FM120-M
DTA144EUA
THRU
PNP Digital Transistor
FM1200-M
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123
•
Batch process design, excellent power dissipation offers
WILLAS
PACKAGE
Pb Free Produc
Features
Package outline
SOD-123H
.004(0.10)MIN.
•
Features
•
•
Mechanical data
isolation to allow negative biasing of the input. They also have the
advantage of
:
almost completely eliminating parasitic effects.
•
Epoxy UL94-V0 rated flame retardant
Only the on/off conditions need to be set for operation, making
•
Case : Molded plastic, SOD-123H
device design easy
,
•
Terminals :Plated terminals, solderable per MIL-STD-750
Method 2026
0.024(0.6)
.010(0.25)
.003(0.08)
0.031(0.8) Typ.
0.031(0.8) Typ.
Typ
Max
Unit
-50
---
V
V
IN
Input voltage
---
10
V
-30
I
O
Output
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
current
---
---
mA
I
C(MAX)
-100
P
d
Power
ambient temperature unless otherwise specified.
---
---
200
mW
Ratings at 25℃
dissipation
T
j
Junction temperature
resistive of inductive
---
150
---
Single phase half wave, 60Hz,
load.
T
stg
capacitive load, derate current by 20%
Storage temperature
-55
---
150
For
RATINGS
Min
---
-40
.056(1.40)
Marking Code
Electrical Characteristics @ 25
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M
.047(1.20)
Maximum Recurrent Peak Reverse Voltage
V
RRM
Max
Symbol
Parameter
Min
Typ
28
Maximum RMS Voltage
(V
CC
=-5V, I
O
=-100A)
V
RMS
---
14
---
V
I(off)
-0.5
Input voltage
---
DC
---
20
-3.0
V
I(on)
(V
O
=-0.3V, I
O
=-2mA)
Maximum DC Blocking Voltage
40
V
V
O(on)
Output voltage (I
O
/I
I
-10mA/-0.5mA
=
---
---
-0.3
Maximum Average Forward Rectified Current
I
I
=
I
-5V)
Input current (V
---
I
O
---
-0.18
I
O(off)
Output current (V
CC
=
I
0)
=-50V, V
---
---
-0.5
Peak Forward Surge Current 8.3 ms single half sine-wave
G
I
DC current gain (V
O
=-5V, I
O
-5mA)
=
68
I
FSM
---
---
superimposed on
resistance
(JEDEC method)
rated load
R
1
Input
32.9
47
61.1
K¡
Typical
Resistance ratio
R
R
2
/R
1
Thermal Resistance (Note 2)
0.8
ΘJA
1.0
1.2
MHz
Transition frequency
Typical Junction Capacitance (Note 1)
f
T
---
C
J
250
---
(V
O
=-10V, I
O
=5mA, f=100MHz)
-55 to +125
Operating Temperature Range
T
J
Storage Temperature Range
TSTG
12
20
Dimensions in inches and
+150
-55 to
(millimeters)
-
65
to +175
120
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
*Marking:
Rated DC Blocking Voltage
Suggested
FM1100-MH
FM1150-MH
FM1200-MH
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH
Solder
V
F
0.50
0.70
10
0.90
Pad Layout
0.85
0.70
0.5
.043(1.10)
.032(0.80)
13
30
Unit
21
V
30
V
V
mA
A
14
40
15
50
35
16
60
.054(1.35)
.045(1.15)
•
maximum ratings @ 25
Absolute
Polarity : Indicated by cathode band
Symbol
•
Mounting Position : Any
Parameter
V
CC
Supply voltage
•
Weight : Approximated 0.011 gram
Dimensions in inches and (millimeters)
.087(2.20)
.070(1.80)
18
80
56
10
100
70
.096(2.45)
.078(2.00)
0.040(1.0)
•
•
•
better reverse leakage current and thermal resistance.
•
Low profile surface mounted application in order to
optimize board space.
•
Low power loss, high efficiency.
•
High current capability, low forward voltage drop.
Pb-Free package is available
•
High surge capability.
RoHS product for
overvoltage protection.
”G”
•
Guardring for
packing code suffix
•
Ultra high-speed
for packing code suffix “H”
Halogen free product
switching.
Epoxy meets
epitaxial planar chip, metal
rating
junction.
•
Silicon
UL 94 V-0 flammability
silicon
Moisure Sensitivity Level 1
•
Lead-free parts meet environmental standards of
Built-in
MIL-STD-19500
enable the configuration of an inverter circuit
bias resistors
/228
•
connecting external
code
resistors
without
RoHS product for packing
input
suffix "G"
Halogen free
consist of thin-film resistors
The bias resistors
product for packing code suffix "H"
with complete
SOT-323
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
115
150
105
150
120
200
140
42
50
.004(0.10)MAX.
80
60
100
1.0
30
.016(0.40)
.008(0.20)
40
200
0.9
0.92
@T A=125℃
16
I
R
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
1.90 mm
2- Thermal Resistance From Junction to Ambient
0.65
0.65
2012-
0
2012-06
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC COR
WILLAS [ WILLAS ELECTRONIC CORP ]
