FM120-M
DTC114TCA
THRU
NPN Digital Transistor
FM1200-M
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123
•
Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
•
Low profile surface mounted application in order to
optimize board space.
•
Low power loss, high efficiency.
Pb-Free
•
package is
capability, low forward voltage drop.
High current
available
•
High
for
capability.
RoHS product
surge
packing code suffix ”G”
•
Guardring for overvoltage protection.
Halogen
•
free product for packing code suffix “H”
Ultra high-speed switching.
Epoxy meets UL
epitaxial
flammability rating
•
Silicon
94 V-0
planar chip, metal silicon junction.
Moisure Sensitivity
parts meet environmental standards of
•
Lead-free
Level 1
Built-in bias resistors enable the configuration of an inverter circuit
MIL-STD-19500 /228
•
RoHS product for packing code suffix "G"
without connecting external input resistors (see equivalent circuit)
Halogen
consist of thin-film
code suffix "H"
The bias resistors
free product for packing
resistors with complete
SOD-123H
WILLAS
PACKAGE
Pb Free Produ
Features
Package outline
•
Features
SOT-23
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
•
•
Mechanical
biasing
isolation to allow negative
data
of the input. They also have the
advantage
Epoxy : UL94-V0 rated flame retardant
•
of almost completely eliminating parasitic effects
Only the on/off conditions need to be set for operation, making
•
Case : Molded plastic, SOD-123H
device design easy
,
•
Terminals :Plated terminals, solderable per MIL-STD-750
Method 2026
.063(1.60)
.047(1.20)
.122(3.10)
0.071(1.8)
.106(2.70)
0.056(1.4)
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
.080(2.04)
.070(1.78)
.006(0.15)MIN.
0.031(0.8) Typ.
•
Polarity : Indicated by cathode band
Absolute Maximum Ratings
: Any
•
Mounting Position
Parameter
Symbol
Value
•
Weight : Approximated 0.011 gram
Collector-Base Voltage
V
50
CBO
Dimensions in inches and (millimeters)
Unit
V
V
CHARACTERISTICS
V
mA
Collector
Single phase half wave, 60Hz, resistive of inductive load.
Dissipation
P
C
200
mW
For capacitive load, derate current by 20%
Junction Temperature
T
J
150
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M
RATINGS
.008(0.20)
Storage Temperature Range
T
STG
-55~150
Marking Code
12
13
14
15
16
18
.003(0.08)
10
115
120
20
30
40
50
60
80
100
150
200
Maximum Recurrent Peak Reverse Voltage
V
RRM
Maximum RMS Voltage
V
RMS
V
DC
14
20
21
30
28
40
35
42
56
80
70
100
.083(2.10)
.110(2.80)
Collector-Emitter Voltage
V
CEO
50
MAXIMUM RATINGS AND ELECTRICAL
Emitter-Base voltage
V
EBO
5
Collector
Ratings at 25℃ ambient temperature
C
unless otherwise specified.
Current-Continuous
I
100
105
150
140
200
Electrical Characteristics
Maximum DC Blocking Voltage
Sym
Parameter
Min
I
Typ
Max Unit
Maximum Average Forward Rectified Current
O
Collector-Base Breakdown Voltage
---
50
---
V
V
(BR)CBO
Peak
(I
C
=50uA, I
E
=0)
Forward Surge Current 8.3 ms single half sine-wave
I
FSM
Collector-Emitter Breakdown Voltage
.020(0.50)
50
---
---
V
V
(BR)CEO
superimposed on rated load (JEDEC method)
(I
C
=1mA, I
B
=0)
.012(0.30)
40
Typical Thermal Resistance (Note 2)
R
ΘJA
Emitter-Base Breakdown Voltage
5
---
---
V
V
(BR)EBO
(I
E
Junction Capacitance (Note 1)
120
Typical
=50uA, I
C
=0)
C
J
Collector Cut-off Current
Dimensions in inches and (millimeters)
-55 to +150
---
0.5
-55 to +125
uA
I
CBO
Operating Temperature Range
T
J
---
(V
CB
=50V, I
E
=0)
-
65
to +175
Storage Temperature Range
TSTG
Emitter Cut-off Current
I
EBO
---
---
0.5
uA
(V
EB
=4V, I
C
=0)
DC Current Gain
CHARACTERISTICS
Suggested Solder
100
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
300
600
---
h
FE
(V
CE
=5V, I
C
=1mA)
0.9
Maximum Forward Voltage at 1.0A DC
0.92
V
F
0.50
0.70
Pad Layout
0.85
Collector-Emitter Saturation Voltage
---
---
0.3
V
V
CE(sat)
Maximum Average Reverse Current at @T A=25℃
(I
C
=10mA, I
B
=1mA)
.031
0.5
I
R
.800
R
1
Rated DC Blocking Voltage
Input Resistor
7
10
13
K
10
@T A=125℃
Transition Frequency
.035
---
250
---
MHz
f
T
(V
.900
NOTES:
CE
=10V, I
E
=-5mA, f=100MHz)
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
.079
2.000
inches
mm
*Marking: 04
.037
.950
.037
.950
2012-
0
2012-06
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC COR
.055(1.40)
.035(0.89)
50
60
.004(0.10)MAX.
1.0
30
WILLAS [ WILLAS ELECTRONIC CORP ]
