FM120-M
ESDA6V1W5
THRU
Transient Voltage Suppressors
BARRIER RECTIFIERS -20V- 200V
FM1200-M
1.0A SURFACE MOUNT SCHOTTKY
for ESD Protection
SOD-123
PACKAGE
WILLAS
Pb Free Produc
Features
•
Batch process design, excellent power dissipation offers
Electrical Parameter
current and thermal resistance.
better reverse leakage
•
Low profile surface mounted application in order to
optimize board space.
•
Low power loss, high efficiency.
•
High
Symbol
current capability, low forward voltage drop.
Parameter
•
High surge capability.
I
PP
Guardring for overvoltage protection.
Maximum Reverse Peak Pulse Current
•
V
•
C
Ultra high-speed switching.
@ I
PP
Clamping Voltage
•
Silicon epitaxial planar chip, metal silicon junction.
V
RWM
Working Peak Reverse Voltage
•
Lead-free parts meet environmental standards of
MIL-STD-19500 /228
Maximum Reverse Leakage Current
I
•
RoHS product for packing code suffix "G"
R
V
RWM
Halogen free product for packing code suffix "H"
Package outline
SOD-123H
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
@
I
Mechanical data
Test Current
T
V
BR
UL94-V0 rated flame retardant
•
Epoxy :
Breakdown Voltage @ I
T
I
•
Case : Molded plastic, SOD-123H
Forward Current
F
,
•
Terminals :Plated terminals, solderable per MIL-STD-750
V
F
Forward Voltage @ I
F
Method 2026
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
0.031(0.8) Typ.
•
Polarity : Indicated by cathode band
•
Mounting Position : Any
•
Weight : Approximated 0.011
Electrical Characteristics
gram
Dimensions in inches and (millimeters)
Part Numbers
V
BR
V
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
F
I
V
I
R
Ratings at 25℃ ambient temperature unless otherwise
T
specified.
RWM
Min.
Typ
Max.
Max.
C
I
F
mA
16
60
42
60
1.0
30
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
V
V
V
mA
RATINGS
Typ. 0v bias
pF
10
100
70
100
V
5
µA
1
15
50
35
50
V
1.25
ESDA6V1W5
Marking Code
12
13
14
20
30
Maximum Recurrent Peak Reverse Voltage
V
RRM
1.Square pulse I
PP
=15A,t
p
=2.5µs 2.V
BR
=aT*(T
amb
-25°C)*V
BR
(25°C)
40
6.1
6.7
7.2
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
1
200
18
80
56
80
35
115
150
105
150
120
200
140
200
Typical Characteristics
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
Maximum RMS Voltage
V
RMS
V
DC
I
O
I
FSM
R
ΘJA
C
J
T
J
TSTG
14
20
21
30
28
40
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
Operating Temperature Range
Storage Temperature Range
-55 to +125
40
120
-55 to +150
-
65
to +175
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
V
F
@T A=125℃
0.50
0.70
0.5
10
0.85
0.9
0.92
I
R
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
Fig1.Peak pulse power versus exponential
Pulse duration (T
j
initial=25°C)
Fig2. Clamping voltage versus peak
pulse current(T
j
initial=25°C, rectangular
Waveform, t
p
=2.5μs)
2012-06
WILLAS ELECTRONIC CORP
2012-09
WILLAS ELECTRONIC CORP.
WILLAS [ WILLAS ELECTRONIC CORP ]
