FM120-M
DTC124ECA
THRU
NPN Digital Transistor
FM1200-M
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123
•
Batch process design, excellent power dissipation offers
SOD-123H
WILLAS
PACKAGE
Pb Free Produc
Features
Package outline
better
Features
reverse leakage current and thermal resistance.
•
•
•
•
•
•
•
Low profile surface mounted application in order to
Pb-Free package is
space.
available
optimize board
Low power
packing code suffix
RoHS
•
product for
loss, high efficiency.
”G”
•
High current capability, low forward
suffix
drop.
Halogen free product for packing code
voltage
“H”
High surge capability.
Epoxy
•
meets UL 94 V-0 flammability rating
•
Guardring for overvoltage protection.
Moisure Sensitivity Level 1
•
Ultra high-speed switching.
Built-in bias resistors enable
chip,
configuration
junction.
•
Silicon epitaxial planar
the
metal silicon
of an inverter circuit
without
Lead-free parts meet environmental standards of
•
connecting external input resistors
The bias resistors consist of thin-film resistors with complete
MIL-STD-19500 /228
isolation to allow negative biasing
suffix "G"
•
RoHS product for packing code
of the input. They also have the
advantage of almost completely eliminating parasitic effects.
Halogen free product for packing code suffix "H"
Only the on/off conditions need to be set for operation, making
Mechanical data
device
•
design
:
easy
Epoxy UL94-V0 rated flame retardant
0.031(0.8) Typ.
SOT-23
0.012(0.3) Typ.
.063(1.60)
.047(1.20)
0.146(3.7)
0.130(3.3)
.122(3.10)
.106(2.70)
0.071(1.8)
0.056(1.4)
.080(2.04)
.070(1.78)
.006(0.15)MIN.
0.040(1.0)
0.024(0.6)
•
Case : Molded plastic, SOD-123H
Absolute
•
maximum ratings @ 25
solderable per MIL-STD-750 ,
Terminals :Plated terminals,
Symbol
V
CC
V
IN
I
O
I
C(MAX)
P
d
T
j
T
stg
0.031(0.8) Typ.
Junction temperature
Storage temperature
MAXIMUM
RATINGS AND
Electrical Characteristics @ 25
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
.008(0.20)
.003(0.08)
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M
RATINGS
Symbol
Parameter
Min
Typ
Max
Unit
Marking Code
voltage (V
CC
=5V, I
O
=100A)
---
12
---
V
I(off)
13
V
14
15
16
18
10
115
120
0.5
Input
---
RRM
---
20
3.0
30
V
V
I(on)
(V
Reverse
I
Voltage
=0.2V,
O
=5mA)
40
50
60
80
100
150
200
Maximum Recurrent Peak
O
.004(0.10)MAX.
V
V
O(on)
Output voltage (I
O
/I
I
10mA/0.5mA)
=
---
0.1
0.3
V
14
21
28
35
42
56
70
105
140
Maximum RMS Voltage
V
RMS
I
I
=
I
5V)
Input current (V
---
---
0.36
mA
DC Blocking Voltage
40
50
60
80
100
150
200
I
Maximum
Output current (V
CC
=50V, V
I
0)
=
---
V
DC
---
20
0.5
30
A
O(off)
G
I
=
56
I
O
---
---
Maximum
DC current gain (V
O
=5V, I
O
Current
Average Forward Rectified
5mA)
1.0
.020(0.50)
.012(0.30)
R
1
Input resistance
15.4
22
K¡
28.6
R
2
/R
1
Forward Surge Current 8.3 ms single half sine-wave
0.8
Resistance ratio
1.0
1.2
Peak
30
I
FSM
Transition
load (JEDEC method)
superimposed on rated
frequency
f
T
---
250
---
MHz
Dimensions in inches and (millimeters)
(V
O
=10V, I
O
=5mA, f=100MHz)
40
Typical Thermal Resistance (Note 2)
R
ΘJA
120
Typical Junction Capacitance (Note 1)
C
J
-55 to +125
-55 to +150
Operating Temperature Range
T
J
.083(2.10)
.110(2.80)
•
•
Mounting Position : Any
Output current
Power dissipation
•
Weight : Approximated 0.011 gram
Parameter
Method 2026
Supply voltage
Polarity : Indicated by cathode band
Input voltage
Min
---
-10
Typ
Max
Unit
50
---
V
Dimensions in inches and (millimeters)
---
40
V
30
---
---
mA
100
---
200
---
mW
---
150
---
-55
---
150
ELECTRICAL CHARACTERISTICS
Storage Temperature Range
TSTG
-
65
to +175
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
Rated DC Blocking Voltage
Suggested Solder
Pad Layout
SYMBOL
*Marking: 25
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
V
F
I
R
0.50
0.70
.031
0.85
0.9
0.92
Maximum Average Reverse Current at @T A=25℃
@T A=125℃
.800
.035
.900
0.5
10
.079
2.000
inches
mm
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
.037
.950
.037
.950
2012-
0
2012-06
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC COR
.055(1.40)
.035(0.89)
WILLAS [ WILLAS ELECTRONIC CORP ]
