FM120-M
LM1MA141WA
THRU
Common Anode Silicon
LM1MA142WA
FM1200-M
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
WILLAS
Dual Switching Diode
SOD-123
PACKAGE
Pb Free Product
•
Batch process design, excellent power dissipation offers
better reverse
EQUIVALENT TEST CIRCUIT
RECOVERY TIME
leakage current and thermal resistance.
•
Low profile surface mounted application in order to
optimize board space.
•
Low power loss, high efficiency.
•
High current capability, low forward voltage drop.
•
High surge capability.
•
Guardring for overvoltage protection.
R
L
A
•
Ultra high-speed switching.
•
Silicon epitaxial planar chip, metal silicon junction.
•
Lead-free parts meet environmental standards of
MIL-STD-19500 /228
•
RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
100
IF, FORWARD CURRENT (mA)
Features
Package outline
INPUT PULSE
t
r
t
p
t
10%
90%
V
R
t
p
= 2
µs
t
r
= 0.35 ns
I
F
= 10 mA
V
R
= 6 V
R
L
= 100
Ω
rr
0.071(1.8)
0.056(1.4)
0.146(3.7)
0.130(3.3)
SOD-123H
OUTPUT
PULSE
t
rr
0.012(0.3) Typ.
I
F
t
I = 0.1 I
R
Mechanical data
IR , REVERSE CURRENT (µA)
•
Epoxy : UL94-V0 rated flame retardant
•
Case : Molded plastic, SOD-123H
T
A
= 85°C
,
•
Terminals :Plated terminals, solderable per MIL-STD-750
Method 2026
T
A
= -40°C
10
0.031(0.8) Typ.
T
A
= 150°C
T
A
= 125°C
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
1.0
10
•
Polarity : Indicated by cathode band
•
Mounting Position : Any
•
Weight : Approximated 0.011 gram
1.0
0.1
Dimensions
=
in inches and (millimeters)
T 85°C
A
0.01
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
T
A
= 25°C
T
A
= 55°C
Ratings at 25℃ ambient temperature unless otherwise specified.
T
A
= 25°C
Single phase half wave, 60Hz, resistive of inductive load.
0.001
0.1
50
0
10
20
30
40
0.6
1.0
For capacitive load,
0.4
derate current by 20%
0.8
1.2
0.2
V
R
, REVERSE VOLTAGE (VOLTS)
V
F
, FORWARD VOLTAGE (VOLTS)
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
RATINGS
Marking Code
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
Maximum Recurrent Peak Reverse Voltage
Figure 1. Forward Voltage
1.75
CD , DIODE CAPACITANCE (pF)
V
RRM
V
RMS
V
DC
I
O
I
FSM
R
ΘJA
C
J
T
J
TSTG
12
20
14
20
13
30
21
30
14
40
28
40
15
Figure 2. Reverse Current
16
18
10
50
60
80
100
35
50
42
60
1.0
30
56
80
70
100
115
150
105
150
120
200
140
200
V
V
V
A
1.5
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
A
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
Operating Temperature Range
Storage Temperature Range
1.25
-55 to +125
40
120
-55 to +150
℃
-
65
to +175
Maximum Forward Voltage at 1.0A DC
1.0
V
F
0.50
0.70
0.85
0.5
8
10
0.9
0.92
CHARACTERISTICS
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
U
V
0.75
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
@T A=125℃
0
I
R
2
4
6
m
V
R
, REVERSE VOLTAGE (VOLTS)
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
Figure 3. Diode Capacitance
2012-06
WILLAS ELECTRONIC CORP
2012-1
WILLAS ELECTRONIC CORP.
WILLAS [ WILLAS ELECTRONIC CORP ]
