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MMBD4448TW 参数 Datasheet PDF下载

MMBD4448TW图片预览
型号: MMBD4448TW
PDF下载: 下载PDF文件 查看货源
内容描述: SOT- 363塑封装二极管 [SOT-363 Plastic-Encapsulate Diode]
分类和应用: 二极管光电二极管
文件页数/大小: 2 页 / 291 K
品牌: WILLAS [ WILLAS ELECTRONIC CORP ]
 浏览型号MMBD4448TW的Datasheet PDF文件第2页  
FM120-M
MMBD4448TW
THRU
SOT-363 Plastic-Encapsulate Diode
FM1200-M
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123
Batch process design, excellent power dissipation offers
WILLAS
PACKAGE
Pb Free Product
Features
Package outline
SOD-123H
SOT-363
0.146(3.7)
0.130(3.3)
Switching Diode
surface mounted application in order to
Low profile
optimize board space.
FEATURES
Low power loss, high efficiency.
Fast
High current capability, low forward voltage drop.
Switching Speed
High surge capability.
Ultra-Small Surface Mount Package
Guardring for overvoltage protection.
For General Purpose Switching Applications
Ultra high-speed switching.
High
Silicon epitaxial
Power Dissipation
silicon junction.
Conductance
planar chip, metal
Lead-free parts meet environmental standards of
Pb-Free package is available
MIL-STD-19500 /228
better reverse leakage current and thermal resistance.
0.012(0.3) Typ.
6
5
4
0.071(1.8)
0.056(1.4)
RoHS product for
for packing code
suffix
"G"
RoHS product
packing code
suffix
”G”
Halogen free product for packing code
suffix “H”
Halogen free product for packing code
suffix "H"
1
2
3
0.040(1.0)
0.024(0.6)
Mechanical data
Moisture Sensitivity Level 1
Epoxy : UL94-V0 rated flame retardant
Case : Molded plastic, SOD-123H
,
Terminals :Plated terminals, solderable per MIL-STD-750
MARKING:KA3
Method 2026
Polarity : Indicated by cathode band
Maximum Ratings
@ Ta= 25°C unless otherwise specified
Mounting Position : Any
Characteristic
Symbol
Weight : Approximated 0.011 gram
Non-Repetitive Peak Reverse Voltage
V
RM
ry
0.031(0.8) Typ.
0.031(0.8) Typ.
ina
Value
100
75
53
500
250
12
20
14
13
I
FSM
30
Dimensions in inches and (millimeters)
Unit
V
V
V
mA
mA
10
A
100
Working Peak Reverse Voltage
Ratings at 25℃ ambient temperature unless otherwise specified.
V
RWM
V
R
DC Blocking Voltage
Single phase half wave, 60Hz, resistive of inductive load.
V
R(RMS)
RMS Reverse Voltage
For capacitive load, derate
by
 
Forward Continuous Current
current
1)
20%
I
FM
(Note
Non-Repetitive Peak Forward Surge Current
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Power Dissipation (Note 1)
Marking Code
Pr
el
Average Rectified Output Current (Note 1)
RATINGS
im
I
O
@ t < 1ms
@ t <
V
RRM
1s
V
RMS
I
O
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
V
RRM
Peak Repetitive Reverse Voltage
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
UN
14
40
28
40
15
50
Maximum DC Blocking Voltage
Thermal Resistance Junction to Ambient
 
(Note 1)
V
DC
P
d
21
20
R
qJA
30
T
j
, T
STG
16
4
1.5
60
35
200
42
18
80
56
80
1.0
 
30
115
150
105
150
120
200
140
200
Vol
50
625
60
70
mW
100
°C/W
Vol
Vol
Maximum Average Forward Rectified
Range
Operating and Storage Temperature
Current
-55~+150
°C
Am
Electrical Characteristics
Characteristic
Typical Thermal Resistance (Note 2)
Reverse
Junction Capacitance (Note 1)
Typical
Breakdown Voltage (Note 2)
Operating Temperature Range
Storage
Voltage (Note 2)
Forward
Temperature Range
Peak Forward Surge Current 8.3 ms single half sine-wave
@ Ta = 25°C
superimposed on rated load (JEDEC method)
 
unless
I
FSM
otherwise specified
 
Min
-55 to +125
0.62
 
Am
R
ΘJA
C
J
T
J
TSTG
Symbol
V
(BR)R
V
F
 
75
¾
¾
¾
Max
¾
0.720
0.855
1.0
1.25
2.5
50
30
25
 
 
Unit
40
Test Conditions
V
120
I
R
= 10mA
 
-55
I
F
= 5.0mA
to +150
I
F
= 10mA
-
V
65
to +175
50mA
I
F
=
I
F
= 150mA
 
℃/
PF
CHARACTERISTICS
Reverse Current (Note 2)
Total Capacitance
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
@T A=125℃
Rated DC Blocking Voltage
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
UN
V = 75V
V
F
I
R
I
R
C
T
t
rr
0.50
¾
 
¾
¾
4.0
4.0
mA
R
V
R
= 75V, T
j
= 150°C
0.9
0.70
mA
0.85
mA
0.5
V
R
= 25V, T
j
= 150°C
V
R
= 20V
nA
10
V
R
= 0, f = 1.0MHz
pF
ns
I
F
= I
R
= 10mA,
I
rr
= 0.1 x I
R
, R
L
= 100W
0.92
 
Vol
mAm
NOTES:
Reverse Recovery Time
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
Notes:
1. Device mounted on FR-4 PCB, 1
2- Thermal Resistance From Junction to Ambient
inch x 0.85 inch x 0.062 inch.
2. Short duration test pulse used to minimize self-heating.
 
 
2012-06
WILLAS ELECTRONIC CORP.
2012-1
WILLAS ELECTRONIC CORP.