FM120-M
THRU
MMBTA0xLT1
Driver Transistors
FM1200-M
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123
•
Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
•
Low profile surface mounted application in order to
FEATURES
space.
optimize board
Low power loss, high efficiency.
•
•
We declare that the material of product
•
High current capability, low forward voltage drop.
compliance with RoHS requirements.
•
High surge capability.
is available
Pb-Free package
•
Guardring for overvoltage protection.
RoHS product for packing code suffix ”G”
•
Ultra high-speed switching.
Halogen free product for
metal silicon junction.
•
Silicon epitaxial planar chip,
packing code suffix “H”
Lead-free
•
MAXIMUM
parts meet environmental standards of
RATINGS
MIL-STD-19500 /228
Value
•
RoHS product for packing code suffix "G"
Rating
Symbol
MMBTA05 MMBTA06
Halogen free product for packing code suffix "H"
Collector–Emitter Voltage
V
CEO
60
80
Mechanical data
SOD-123H
WILLAS
PACKAGE
Pb Free Product
Features
Package outline
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
Unit
Vdc
SOT–23
0.040(1.0)
0.024(0.6)
ry
0.031(0.8) Typ.
60
80
Vdc
Collector–Base
rated flame retardant
V
CBO
•
Epoxy : UL94-V0
Voltage
Emitter–Base Voltage
4.0
Vdc
•
Case : Molded plastic, SOD-123H
V
EBO
,
•
Terminals :Plated terminals, solderable per MIL-STD-750
mAdc
Collector Current — Continuous
I
C
500
Method 2026
0.031(0.8) Typ.
3
COLLECTOR
Pr
eli
Total Device Dissipation FR– 5 Board, (1)
P
D
225
mW
2
25°C
T
A
=
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
EMITTER
1.8
mW/°C
Derate above 25°C
Ratings at 25℃ ambient temperature unless otherwise specified.
Thermal Resistance, Junction to Ambient
R
θJA
556
°C/W
Single phase half wave, 60Hz, resistive of inductive load.
Total Device Dissipation
For capacitive load, derate current by 20%
P
D
300
mW
Alumina Substrate, (2) T
A
= 25°C
2.4
mW/°C
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
UNIT
RATINGS
Derate above 25°C
Marking Code
Thermal Resistance, Junction to Ambient
12
θJA
13
14
15
18
10
115
120
R
417
°C/W
16
20
60
80
100
150
200
Maximum Recurrent Peak Reverse Voltage
Volts
V
RRM
Junction and Storage Temperature
T
J
, T
stg
30
–55 to
40
+150
50
°C
Volts
14
21
28
35
42
56
70
105
140
Maximum RMS Voltage
V
RMS
•
Polarity : Indicated by cathode band
THERMAL CHARACTERISTICS
•
Mounting Position : Any
Characteristic
•
Weight : Approximated 0.011 gram
na
Symbol
Max
Unit
20
30
40
50
60
Dimensions in inches and (millimeters)
1
BASE
mi
V
DC
I
FSM
R
ΘJA
C
J
T
J
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
DEVICE MARKING
80
1.0
30
100
150
200
Volts
Peak Forward Surge Current 8.3 ms single half sine-wave
I
O
MMBTA05LT1
= 1H,
MMBTA06LT1
= 1GM
Amps
Unit
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted.)
superimposed on rated load (JEDEC method)
Typical Thermal Resistance
Characteristic
(Note 2)
Typical Junction Capacitance (Note 1)
Amps
Symbol
OFF CHARACTERISTICS
Operating Temperature Range
Min
-55 to +125
Max
40
120
-55 to +150
℃/W
PF
℃
℃
-
65
to +175
Vdc
Storage Temperature Range
Breakdown Voltage(3)
TSTG
Collector–Emitter
V
(BR)CEO
60
(I
C
= 1.0 mAdc, I
B
= 0)
MMBTA05
—
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
Voltage
Emitter–Base Breakdown
Maximum Average
100
µAdc,
I
C
= 0)
(I
E
=
Reverse Current at @T A=25℃
Rated DC Blocking Voltage
Current
Collector Cutoff
SYMBOL
MMBTA06
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
UNIT
80
—
Volts
0.9
0.92
V
F
0.50
0.70
—
V
(BR)EBO
4.0
Vdc
0.85
@T A=125℃
I
R
0.5
I
CES
I
CBO
—
0.1
10
µAdc
µAdc
mAmp
NOTES:
( V
CE
= 60Vdc, I
B
= 0)
Emitter Cutoff Current
( V
CB
= 60Vdc, I
E
= 0)
MMBTA05
—
—
0.1
0.1
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
( V
CB
= 80Vdc, I
E
= 0)
MMBTA06
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
3. Pulse Test: Pulse Width < 300
µs,
Duty Cycle < 2.0%.
2012-06
2012-11
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.
WILLAS [ WILLAS ELECTRONIC CORP ]
