FM120-M
LM1MA141WK
THRU
Common Cathode Silicon
FM1200-M
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
LM1MA142WK
Product
Pb Free
Dual Switching Diode
SOD-123 PACKAGE
•
Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
RECOVERY TIME EQUIVALENT TEST CIRCUIT
•
Low profile surface mounted application in order to
optimize board space.
•
Low power loss, high efficiency.
•
High current capability, low forward voltage drop.
•
High surge capability.
•
Guardring for overvoltage protection.
•
Ultra high-speed switching.
•
Silicon epitaxial planar chip, metal silicon junction.
•
Lead-free parts meet environmental standards of
MIL-STD-19500 /228
•
RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
WILLAS
Features
Package outline
INPUT PULSE
SOD-123H
OUTPUT
0.146(3.7)
0.130(3.3)
PULSE
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
Mechanical data
•
Epoxy : UL94-V0 rated flame retardant
•
Case : Molded plastic, SOD-123H
,
•
Terminals :Plated terminals, solderable per MIL-STD-750
I
F
, FORWARD CURRENT (mA)
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
0.031(0.8) Typ.
Method 2026
•
Polarity : Indicated by cathode band
•
Mounting Position : Any
•
Weight : Approximated 0.011 gram
I
R
, REVERSE CURRENT (µA)
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
Marking Code
V
F
, FORWARD VOLTAGE (VOLTS)
RATINGS
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
Figure 1. Forward Voltage
V
RRM
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
12
20
14
20
13
30
21
30
V
RMS
V
DC
I
O
I
FSM
R
ΘJA
C
J
T
J
TSTG
14
R
, REVERSE VOLTAGE
18
15
16
10
V
(VOLTS)
40
Figure 2. Reverse Current
100
50
60
80
28
35
42
56
70
40
50
60
1.0
30
80
100
115
150
105
150
120
200
140
200
V
V
V
A
C
D
, DIODE CAPACITANCE (pF)
A
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
Operating Temperature Range
Storage Temperature Range
-55 to +125
40
120
-55 to +150
℃
-
65
to +175
Maximum Forward Voltage at 1.0A DC
Rated DC Blocking Voltage
CHARACTERISTICS
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
U
V
F
I
R
0.50
0.70
0.5
10
0.85
0.9
0.92
V
Maximum Average Reverse Current at @T A=25℃
@T A=125℃
m
V
R
, REVERSE VOLTAGE (VOLTS)
Figure 3. Diode Capacitance
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
NOTES:
2- Thermal Resistance From Junction to Ambient
2012-06
WILLAS ELECTRONIC CORP
2012-1
WILLAS ELECTRONIC CORP.
WILLAS [ WILLAS ELECTRONIC CORP ]
