Darlington Amplifier Transistors
MMBTA1xLT1
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
h
FE
MMBTA13
MMBTA14
MMBTA13
MMBTA14
V
CE(sat)
V
BE
5,000
10,000
10,000
20,000
––
—
—
—
—
—
1.5
2.0
Vdc
Vdc
Min
Max
Unit
––
ON CHARACTERISTICS (3)
DC Current Gain
(I
C
= 10 mAdc, V
CE
= 5.0 Vdc)
(I
C
= 100mAdc, V
CE
= 5.0Vdc)
Collector–Emitter Saturation Voltage
(I
C
= 100 mAdc, I
B
= 0.1 mAdc)
Base–Emitter On Voltage
(I
C
= 100mAdc, V
CE
= 5.0Vdc)
SMALL–SIGNAL CHARACTERISTICS
Current – Gain–Bandwidth Product(4)
(V
CE
= 5.0 Vdc, I
C
= 10mAdc, f = 100 MHz)
3. Pulse Test: Pulse Width
<
300
µs,
Duty Cycle
<
2.0%.
4. f
T
= |h f
e
| *f
test
.
f
T
125
—
MHz
R
S
i
n
e
n
IDEAL
TRANSISTOR
Figure 1. Transistor Noise Model
2012-11
WILLAS ELECTRONIC CORP.
WILLAS [ WILLAS ELECTRONIC CORP ]
