FM120-M
THRU
MMBTA4xLT1
FM1200-M
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
High Voltage Transistors
SOD-123
PACKAGE
•
Batch process design, excellent power dissipation offers
WILLAS
Pb Free Product
Features
Package outline
SOD-123H
RoHS product for packing code
order
"G"
•
Low profile surface mounted application in
suffix
to
optimize board space.
Halogen free product for packing code suffix "H"
.
•
Low power loss, high efficiency.
•
High current capability, low forward voltage drop.
High surge capability.
•
DEVICE MARKING AND ORDERING INFORMATION
•
Guardring for overvoltage protection.
Package
Device
Marking
Shipping
•
Ultra high-speed switching.
MMBTA42LT1
1D
SOT-23
•
Silicon epitaxial planar chip, metal silicon junction.
3000/Tape&Reel
•
Lead-free parts meet environmental standards of
•
RoHS product for packing code suffix "G"
MIL-STD-19500 /228
MMBTA43LT1
M1E
SOT-23
3000/Tape&Reel
better reverse leakage current and thermal resistance.
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
Mechanical data
Halogen free product for
MAXIMUM RATINGS
packing code suffix "H"
Rating
Symbol
Epoxy : UL94-V0 rated flame retardant
Value
MMBTA42 MMBTA43
SOT–23
0.040(1.0)
0.024(0.6)
3
0.031(0.8) Typ.
Unit
•
Collector–Emitter Voltage
300
200
Vdc
•
Case : Molded plastic, SOD-123H
V
CEO
,
•
Terminals :Plated
Voltage
Collector–Base
terminals, solderable per MIL-STD-750
V
CBO
300
200
Vdc
COLLECTOR
0.031(0.8) Typ.
•
•
•
THERMAL CHARACTERISTICS
Weight : Approximated 0.011 gram
Characteristic
Method 2026
Emitter–Base Voltage
V
EBO
Polarity : Indicated by cathode band
Collector Current — Continuous
I
C
Mounting Position : Any
6.0
500
6.0
Vdc
mAdc
1
BASE
Dimensions in inches and (millimeters)
2
EMITTER
Symbol
Max
Unit
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Total Device
temperature unless otherwise
Ratings at 25℃ ambient
Dissipation FR– 5 Board, (1)
specified.
P
D
225
mW
T
half
25°C
60Hz, resistive of inductive load.
A
=
Single phase
wave,
Derate above 25°C
by 20%
1.8
mW/°C
For capacitive load, derate current
Thermal Resistance, Junction to Ambient
R
θJA
556
°C/W
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
UNIT
RATINGS
Total Device Dissipation
300
Marking Code
12
P
D
13
14
15
mW
16
18
10
115
120
Alumina Substrate, (2) T
A
= 25°C
20
30
40
50
60
80
100
150
200
Maximum Recurrent Peak Reverse Voltage
Volts
V
RRM
Derate above 25°C
2.4
mW/°C
Volts
14
θJA
21
28
35
56
70
105
140
Maximum RMS Voltage
Resistance, Junction to Ambient
V
RMS
Thermal
R
417
°C/W
42
Volts
Maximum DC
Junction
Voltage
Blocking
and Storage Temperature
20
40
60
80
100
150
200
V
DC
T
J
, T
stg
30
–55 to +150
50
°C
Maximum Average Forward Rectified Current
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted.)
Characteristic
I
FSM
R
ΘJA
T
J
MMBTA42
TSTG
MMBTA43
I
O
Symbol
Min
1.0
Max
30
40
120
Amps
Unit
Amps
OFF
Resistance (Note 2)
Typical Thermal
CHARACTERISTICS
Operating Temperature
mAdc, I
B
= 0)
(I
C
= 1.0
Range
Storage Temperature Range
V
(BR)CEO
-55 to +125
V
300
200
Vdc
Typical Junction Capacitance (Note 1)
Collector–Emitter Breakdown Voltage(3)
C
J
-55 to +150
℃/W
PF
℃
℃
—
-
65
—
to +175
Vdc
CHARACTERISTICS
(I
C
= 100
µAdc,
I
E
= 0)
Maximum Forward Voltage at 1.0A DC
Rated DC Blocking
100
µAdc,
I
C
= 0)
(I
E
=
Voltage
NOTES:
Collector–Base Breakdown Voltage
V
F
MMBTA43
I
R
(BR)CBO
SYMBOL
MMBTA42
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
UNIT
300
—
0.50
Maximum Average Reverse Current at @T A=25℃
Emitter–Base Breakdown Voltage
200
6.0
0.70
—
0.85
0.9
0.92
Volts
0.5
@T A=125℃
V
(BR)EBO
—
10
0.1
0.1
Vdc
µAdc
mAmp
Collector Cutoff Current
(V
= 200Vdc, I = 0)
MMBTA42
MMBTA43
( V
CB
= 160Vdc, I
E
= 0)
Emitter Cutoff Current
( V
EB
= 6.0Vdc, I
C
= 0)
( V
EB
= 4.0Vdc, I
C
= 0)
I
CBO
—
—
I
EBO
MMBTA42
MMBTA43
—
—
0.1
0.1
CB
E
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
µAdc
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
3. Pulse Test: Pulse Width <300
µs,
Duty Cycle <2.0%.
2012-06
2012-11
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.
WILLAS [ WILLAS ELECTRONIC CORP ]
