FM120-M
MMBD2004SW
THRU
SOT-323 Plastic-Encapsulate Diodes
FM1200-M
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123
•
Batch process design, excellent power dissipation offers
better
DIODE
SWITCHING
reverse leakage current and thermal resistance.
•
Low profile surface mounted application in order to
FEATURES
board space.
optimize
•
Low power loss,
a silicon switching dual in series diode
CMSD2004S type is
high efficiency.
•
High current capability, low forward voltage drop.
manufactured by
capability.
•
High surge
the epitaxial planar process, designed for
•
Guardring for overvoltage protection.
applications requiring high voltage capability. Power dissipation
•
Ultra high-speed switching.
Pb-Free package is available
•
Silicon epitaxial planar chip, metal silicon junction.
RoHS product for packing code suffix ”G”
•
Lead-free parts meet environmental standards of
Halogen free product for packing code suffix “H”
MIL-STD-19500 /228
•
RoHS product for packing
Moisture Sensitivity Level 1
code suffix "G"
Halogen free product for packing code suffix "H"
WILLAS
PACKAGE
Pb Free Product
Features
Package outline
SOD-123H
SOT-323
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
1
3
2
0.040(1.0)
0.024(0.6)
Mechanical data
•
Epoxy : UL94-V0 rated flame retardant
•
Case : Molded plastic, SOD-123H
MARKING : B6D
,
•
Terminals :Plated terminals, solderable per MIL-STD-750
Method 2026
0.031(0.8) Typ.
0.031(0.8) Typ.
Maximum Ratings @T
A
by cathode band
•
Polarity : Indicated
=25℃
•
Mounting Position : Any
Parameter
Symbol
•
Weight : Approximated 0.011 gram
Non-Repetitive Peak reverse voltage
DC Blocking Voltage
V
RM
V
R
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz,
Peak Repetitive Current
resistive of inductive load.
I
O
For capacitive load, derate current by 20%
Dimensions in inches and (millimeters)
Limit
300
240
225
225
13
30
21
30
14
40
28
40
Unit
V
V
mA
mA
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Continuous Forward Current
RATINGS
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
UNIT
I
F
Peak Repetitive Forward Current
Marking Code
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
I
FRM
V
RRM
V
RMS
Forward Surge Current tp=1
μs
I
FSM
12
20
14
20
625
15
50
35
4.0
16
60
42
60
1.0
30
40
120
18
80
56
80
10
100
70
100
mA
115
A
150
105
120
200
140
200
Volts
Volts
Forward Surge Current
Maximum DC Blocking Voltage
tp=1 s
I
FSM
V
DC
I
O
Pd
T
J
I
FSM
1.0
50
250
150
A
150
mW
℃
Volts
Maximum
Dissipation
Power
Average Forward Rectified Current
Peak Forward Surge Current 8.3 ms single half sine-wave
Junction temperature
superimposed on rated load (JEDEC method)
Amp
Amp
Storage temperature
(Note 2)
Typical Thermal Resistance
range
Typical Junction Capacitance (Note 1)
Operating Temperature Range
Storage Temperature
CHARACTERISTICS
ELECTRICAL
Range
CHARACTERISTICS
T
ΘJA
R
STG
C
J
T
J
-55~+150
-55 to +125
-55 to +150
℃
℃/W
PF
℃
℃
-
65
to +175
TSTG
(Ta=25℃ unless otherwise specified)
Parameter
Maximum Forward Voltage at 1.0A DC
Rated DC Blocking Voltage
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
UNIT
Symbol
V
F
I
R
V
(BR)
Test
0.50
conditions
0.70
Min
Max
0.85
Unit
0.9
V
0.92
Volts
Maximum Average Reverse Current at @T A=25℃
Reverse breakdown voltage
@T A=125℃
I
R
= 100μA
V
R
=240V
I
F
=100mA
V
R
=0V,f=1MHz
I
F
=I
R
=30mA,R
L
=100Ω
240
10
0.1
1
5
50
0.5
mAmp
NOTES:
Reverse
voltage leakage current
I
R
V
F
C
D
t
rr
mA
V
pF
ns
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
Forward voltage
2- Thermal Resistance From Junction to Ambient
Diode capacitance
Reveres recovery time
2012-06
WILLAS ELECTRONIC CORP.
2012-1
WILLAS ELECTRONIC CORP.
WILLAS [ WILLAS ELECTRONIC CORP ]
