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DTA144EE 参数 Datasheet PDF下载

DTA144EE图片预览
型号: DTA144EE
PDF下载: 下载PDF文件 查看货源
内容描述: PNP晶体管数字 [PNP Digital Transistor]
分类和应用: 晶体晶体管
文件页数/大小: 2 页 / 314 K
品牌: WILLAS [ WILLAS ELECTRONIC CORP ]
 浏览型号DTA144EE的Datasheet PDF文件第2页  
FM120-M
DTA144EE
THRU
PNP Digital Transistor
FM1200-M
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123
Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
Low profile surface mounted application in order to
optimize board space.
Low power loss, high efficiency.
High current capability, low forward voltage drop.
High surge capability.
Guardring for
is available
Pb-Free package
overvoltage protection.
product for packing code
RoHS
Ultra high-speed switching.
suffix ”G”
Silicon epitaxial planar chip, metal silicon junction.
Halogen free product for
environmental standards of
Lead-free parts meet
packing code suffix “H”
Epoxy
MIL-STD-19500
V-0 flammability rating
meets UL 94
/228
RoHS product for packing code suffix "G"
Moisure Sensitivity Level 1
Built-in
Halogen free product for packing code suffix "H"
of an inverter
bias resistors enable the configuration
SOD-123H
WILLAS
PACKAGE
Pb Free Produc
Features
Package outline
0.146(3.7)
0.130(3.3)
Features
0.012(0.3) Typ.
SOT-523
0.071(1.8)
0.056(1.4)
 
V
CC
Supply voltage
---
-50
---
V
MAXIMUM RATINGS AND ELECTRICAL
10
CHARACTERISTICS
V
IN
Input voltage
-40
---
V
-30
I
O
Ratings at
Output
ambient temperature unless otherwise specified.
---
25℃
current
---
mA
I
C(MAX)
-100
Single phase half
dissipation
P
d
Power
wave, 60Hz, resistive of inductive load.
150
---
---
mW
For
j
capacitive load,
temperature
T
Junction
derate current by 20%
---
150
---
T
stg
Storage temperature
-55
---
150
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
RATINGS
.004(0.10)MIN.
without connecting external input resistors
Mechanical data
The bias resistors consist of thin-film resistors with complete
Epoxy : UL94-V0 rated flame retardant
isolation to allow negative biasing of the input. They also have the
Case :
almost completely eliminating parasitic effects.
advantage of
Molded plastic, SOD-123H
,
Only
Terminals
conditions need to be set for operation, making
the on/off
:Plated terminals, solderable per MIL-STD-750
Method 2026
device design easy
Polarity : Indicated by cathode band
maximum ratings
Absolute
Mounting Position : Any
@ 25
Symbol
Weight : Approximated 0.011 gram
Parameter
Min
Typ
Max
Unit
circuit
.035(0.90)
.028(0.70)
.067(1.70)
.059(1.50)
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
0.031(0.8) Typ.
.014(0.35)
.010(0.25)
Dimensions in inches and (millimeters)
.043(1.10)
.035(0.90)
Marking Code
Maximum Recurrent Peak Reverse
Electrical Characteristics
Voltage
@ 25
V
RRM
V
RMS
Min
V
DC
-0.5
---
I
O
---
 
---
I
FSM
---
68
R
ΘJA
32.9
C
J
0.8
T
---
J
TSTG
12
20
14
Typ
---
20
---
---
---
---
---
47
1.0
250
13
30
14
40
15
50
35
50
16
60
42
60
1.0
 
30
18
80
56
.069(1.75)
.057(1.45)
10
100
70
115
150
105
150
120
200
140
200
 
-
65
to +175
 
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
 
.014(0.35)
.006(0.15)
0.85
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
.035(0.90)
.028(0.70)
Maximum RMS Voltage
Symbol
Parameter
Maximum DC Blocking Voltage
=-5V, I
O
=-100­A)
V
I(off)
Input voltage (V
CC
V
I(on)
(V
O
=-0.3V, I
O
=-2mA)
Maximum Average Forward Rectified Current
V
O(on)
Output voltage (I
O
/I
I
-10mA/-0.5mA
=
I
=
ms single half sine-wave
Peak
I
Forward
Input current (V
I
-5V)
Surge Current 8.3
I
O(off)
Output current (V
CC
=
I
0)
=-50V, V
superimposed on rated load (JEDEC method)
G
I
DC current gain (V
O
=-5V, I
O
-5mA)
=
Typical Thermal Resistance (Note 2)
R
1
Input resistance
Typical Junction Capacitance (Note 1)
R
2
/R
1
Resistance ratio
Transition
Range
Operating Temperature
frequency
f
T
(V
O
=-10V, I
O
=5mA, f=100MHz)
Storage Temperature Range
21
28
Max
Unit
---
30
V
40
V
-3.0
-0.3
V
-0.18
mA
­A
-0.5
---
 
61.1
 
1.2
-55 to +125
---
MHz
.008(0.20)
100
80
.004(0.10)
 
 
40
.004(0.10)MAX.
120
 
-55 to +150
 
V
F
@T A=125℃
0.50
0.70
0.5
10
0.9
0.92
 
*Marking: 16
I
R
Dimensions in inches and (millimeters)
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
 
 
2012-06
2012-
0
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP