FM120-M
DTC123JUA
THRU
NPN Digital Transistor
FM1200-M
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
design, excellent
•
Batch process
ON Characteristics
power dissipation offers
better reverse leakage current and thermal
=0.3V
V
O
resistance.
•
Low profile surface mounted application in order to
optimize board space.
•
Low power loss, high efficiency.
•
High current capability, low forward voltage drop.
•
High surge capability.
•
Guardring for overvoltage protection.
•
Ultra high-speed switching.
•
Silicon epitaxial planar chip, metal silicon junction.
standards of
•
Lead-free parts meet environmental
℃
T
a
=25
MIL-STD-19500 /228
•
RoHS product for packing code suffix "G"
℃
T
a
=100
Halogen free product for packing code suffix "H"
WILLAS
Features
Typical Characteristics
outline
Package
OFF Characteristics
10
SOD-123
PACKAGE
Pb Free Produc
100
SOD-123H
V
CC
=5V
30
3
(V)
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
V
I(ON)
10
(mA)
I
0
1
INPUT VOLTAGE
OUTPUT CURRENT
3
0.3
T
a
=100
℃
T
a
=25
℃
0.071(1.8)
0.056(1.4)
1
0.1
0.3
Mechanical data
0.03
0.040(1.0)
0.024(0.6)
•
Epoxy : UL94-V0 rated flame retardant
0.1
0.3
0.1
Case : Molded
1
plastic,
3
10
100
30
SOD-123H
•
,
OUTPUT
terminals,
(mA)
•
Terminals :Plated
CURRENT I
solderable per MIL-STD-750
O
0.01
0.2
0.4
0.031(0.8) Typ.
0.6
0.8
1.0
0.031(0.8) Typ.
INPUT VOLTAGE
V
I(OFF)
(V)
Method 2026
1000
•
Polarity : Indicated by cathode band
V
O(ON)
—— I
O
•
Mounting Position : Any
•
Weight : Approximated 0.011 gram
Dimensions in inches and (millimeters)
G
I
I
O
/I
I
=20
1000
——
I
O
V
O
=5V
(mV)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
300
300
OUTPUT VOLTAGE
100
RATINGS
Marking Code
Maximum RMS Voltage
30
Maximum DC Blocking Voltage
T
a
=100
℃
T
a
=25
℃
30
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
Maximum Recurrent Peak Reverse Voltage
V
RRM
V
RMS
V
DC
I
O
I
FSM
R
ΘJA
C
J
100
12
20
14
20
DC CURRENT GAIN
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
T
a
=100
℃
G
I
100
V
O(ON)
T
a
=25
℃
13
30
10
21
30
3
14
40
28
40
15
50
35
50
16
60
42
60
1.0
3
30
40
120
P
D
18
80
56
80
10
100
70
100
115
150
105
150
120
200
140
200
Maximum Average Forward Rectified Current
Peak Forward Surge Current 8.3 ms single half sine-wave
1
10
30
3
OUTPUT CURRENT
superimposed on rated load (JEDEC method)
I
O
(mA)
10
1
0.1
10
30
100
0.3
1
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
Operating Temperature Range
O
C
10
Storage Temperature Range
OUTPUT CURRENT
I
O
(mA)
-55 to +125
400
-55 to +150
——
V
R
T
J
TSTG
f=1MHz
T
a
=25
℃
—— T
a
-
65
to +175
CHARACTERISTICS
(pF)
8
Maximum Forward Voltage at 1.0A DC
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
(mW)
350
V
F
@T A=125℃
C
O
Maximum Average Reverse Current at @T A=25℃
OUTPUT CAPACITANCE
300
0.50
0.70
0.5
10
0.85
0.9
0.92
Rated DC Blocking Voltage
6
P
D
POWER DISSIPATION
I
R
250
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
4
200
DTC123JUA
150
100
2
50
0
0
4
8
12
16
20
0
0
25
50
75
100
125
150
2012-
0
2012-06
REVERSE BIAS VOLTAGE
V
R
(V)
AMBIENT TEMPERATURE
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC COR
T
a
(
℃
)
WILLAS [ WILLAS ELECTRONIC CORP ]
