FM120-M
DTC144EE
THRU
NPN Digital Transistor
FM1200-M
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123
•
Batch process design, excellent power dissipation offers
WILLAS
PACKAGE
Pb Free Produ
Features
Package outline
•
Features
.035(0.90)
.028(0.70)
•
•
•
•
•
better reverse leakage current and thermal resistance.
•
Low profile surface mounted application in order to
optimize board
available
Pb-Free package is
space.
•
Low power loss, high efficiency.
RoHS
•
product for
capability,
code suffix ”G”
drop.
High current
packing
low forward voltage
•
High surge capability.
Halogen free product for packing code suffix “H”
Guardring
94 V-0 flammability rating
Epoxy
•
meets UL
for overvoltage protection.
•
Sensitivity Level 1
Moisure
Ultra high-speed switching.
Silicon epitaxial planar chip, metal silicon
of an inverter circuit
Built-in
•
bias resistors enable the configuration
junction.
•
Lead-free parts meet
input resistors
without connecting external
environmental standards of
MIL-STD-19500 /228
The bias resistors consist of thin-film resistors with complete
•
RoHS product for packing code suffix "G"
isolation to allow negative biasing of the input. They also have the
Halogen free product for packing code suffix "H"
SOT-523
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
SOD-123H
.067(1.70)
.059(1.50)
0.071(1.8)
0.056(1.4)
advantage of almost completely eliminating parasitic effects.
Mechanical data
Only the on/off conditions need to be set for operation, making
Epoxy UL94-V0 rated flame retardant
device
•
design
:
easy
•
Case : Molded plastic, SOD-123H
,
•
Terminals :Plated terminals, solderable per MIL-STD-750
.014(0.35)
0.040(1.0)
.010(0.25)
.043(1.10)
.035(0.90)
0.031(0.8) Typ.
.004(0.10)MIN.
0.024(0.6)
0.031(0.8) Typ.
Absolute maximum
Method 2026
25
ratings @
Dimensions in inches and (millimeters)
Symbol
•
Polarity : Indicated by cathode band
Min
Parameter
Typ
Max
Unit
V
CC
---
50
---
V
Mounting Position : Any
•
Supply voltage
V
IN
Input voltage
-10
---
40
V
•
Output current
Weight : Approximated 0.011 gram
---
I
O
---
mA
100
P
d
Power dissipation
---
150
---
mW
T
j
Junction temperature
RATINGS AND ELECTRICAL CHARACTERISTICS
---
150
---
MAXIMUM
T
stg
Storage temperature
-55
---
150
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
RATINGS
Marking Code
Electrical Characteristics @ 25
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M
.008(0.20)
12
13
Maximum Recurrent Peak Reverse Voltage
V
Symbol
Parameter
Min
RRM
Typ
20
Max
30
Unit
V
I(off)
0.5
RMS
---
14
---
21
V
Maximum
Input
Voltage
(V
CC
=5V, I
O
=100A)
RMS
voltage
V
---
V
V
I(on)
---
(V
O
=0.3V, I
O
=2mA)
3.0
Maximum DC Blocking Voltage
V
DC
---
20
0.3
30
V
V
O(on)
Output voltage (I
O
/I
I
10mA/0.5mA)
=
---
I
I
=
Rectified Current
---
I
O
---
0.18
mA
Maximum
Input current (V
I
5V)
Average Forward
I
A
Output current (V
CC
=50V, V
I
0)
=
---
---
0.5
O(off)
Peak Forward Surge Current
(V
O
=5V, I
O
5mA)
single
G
I
DC current gain
8.3 ms
=
half sine-wave
68
I
FSM
---
---
K¡
R
1
Input
rated load
32.9
47
61.1
superimposed on
resistance
(JEDEC method)
R
2
/R
1
Thermal Resistance (Note 2)
Resistance ratio
0.8
ΘJA
1.0
1.2
Typical
R
Transition frequency
MHz
f
T
---
C
J
250
---
Typical Junction Capacitance
f=100MHz)
(V
O
=10V, I
O
=5mA,
(Note 1)
-55 to +125
Operating Temperature Range
T
J
Storage Temperature Range
TSTG
14
40
28
40
15
50
35
50
16
60
42
60
.004(0.10)
10
18
80
56
80
.069(1.75)
.057(1.45)
100
70
100
115
150
105
150
120
200
140
200
.004(0.10)MAX.
1.0
.035(0.90)
.028(0.70)
30
.014(0.35)
40
.006(0.15)
120
-55 to +150
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
Dimensions in inches and (millimeters)
0.50
0.70
0.5
10
0.85
0.9
0.92
-
65
to +175
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
V
F
@T A=125℃
*Marking: 26
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
I
R
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-
0
2012-06
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC COR
WILLAS [ WILLAS ELECTRONIC CORP ]
