WILLAS
MMBT2222LT1
MMBT2222ALT1
ELECTRICAL CHARACTERISTICS
(T A = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
h
FE
35
50
75
MMBT2222A
only
35
100
50
30
40
V
CE(sat)
MMBT2222
MMBT2222A
MMBT2222
MMBT2222A
Base–Emitter Saturation Voltage
(I
C
= 150 mAdc, I
B
= 15 mAdc)
(I
C
= 500 mAdc, I
B
= 50 mAdc)
V
BE(sat)
MMBT2222
MMBT2222A
MMBT2222
MMBT2222A
––
0.6
––
––
f
250
300
––
––
––
2.0
0.25
–-
—
50
75
5.0
25
––
––
1.3
1.2
2.6
2.0
––
––
8.0
30
25
8.0
1.25
8.0
4.0
300
375
35
200
150
4.0
MHz
pF
pF
kΩ
X 10
—
µmhos
–4
Min
Max
Unit
––
ON CHARACTERISTICS
DC Current Gain
(I
C
= 0.1 mAdc, V
CE
= 10 Vdc)
(I
C
= 1.0 mAdc, V
CE
= 10 Vdc)
(I
C
= 10 mAdc, V
CE
= 10 Vdc)
(I
C
= 10 mAdc, V
CE
= 10 Vdc,T
A
= –55°C )
(I
C
= 150 mAdc, V
CE
= 10 Vdc) (3)
(I
C
= 150 mAdc, V
CE
= 1.0 Vdc) (3)
(I
C
= 500 mAdc, V
CE
= 10 Vdc)(3)
Collector–Emitter Saturation Voltage(3)
(I
C
= 150 mAdc, I
B
= 15 mAdc)
(I
C
= 500mAdc, I
B
= 50 mAdc)
––
––
—
—
300
––
––
—
Vdc
––
––
––
––
0.4
0.3
1.6
1.0
Vdc
MMBT2222
MMBT2222A
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product(4)
(I
C
= 20mAdc, V
CE
= 20Vdc, f = 100MHz)
Output Capacitance(V
CB
= 10 Vdc, I
E
= 0, f = 1.0 MHz)
Input Capacitance
MMBT2222
MMBT2222A
MMBT2222
T
C
obo
C
ibo
h
ie
h
re
h
fe
h
oe
(V
EB
= 0.5 Vdc, I
C
= 0, f = 1.0 MHz)
MMBT2222A
Input Impedance(V
CE
= 10 Vdc, I
C
= 1.0 mAdc, f = 1.0 kHz)
MMBT2222A
(V
CE
= 10 Vdc, I
C
= 10 mAdc, f = 1.0 kHz)
MMBT2222A
Voltage Feedback Ratio(V
CE
=10 Vdc, I
C
= 1.0mAdc, f =1.0kHz)
MMBT2222A
(V
CE
= 10 Vdc, I
C
= 10 mAdc, f = 1.0 kHz)
MMBT2222A
Small–Signal Current Gain(V
CE
=10Vdc,I
C
=1.0mAdc, f=1.0kHz)
MMBT2222A
(V
CE
= 10 Vdc, I
C
= 10 mAdc, f = 1.0 kHz)
MMBT2222A
Output Admittance(V
CE
=10 Vdc, I
C
= 1.0 mAdc,f =1.0 kHz)
MMBT2222A
(V
CE
= 10 Vdc, I
C
= 10 mAdc, f = 1.0 kHz)
MMBT2222A
Curren Base Time Comstant
(V
CB
= 20 Vdc, I
E
= 20 mAdc, f = 31.8 MHz)
MMBT2222A
Noise Figure(V
CE
=10Vdc, I
C
=100µAdc, R
S
=1.0kΩ, f =1.0kHz)
MMBT2222A
rb, C
C
NF
ps
dB
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
Storage Time
Fall Time
(V
CC
= 30 Vdc, V
EB(off)
= – 0.5 Vdc
I
C
= 150 mAdc, I
B1
= 15 mAdc)
(V
CC
= 30 Vdc, I
C
= 150 mAdc
I
B1
= I
B2
= 15 mAdc)
t
d
t
r
t
s
t
f
—
—
—
—
10
25
225
60
ns
ns
3. Pulse Test: Pulse Width <300
µs,
Duty Cycle <2.0%.
4.f
T
is defined as the frequency at which h
fe
extrapolates to unity.
WILLAS [ WILLAS ELECTRONIC CORP ]
