -Continuous
600
mA
•
Polarity Indicated by cathode band
0.031(0.8) Typ.
Dimensions in inches and (millimeters)
Collector Power Dissipation
•
Mounting Position : Any
Junction
:
Temperature
0.011 gram
•
Weight Approximated
0.5
150
W
℃
Storage Temperature
-55
~150
℃
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
ELECTRICAL CHARACTERISTICS (T
a
inductive
unless otherwise specified)
Single phase half wave, 60Hz, resistive of
=25℃
load.
Collector-base breakdown voltage
RATINGS
Marking Code
Collector-emitter breakdown voltage
Parameter
For capacitive load, derate current by 20%
Symbol
V
(BR)CEO
V
(BR)EBO
Test conditions
Min
15
50
35
50
Max
18
80
56
10
100
70
Unit
V
V
μA
115
150
105
120
200
140
200
I
C
= 10μ
FM130-MH
75
V
(BR)CBO
SYMBOL
FM120-M
H
A,I
E
=0
FM140-MH FM150-MH FM160-MH
V
RRM
V
RMS
12
I
C
= 10mA,
13
=0
I
B
20
14
30
21
14
40
28
40
V
FM180-MH FM1100-MH FM1150-MH FM1200-
Emitter-base breakdown voltage
Collector cut-off
Blocking Voltage
Maximum DC
current
Maximum RMS Voltage
Maximum Recurrent Peak Reverse Voltage
40
16
6
I
E
=10μA, I
C
=0
V
CB
=60V,
30
E
=0
I
20
V
EB
= 5V , I
C
=0
60
42
60
1.0
30
40
120
I
CBO
DC
V
I
EBO
I
O
h
FE(2)
I
FSM
0. 01
80
0. 01
100
μA
150
Emitter cut-off current
Maximum Average Forward Rectified Current
h
Peak Forward Surge Current 8.3 ms single half sine-wave
FE(1)
superimposed on rated load (JEDEC method)
V
CE
=10V, I
C
= 0.1mA
V
CE
=10V, I
C
= 1mA
V
CE
=10V, I
C
= 10mA
35
50
75
100
40
DC current
Junction Capacitance (Note 1)
Typical
gain
Operating Temperature Range
Storage Temperature Range
Typical Thermal Resistance (Note 2)
R
ΘJA
h
FE(3)
h
FE(4)
J
T
h
FE(6)
C
J
300
-55 to +150
V
CE
=10V, I
to +125
-55
C
= 150mA
V
CE
=1V, I
C
= 150mA
V
CE
=10V, I
C
= 500mA
I
C
=500mA, I
B
=
0.50
50mA
I
C
=150mA, I
B
=15mA
I
C
=500mA, I
B
=50mA
I
C
=150mA, I
B
=15mA
V
CE
=10V, I
C
=20mA
f=100MHz
V
CB
=10V, I
E
= 0,f=1MHz
V
CC
=30V, I
C
=150mA
V
BE(off)
=0.5V,I
B1
=15mA
V
CC
=30V, I
C
=150mA
I
B1
=- I
B2
= 15mA
h
FE(5)
TSTG
50
-
65
to +175
CHARACTERISTICS
Collector-emitter saturation voltage
Rated DC Blocking Voltage
Base-emitter saturation voltage
Maximum Forward Voltage at 1.0A DC
V
CE(sat)
V
F
I
R
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-M
0.70
0.5
10
Maximum Average Reverse Current at @T A=25℃
V
CE(sat)
@T A=125℃
1
0.85
0.3
2.0
1.2
V
0.9
V
V
V
0.92
V
BE(sat)
V
BE(sat)
f
T
C
ob
t
d
t
r
t
S
t
f
NOTES:
0.6
300
Transition frequency
From Junction to Ambient
2- Thermal Resistance
Output Capacitance
Delay time
Rise time
Storage time
Fall time
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
MHz
8
10
25
225
pF
ns
ns
ns
2012-06
60
ns
WILLAS ELECTRONIC COR
2012-
0
WILLAS ELECTRONIC CORP.
WILLAS [ WILLAS ELECTRONIC CORP ]
