FM120-M
THRU
MMBTA5xLT1
Driver Transistors
FM1200-M
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123
•
Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
WILLAS
PACKAGE
Pb Free Product
Features
Package outline
SOD-123H
•
Low profile surface mounted application in order to
optimize board space.
PNP Silicon
•
Low power loss, high efficiency.
We declare that the material
voltage drop.
•
High current capability, low forward
of product
•
High surge capability.
RoHS requirements.
compliance with
•
Guardring for overvoltage
available
Pb-Free package is
protection.
•
Ultra high-speed switching.
code suffix ”G”
RoHS product for packing
•
Silicon epitaxial planar chip, metal silicon junction.
Halogen free product for packing code suffix
•
Lead-free parts meet environmental standards of
“H”
•
RoHS product for packing code suffix "G"
MAXIMUM RATINGS
MIL-STD-19500 /228
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
Halogen free product for packing code suffix "H"
Value
Rating
Symbol
MMBTA55 MMBTA56
Mechanical data
Collector–Emitter Voltage
V
CEO
Epoxy : UL94-V0 rated flame retardant
–60
–80
Unit
Vdc
ina
Symbol
Max
Unit
•
•
Mounting Position : Any
THERMAL CHARACTERISTICS
•
Weight : Approximated 0.011 gram
Characteristic
Method 2026
Collector Current — Continuous
I
C
Polarity : Indicated by cathode band
–500
mAdc
ry
1
BASE
•
Collector–Base Voltage
V
–60
–80
Vdc
•
Case : Molded plastic, SOD-123H
CBO
,
•
Terminals :Plated terminals, solderable per MIL-STD-750
Vdc
–4.0
Emitter–Base Voltage
V
EBO
SOT–23
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
3
COLLECTOR
Typ.
0.031(0.8)
Dimensions in inches and (millimeters)
2
EMITTER
Total
MAXIMUM RATINGS AND ELECTRICAL
Device Dissipation FR– 5 Board, (1)
P
D
CHARACTERISTICS
225
mW
Pr
el
I
O
T
A
=
ambient temperature unless otherwise specified.
Ratings at 25℃
25°C
Derate above 25°C
1.8
mW/°C
Single phase half wave, 60Hz, resistive of inductive load.
Thermal
derate current by 20%
R
θJA
556
°C/W
For capacitive load,
Resistance, Junction to Ambient
Total Device Dissipation
P
D
300
mW
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
UNIT
RATINGS
Alumina Substrate, (2) T
A
= 25°C
Marking Code
12
13
14
15
16
18
10
115
120
Derate above 25°C
2.4
mW/°C
20
30
40
50
60
80
100
150
200
Maximum Recurrent Peak Reverse Voltage
Volts
V
RRM
Thermal Resistance, Junction to Ambient
R
θJA
417
°C/W
Volts
14
21
28
35
42
56
70
105
140
Maximum RMS Voltage
V
RMS
Junction and Storage Temperature
T
J
, T
stg
–55 to +150
°C
Volts
Maximum DC Blocking Voltage
20
30
40
50
60
80
100
150
200
V
DC
im
Maximum Average Forward Rectified Current
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
DEVICE MARKING
I
MMBTA55LT1
= 2H ;
MMBTA56
LT1 = 2GM
FSM
C
J
T
J
1.0
30
40
120
Max
Amp
Unit
-55 to +150
Amp
ELECTRICAL CHARACTERISTICS
(T
A
=
ΘJA
unless otherwise noted.)
Typical Thermal Resistance (Note 2)
R
25°C
Typical Junction Capacitance (Note 1)
Operating Temperature Range
Characteristic
Symbol
-55 to +125
Min
℃/W
PF
℃
℃
Storage
OFF CHARACTERISTICS
Temperature Range
TSTG
-
65
to +175
Collector–Emitter Breakdown Voltage (3)
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
(I
C
= –1.0 mAdc, I
B
= 0 )
CHARACTERISTICS
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
UNIT
V
(BR)CEO
Vdc
V
F
@T A=125℃
MMBTA55
MMBTA56
0.50
–60
0.70
–80
–4.0
—
Emitter–Base Breakdown Voltage
I
R
—
—
0.5
0.85
0.9
0.92
Volts
(I
E
= –100
µAdc,
I
C
= 0 )
NOTES:
Collector Cutoff Current
1- Measured at
V
CE
= –60Vdc, I
B
reverse voltage of 4.0 VDC.
(
1 MHZ and applied
= 0)
2- Thermal Resistance From Junction to Ambient
Collector Cutoff Current
( V
CB
= –60Vdc, I
E
= 0)
( V
CB
= –80Vdc, I
E
= 0)
MMBTA55
MMBTA56
V
(BR)EBO
10
—
mAmp
Vdc
µAdc
µAdc
I
CEO
I
CBO
–0.1
—
—
–0.1
–0.1
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
3. Pulse Test: Pulse Width <300
µs,
Duty Cycle <2.0%.
2012-06
2012-11
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.
WILLAS [ WILLAS ELECTRONIC CORP ]
