FM120-M
DTC144ECA
THRU
NPN Digital Transistor
FM1200-M
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123
ON Characteristics
•
Batch process design, excellent power dissipation offers
WILLAS
PACKAGE
OFF Characteristics
Pb Free Produc
Features
Package
Typical Characteristics
outline
1
100
30
V
I(ON)
10
3
1
better reverse leakage current and thermal resistance.
V =0.3V
•
Low profile surface mounted application
O
in order to
optimize board space.
•
Low power loss, high efficiency.
•
High current capability, low forward voltage drop.
•
High surge capability.
•
Guardring for overvoltage protection.
•
Ultra high-speed switching.
•
Silicon epitaxial planar chip, metal silicon junction.
T
a
=25
℃
•
Lead-free parts meet environmental standards of
T
a
=100
℃
MIL-STD-19500 /228
•
RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
SOD-123H
V
CC
=5V
0.3
(V)
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
(mA)
I
O
0.1
INPUT VOLTAGE
OUTPUT CURRENT
T
a
=100
℃
0.03
0.071(1.8)
0.056(1.4)
T
a
=25
℃
0.01
0.3
Mechanical data
3E-3
0.040(1.0)
0.024(0.6)
•
Epoxy : UL94-V0 rated flame retardant
0.1
: Molded plastic, SOD-123H
10
30
0.1
•
Case
0.3
1
3
,
•
Terminals
OUTPUT CURRENT I
solderable per MIL-STD-750
:Plated terminals,
(mA)
O
1E-3
0.0
0.4
0.031(0.8) Typ.
0.8
1.2
1.6
2.0
0.031(0.8) Typ.
INPUT VOLTAGE
V
I(OFF)
(V)
Method 2026
1000
•
Polarity : Indicated by cathode band
V
O(ON)
—— I
O
•
Mounting Position : Any
•
Weight : Approximated 0.011 gram
Dimensions in inches and (millimeters)
G
I
I
O
/I
I
=20
1000
——
I
O
V
O
=5V
(mV)
300
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
300
T
a
=100
℃
T
a
=25
℃
OUTPUT VOLTAGE
100
RATINGS
T
a
=100
℃
30
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
Marking Code
Maximum Recurrent Peak Reverse Voltage
30
V
RRM
V
RMS
V
DC
I
O
30
I
FSM
R
ΘJA
C
J
T
J
TSTG
f=1MHz
T
a
=25
℃
12
20
14
20
DC CURRENT GAIN
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
V
O(ON)
G
I
100
13
30
10
21
30
3
14
40
28
40
15
50
35
50
16
60
42
60
1.0
3
30
40
120
I
O
18
80
56
80
10
100
70
100
115
150
105
150
120
200
140
200
Maximum RMS Voltage
Maximum DC Blocking Voltage
T
a
=25
℃
Maximum Average Forward Rectified Current
10
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
OUTPUT CURRENT I
0.5
1
3
10
50
1
0.1
10
30
100
0.3
1
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
Operating Temperature Range
——
C
O
Storage Temperature Range
8
O
(mA)
OUTPUT CURRENT
(mA)
-55 to +125
400
-55 to +150
V
R
P
D
——
T
a
-
65
to +175
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
(pF)
6
350
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
(mW)
V
F
@T A=125℃
Rated DC Blocking Voltage
NOTES:
C
O
4
P
D
I
R
300
0.50
0.70
0.5
10
0.85
0.9
0.92
250
POWER DISSIPATION
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2
CAPACITANCE
200
DTC144ECA
150
100
50
0
0
5
10
15
20
0
0
25
50
75
100
a
125
150
2012-06
REVERSE BIAS VOLTAGE
V
R
(V)
AMBIENT TEMPERATURE
T (
℃
WILLAS
)
ELECTRONIC COR
2012-
0
WILLAS ELECTRONIC CORP.
WILLAS [ WILLAS ELECTRONIC CORP ]
