FM120-M
DTC113ZUA
THRU
NPN Digital Transistor
FM1200-M
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123
•
Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
WILLAS
PACKAGE
Pb Free Produ
Features
Package outline
SOD-123H
•
Low profile surface mounted application in order to
optimize board space.
•
.004(0.10)MIN.
Features
•
•
•
Low power loss, high efficiency.
•
High current capability, low forward voltage drop.
•
package is available
Pb-Free
High surge capability.
•
Guardring for overvoltage protection.
RoHS product for packing code suffix ”G”
•
Ultra high-speed switching.
•
free product for packing
metal silicon junction.
Halogen
Silicon epitaxial planar chip,
code suffix “H”
Epitaxial
Lead-free parts meet environmental standards of
•
Planar Die Construction
MIL-STD-19500 /228
Complementary NPN Types Available
RoHS product for packing code suffix "G"
•
Biasing Resistors
Built-In
Halogen free product for packing code suffix
Epoxy meets UL 94 V-0 flammability rating
"H"
Mechanical data
Moisure Sensitivity Level 1
Marking: E21
: UL94-V0 rated flame retardant
•
Epoxy
•
Case : Molded plastic, SOD-123H
,
•
Terminals :Plated terminals, solderable per MIL-STD-750
Parameter
•
Polarity : Indicated by cathode band
Collector current
•
Mounting Position : Any
Input voltage
Power dissipation
•
Weight : Approximated 0.011 gram
Junction temperature
Storage temperature
MAXIMUM
SOT-323
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
.096(2.45)
.078(2.00)
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
.010(0.25)
.003(0.08)
0.031(0.8) Typ.
Method 2026
Absolute maximum ratings @ 25
Symbol
I
C
V
IN
P
d
T
j
T
stg
RATINGS
.087(2.20)
Min
Typ
Max
Unit
Dimensions in inches and (millimeters)
---
100
---
mA
.070(1.80)
-5
---
+10
V
---
200
---
mW
---
150
---
-55
---
150
AND ELECTRICAL CHARACTERISTICS
.054(1.35)
.045(1.15)
RATINGS
Electrical Characteristics @ 25
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
.056(1.40)
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M
Marking
Symbol
Code
Parameter
Min
Typ
Maximum
Input voltage (V
CC
=5V, I
O
=100 A)
Recurrent Peak Reverse Voltage
V
I(off)
0.3
V
RRM
---
---
V
RMS
---
V
Maximum RMS Voltage
(V
O
=0.3V, I
O
=20mA)
I(on)
V
O(on)
Output voltage (I
O
=10mA,I
i
=0.5mA)
---
---
Maximum DC Blocking Voltage
I
I
Input current (V
I
=5V)
---
V
DC
---
I
O(off)
---
I
O
---
Maximum
Output current (V
CC
=50V, V
Current
Average Forward Rectified
I
=0)
G
DC current gain (V
O
=5V, I
O
=5mA)
33
---
I
Peak Forward Surge Current 8.3 ms single half sine-wave
0.7
R
1
Input resistance
I
FSM
1.0
R
2
/R
1
Resistance
load
8
10
superimposed on rated
ratio
(JEDEC method)
Transition frequency
Typical Thermal Resistance (Note 2)
---
R
ΘJA
250
f
T
(V
O
=10V, I
O
=5mA, f=100MHz)
Typical Junction Capacitance (Note 1)
C
J
Operating Temperature Range
Storage Temperature Range
---
MHz
T
J
TSTG
-55 to +125
.016(0.40)
40
.008(0.20)
120
in inches and (millimeters)
-55 to +150
Dimensions
-
65
to +175
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
Suggested Solder
Pad Layout
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-M
V
F
0.50
0.70
0.90
0.70
.043(1.10)
.032(0.80)
12
Max
20
---
14
3.0
0.3
20
7.2
0.5
---
1.3
12
13
Unit
30
V
21
V
V
30
mA
A
K
14
40
28
40
15
50
35
.047(1.20)
16
18
60
80
10
100
70
100
115
150
105
150
120
200
140
200
42
56
80
50
60
.004(0.10)MAX.
1.0
30
0.85
0.9
0.92
@T A=125℃
I
R
0.5
10
1.90
mm
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
0.65
0.65
2012-
0
2012-06
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC COR
WILLAS [ WILLAS ELECTRONIC CORP ]
