WILLAS
Transient Voltage Suppressors
BARRIER RECTIFIERS -20V- 200V
1.0A SURFACE MOUNT SCHOTTKY
for ESD Protection
SOD-123
•
Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
•
Low profile surface mounted application in order to
Electrical Characteristics
optimize board space.
Low power
Part
•
Numbers
loss, high efficiency.
V
BR
•
High current capability, low forward voltage drop.
V
RwM
I
R
I
T
•
High surge capability.
Typ
Min.
Max.
•
Guardring for overvoltage protection.
switching.
•
Ultra high-speed
V
V
V
mA
V
µA
•
Silicon epitaxial planar chip, metal silicon junction.
ESDA6V1W6
parts
6.1
environmental
7.2
6.7
5
1
meet
standards of
1
•
Lead-free
MIL-STD-19500 /228
1.Square pulse I
PP
for packing code suffix "G"
=aT*(T
amb
-25°C)*V
BR
(25°C)
•
RoHS product
=15A,t
p
=2.5µs 2.V
BR
Halogen free product for packing
Typical Characteristics
code suffix "H"
SOD-123H
FM120-M
THRU
FM1200-M
PACKAGE
Pb Free Produc
Features
Package outline
V
F
Max.
V
1.25
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
C
I
F
mA
200
Typ. 0v bias
0.071(1.8)
0.056(1.4)
pF
35
Mechanical data
•
Epoxy : UL94-V0 rated flame retardant
•
Case : Molded plastic, SOD-123H
,
•
Terminals :Plated terminals, solderable per MIL-STD-750
Method 2026
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
0.031(0.8) Typ.
•
Polarity : Indicated by cathode band
•
Mounting Position : Any
•
Weight : Approximated 0.011 gram
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
Marking Code
SYMBOL
Fig1.Peak pulse
RATINGS
versus exponential
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
power
Fig2. Clamping voltage versus peak
Pulse duration (T
j
initial=25°C)
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
V
RRM
V
RMS
V
DC
I
O
I
FSM
R
ΘJA
C
J
T
J
TSTG
12
20
14
13
30
21
pulse current (T
j
initial=25°C, rectangular
40
50
60
80
100
28
40
14
15
16
18
10
115
150
105
150
120
200
140
Waveform,
42
=2.5μs)
t
p
35
56
50
60
1.0
30
80
70
100
20
30
200
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
Operating Temperature Range
Storage Temperature Range
-55 to +125
40
120
-55 to +150
-
65
to +175
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
V
F
@T A=125℃
0.50
0.70
0.5
10
0.85
0.9
0.92
I
R
NOTES:
1-
Fig 3 Capacitance Versus reverse
4.0 VDC.
Measured at 1 MHZ and applied reverse voltage of
applied
voltage Fig 4 Peak Forward Voltage Drop versus
forward current
2- Thermal Resistance From Junction to Ambient
2012-09
2012-06
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP
WILLAS [ WILLAS ELECTRONIC CORP ]
