FM120-M
MSEMF3V3LCC
THRU
Low Capacitance Quad Array for ESD Protection
FM1200-M
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123
PACKAGE
WILLAS
Pb Free Product
Features
Electrical Parameter
optimize board space.
Package outline
SOD-123H
•
Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
application
•
Low profile surface mounted
Parameter
in order to
Symbol
Maximum Reverse
Low
•
I
PP
power loss, high efficiency.
Peak Pulse Current
•
High current capability, low forward voltage drop.
Clamping
High
•
V
C
surge capability.
Voltage @ I
PP
for overvoltage
Reverse
•
Guardring
Working Peak
protection.
Voltage
V
RWM
•
Ultra high-speed switching.
Maximum Reverse Leakage Current @
I
R
•
Silicon epitaxial planar chip, metal silicon junction.
V
RWM
•
Lead-free parts meet environmental standards of
I
T
Test
/228
MIL-STD-19500
Current
RoHS product for packing code suffix "G"
•
V
BR
Breakdown Voltage @ I
T
Halogen free product for packing code suffix "H"
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
Mechanical data
I
F
Forward Current
Epoxy : UL94-V0 rated flame retardant
•
V
Forward Voltage @ I
F
F
•
Case : Molded plastic, SOD-123H
,
•
Terminals :Plated terminals, solderable per MIL-STD-750
Method 2026
Electrical Characteristics
0.031(0.8) Typ.
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
•
Polarity : Indicated by cathode band
V
BR
•
Mounting Position : Any
•
Numbers
Part
Weight : Approximated 0.011 gram
Min.
Typ.
Dimensions in inches and (millimeters)
C
Max.
I
T
V
RWM
I
R
µA
1.0
Typ. 0v
bias
pF
12
1.
Ratings at 25℃ ambient temperature unless otherwise specified.
MSEMF3V3LCC
5.3
5.6
Single phase half wave, 60Hz, resistive of inductive load.
5.9
For capacitive load, derate current by 20%
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
V
V
V
mA
V
1
3.0
Non-repetitive current per Figure 1.
Marking Code
2.
SYMBOL
FM120-M
Only 1 diode
RATINGS
under power. For 4 diodes under power
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
U
3.
Capacitance of one diode at
Maximum Recurrent Peak Reverse Voltage
f=1MHz,T
RRM
V
A
=25℃
20
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
12
14
13
30
21
30
14
40
28
40
15
50
35
50
16
60
42
60
1.0
30
18
80
56
80
10
100
70
100
115
150
105
150
120
200
140
200
V
V
RMS
V
DC
I
O
I
FSM
R
ΘJA
C
J
T
J
TSTG
V
20
V
A
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
Typical Characteristics
A
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
Operating Temperature Range
Storage Temperature Range
-55 to +125
40
120
-55 to +150
℃
-
65
to +175
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
U
V
F
@T A=125℃
0.50
0.70
0.5
10
0.85
0.9
0.92
V
I
R
m
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
Figure 1 Pulse Width
Figure 2 Power Derating Curve
2012-09
2012-06
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP
WILLAS [ WILLAS ELECTRONIC CORP ]
