WILLAS
SOD-123
•
Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
•
Low profile surface mounted application in order to
optimize board space.
•
Low power loss, high efficiency.
•
High current capability, low forward voltage drop.
•
High surge capability.
ELECTRICAL
for overvoltage protection.
= 25°C unless otherwise noted) (Continued)
•
Guardring
CHARACTERISTICS
(T A
switching.
•
Ultra high-speed
Characteristic
•
CHARACTERISTICS
ON
Silicon epitaxial planar chip, metal silicon junction.
•
Lead-free parts meet environmental standards of
DC Current Gain
MIL-STD-19500 /228
(I
C
=
= 5.0 Vdc)
product for
CE
•
RoHS
1.0 mAdc, V
packing code suffix "G"
Halogen free product for packing code suffix "H"
(I
C
= 10 mAdc, V
data
Mechanical
CE
= 5.0 Vdc)
Symbol
h
FE
FM120-M
MMBT5551DW1T1
THRU
DUAL NPN SMALL
MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
1.0A SURFACE
SIGNAL SURFACE MOUNT TRANSISTOR
PACKAGE
FM1200-M
Pb Free Product
Features
Package outline
SOD-123H
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
Min
Max
Unit
––
0.071(1.8)
0.056(1.4)
80
80
30
—
250
—
Vdc
0.040(1.0)
0.024(0.6)
•
Epoxy : UL94-V0 rated flame retardant
(I
C
= 50 mAdc, V
CE
= 5.0Vdc)
•
Case : Molded plastic, SOD-123H
,
•
Terminals :Plated terminals, solderable per MIL-STD-750
Collector–Emitter Saturation Voltage
Method 2026
(I
C
= 10 mAdc, I
B
= 1.0 mAdc)
0.031(0.8) Typ.
0.031(0.8) Typ.
V
CE(sat)
—
—
V
BE(sat)
0.15
0.20
Vdc
•
Polarity : Indicated by cathode band
(I
C
= 50 mAdc, I
B
=
Any
•
Mounting Position :
5.0 mAdc )
•
Weight : Approximated 0.011 gram
Base–Emitter Saturation Voltage
(I
C
= 10 mAdc, I
B
= 1.0 mAdc)
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
—
—
1.0
1.0
Ratings at 25℃ ambient temperature unless otherwise specified.
(I
C
= 50 mAdc, I
B
= 5.0 mAdc)
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
RATINGS
Marking Code
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
U
V
RRM
V
RMS
V
DC
I
O
I
FSM
R
ΘJA
C
J
T
J
TSTG
12
20
14
20
13
30
21
30
14
40
28
40
15
50
35
50
16
60
42
60
1.0
30
18
80
56
80
10
100
70
100
115
150
105
150
120
200
140
200
V
V
V
A
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
A
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
Operating Temperature Range
Storage Temperature Range
-55 to +125
40
120
-55 to +150
℃
-
65
to +175
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
U
V
F
@T A=125℃
0.50
0.70
0.5
10
0.85
0.9
0.92
V
I
R
m
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-
0
2012-06
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP
WILLAS [ WILLAS ELECTRONIC CORP ]
