FM120-M
DTA143EE
THRU
PNP Digital Transistor
FM1200-M
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123
•
Batch process design, excellent power dissipation offers
WILLAS
PACKAGE
Pb Free Produc
Features
Package outline
SOD-123H
•
Features
•
•
Mechanical data
isolation to allow negative biasing of the input. They also have the
advantage of
: UL94-V0 rated flame retardant
parasitic effects.
•
Epoxy
almost completely eliminating
Only the on/off conditions need to be set for operation, making
•
Case : Molded plastic, SOD-123H
device design easy
,
•
Terminals :Plated terminals, solderable per MIL-STD-750
Method 2026
.035(0.90)
.028(0.70)
•
•
•
better reverse leakage current and thermal resistance.
•
Low profile surface mounted application in order to
optimize board space.
•
Low power loss, high efficiency.
•
High current capability, low forward voltage drop.
Pb-Free package is available
•
High surge capability.
RoHS
•
product for packing code suffix ”G”
Guardring for overvoltage protection.
Halogen free product
switching.
•
Ultra high-speed
for packing code suffix “H”
Epoxy
•
meets UL 94 V-0 flammability rating
junction.
Silicon epitaxial planar chip, metal silicon
Moisure Sensitivity Level 1
•
Lead-free parts meet environmental standards of
MIL-STD-19500 /228
Built-in bias resistors enable the configuration of an inverter circuit
•
connecting
for packing code suffix "G"
without
RoHS product
external input resistors
Halogen free product
of thin-film resistors with complete
The bias resistors consist
for packing code suffix "H"
SOT-523
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
.067(1.70)
.059(1.50)
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
.014(0.35)
0.031(0.8) Typ.
.010(0.25)
.043(1.10)
.035(0.90)
Polarity : Indicated by cathode
Absolute
•
maximum ratings @ 25
band
Dimensions in inches and (millimeters)
Symbol
•
Mounting Position : Any
Parameter
Min
Typ
Max
Unit
V
CC
Supply voltage
---
-50
---
V
•
Weight : Approximated 0.011 gram
V
IN
Input voltage
-30
---
10
V
-100
I
O
Output
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
current
---
---
mA
I
C(MAX)
-100
P
d
Power
ambient temperature unless otherwise specified.
---
---
150
mW
Ratings at 25℃
dissipation
T
j
Junction temperature
resistive of inductive
---
150
---
Single phase half wave, 60Hz,
load.
T
stg
Storage temperature
-55
---
150
For capacitive load, derate current by 20%
.004(0.10)MIN.
16
60
42
60
1.0
30
18
80
RATINGS
Marking Code
Maximum
Characteristics @ 25
Electrical
Recurrent Peak Reverse Voltage
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M
V
RRM
12
20
13
30
14
40
15
50
35
50
.069(1.75)
.057(1.45)
10
100
100
-55
.014(0.35)
to +150
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
Rated DC Blocking Voltage
-
65
to +175
.006(0.15)
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
Maximum Average Reverse Current at @T A=25℃
*Marking: 13
V
F
43
or
I
R
0.50
0.9
0.70
0.85
Dimensions in inches and (millimeters)
0.5
10
.035(0.90)
.028(0.70)
Maximum RMS Voltage
Parameter
V
Symbol
Min
RMS
Typ
14
Max
21
Unit
28
V
I(off)
-0.5
DC
---
20
---
30
V
Maximum
Input voltage
Voltage
DC Blocking
(V
CC
=-5V, I
O
=-100A)
40
V
---
---
V
V
I(on)
(V
O
=-0.3V, I
O
=-20mA)
-3.0
Maximum Average Forward Rectified Current
V
O(on)
Output voltage (I
O
/I
I
-10mA/-0.5mA
=
---
I
O
---
-0.3
V
I
I
=
I
-5V)
Input current (V
---
---
-1.8
mA
Peak Forward Surge Current 8.3 ms single half sine-wave
A
I
O(off)
Output current (V
CC
=
I
0)
=-50V, V
---
I
FSM
---
-0.5
superimposed on rated load (JEDEC method)
G
I
DC current gain (V
O
=-5V, I
O
-10mA)
=
30
---
---
Typical Thermal
resistance
(Note 2)
R
R
1
Input
Resistance
3.29
ΘJA
4.7
6.11
K¡
R
2
/R
1
Junction Capacitance (Note 1)
0.8
C
J
1.0
1.2
Typical
Resistance ratio
Operating
Transition frequency
Temperature Range
f
T
---
T
J
250
---
-55 to +125
MHz
(V
o
=-10V, I
o
=5mA, f=100MHz)
Storage Temperature Range
TSTG
.008(0.20)
56
70
.004(0.10)
80
115
150
105
150
120
200
140
200
.004(0.10)MAX.
40
120
0.92
@T A=125℃
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-
0
2012-06
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC COR
WILLAS [ WILLAS ELECTRONIC CORP ]
