FM120-M
THRU
MMBTA9xLT1
FM1200-M
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
High Voltage Transistor
SOD-123
•
Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
WILLAS
PACKAGE
Pb Free Product
Features
Package outline
SOD-123H
•
Low profile surface mounted application in order to
optimize board space.
•
Low power loss, high efficiency.
•
High current capability, low forward voltage drop.
FEATURE
•
High surge capability.
High voltage.
•
Guardring for overvoltage protection.
For Telephony or Professional communication equipment applications.
•
Ultra high-speed switching.
epitaxial planar
packing code suffix "G"
•
Silicon
RoHS product for
chip, metal silicon junction.
Halogen free product for packing code suffix
of
•
Lead-free parts meet environmental standards
"H"
MIL-STD-19500 /228
PNP Silicon
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
•
RoHS product for packing code suffix "G"
INFORMATION
DEVICE MARKING AND ORDERING
Mechanical data
Halogen free product for packing code suffix "H"
Device
Marking
Shipping
0.040(1.0)
SOT–23
0.024(0.6)
MMBTA92LT1
2D
3000/Tape&Reel
•
Epoxy : UL94-V0 rated flame retardant
•
Case : Molded plastic, SOD-123H
MMBTA93LT1
2E
3000/Tape&Reel
,
•
Terminals :Plated terminals, solderable per MIL-STD-750
0.031(0.8) Typ.
0.031(0.8) Typ.
Method 2026
•
Polarity : Indicated by cathode band
•
Mounting Position : Any
MAXIMUM RATINGS
•
Weight : Approximated 0.011 gram
Rating
3
Dimensions in inches and (millimeters)
COLLECTOR
Value
Symbol
MMBTA92 MMBTA93
Unit
1
BASE
MAXIMUM RATINGS AND
CEO
ELECTRICAL
–200 Vdc
CHARACTERISTICS
–300
Collector–Emitter Voltage
V
Ratings at 25℃ ambient temperature unless otherwise specified.
Collector–Base Voltage
V
CBO
–300
–200
Vdc
Single phase half wave, 60Hz, resistive of inductive load.
V
EBO
–5.0
Vdc
For capacitive
Emitter–Base
current by 20%
load, derate
Voltage
Collector Current — Continuous
RATINGS
Marking Code
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
2
EMITTER
–500
mAdc
I
C
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
UNIT
V
RRM
12
13
20
30
Symbol
14
21
P
D
20
30
14
40
Max
28
225
40
15
50
35
50
16
60
42
60
1.0
30
40
120
18
80
56
80
10
100
70
100
115
150
105
150
120
200
140
200
THERMAL CHARACTERISTICS
Characteristic
V
RMS
Total Device Dissipation FR– 5 Board, (1)
Maximum DC Blocking Voltage
V
DC
T
A
= 25°C
Maximum Average Forward Rectified Current
I
O
Derate above 25°C
Thermal Resistance, Junction to Ambient
Peak Forward Surge Current 8.3 ms single half sine-wave
I
FSM
Total
load (JEDEC method)
superimposed on rated
Device Dissipation
Typical Thermal Resistance (Note 2)
Unit
mW
Volts
Volts
Volts
1.8
R
θJA
P
D
556
300
mW/°C
°C/W
mW
mW/°C
°C/W
Amp
Amp
C
J
Thermal Resistance, Junction to Ambient
Operating Temperature Range
T
J
Junction and Storage Temperature
Storage Temperature Range
TSTG
Typical Junction Capacitance (Note 1)
Alumina Substrate, (2) T
A
= 25°C
Derate above 25°C
R
ΘJA
T
J
, T
stg
2.4
–55 to +150
-55 to +150
℃/W
PF
℃
℃
R
θJA
to +125
417
-55
°C
-
65
to +175
1. FR–5 = 1.0 x 0.75 x 0.062 in.
CHARACTERISTICS
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5%
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
UNIT
alumina.
Volts
0.9
Maximum Forward Voltage at 1.0A
Width < 300
µs,
Duty
V
F
DC
0.92
0.50
0.70
0.85
3. Pulse Test: Pulse
Cycle < 2.0%.
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
@T A=125℃
I
R
0.5
10
mAmp
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-06
2012-11
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.
WILLAS [ WILLAS ELECTRONIC CORP ]
