FM120-M
DTA143EUA
THRU
PNP Digital Transistor
FM1200-M
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123
•
Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
WILLAS
PACKAGE
Pb Free Produc
Features
Package outline
SOD-123H
•
Low profile surface mounted application in order to
optimize board space.
Electrical Characteristics @ 25
RATINGS
---
10
V
-100
Output
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
current
---
---
mA
I
C(MAX)
-100
Ratings at 25℃
dissipation
P
d
Power
ambient temperature unless otherwise specified.
---
---
200
mW
T
j
Junction
wave, 60Hz, resistive of inductive
---
temperature
150
---
Single phase half
load.
T
stg
capacitive load, derate current by 20%
Storage temperature
-55
---
150
For
Typ
---
---
---
---
---
---
4.7
1.0
250
V
IN
I
O
Input voltage
-30
---
MHz
Typical Junction Capacitance (Note 1)
Operating Temperature Range
Storage Temperature Range
C
J
T
J
TSTG
-55 to +125
40
.008(0.20)
120
Dimensions in inches
-55 to +150
and (millimeters)
.016(0.40)
-
65
to +175
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
.043(1.10)
.032(0.80)
Symbol
Code
Parameter
Min
Marking
V
I(off)
-0.5
Input voltage (V
CC
=-5V, I
O
=-100A)
Maximum Recurrent Peak Reverse Voltage
V
RRM
---
V
I(on)
(V
O
=-0.3V, I
O
=-20mA)
Maximum RMS Voltage
=
I
-10mA/-0.5mA
V
V
O(on)
Output voltage (I
O
/I
---
RMS
I
I
=
I
-5V)
Input current (V
---
DC
Maximum DC Blocking Voltage
V
I
O(off)
Output current (V
CC
=
I
0)
=-50V, V
---
Maximum Average Forward Rectified Current
I
O
G
I
DC current gain (V
O
=-5V, I
O
-10mA)
=
30
R
1
Input resistance
3.29
Peak Forward Surge Current 8.3 ms single half sine-wave
I
R
2
/R
1
Resistance ratio
0.8
FSM
superimposed on rated load (JEDEC method)
Transition frequency
f
T
---
(V
o
=
Resistance (Note 2)
Typical Thermal
-10V, I
o
=5mA, f=100MHz)
R
ΘJA
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
.056(1.40)
12
Max
13
Unit
V
20
---
30
V
-3.0
14
-0.3
21
V
20
-1.8
30
mA
A
-0.5
---
6.11
K¡
1.2
14
40
28
40
15
50
35
50
.047(1.20)
18
16
60
80
.054(1.35)
.045(1.15)
•
Low power loss, high efficiency.
•
High current capability, low forward voltage drop.
•
High surge capability.
•
Pb-Free package
overvoltage protection.
•
Guardring for
is available
•
product for packing code
RoHS
Ultra high-speed switching.
suffix ”G”
•
Silicon epitaxial planar chip, metal silicon junction.
Halogen free product for packing code suffix
of
•
Lead-free parts meet environmental standards
“H”
MIL-STD-19500 /228
•
Epoxy meets UL 94 V-0 flammability rating
•
RoHS product for packing code suffix "G"
•
Moisure Sensitivity Level 1
•
Built-in
Halogen free product for packing code suffix "H"
an inverter circuit
bias resistors enable the configuration of
Mechanical data
without connecting external input resistors
•
The bias resistors consist of
flame retardant
•
Epoxy : UL94-V0 rated
thin-film resistors with complete
isolation to allow negative biasing of the input. They also have the
•
Case : Molded plastic, SOD-123H
advantage of almost completely eliminating parasitic effects.
,
•
Terminals :Plated terminals, solderable per MIL-STD-750
•
Only the on/off conditions need to be set for operation, making
Method 2026
device design easy
•
Polarity : Indicated by cathode band
Absolute maximum ratings @ 25
•
Mounting Position : Any
Symbol
Parameter
Min
Typ
Max
Unit
V
CC
Supply
: Approximated 0.011 gram
---
-50
---
V
•
Weight
voltage
Features
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
SOT-323
.004(0.10)MIN.
0.071(1.8)
0.056(1.4)
.096(2.45)
.078(2.00)
0.031(0.8) Typ.
0.040(1.0)
0.024(0.6)
.010(0.25)
.003(0.08)
0.031(0.8) Typ.
Dimensions in inches and (millimeters)
.087(2.20)
.070(1.80)
10
100
70
100
115
150
105
150
120
200
140
200
42
60
1.0
30
56
80
.004(0.10)MAX.
V
F
0.50
0.70
*Marking:
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
13
@T A=125℃
I
R
Suggested Solder
0.85
Pad Layout
0.5
0.70
10
mm
0.9
0.92
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
0.90
1.90
0.65
0.65
2012-06
WILLAS ELECTRONIC COR
2012-
0
WILLAS ELECTRONIC CORP.
WILLAS [ WILLAS ELECTRONIC CORP ]
