FM120-M
DTA143ECA
THRU
PNP Digital Transistor
FM1200-M
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123
design, excellent
•
Batch process
ON Characteristics
power dissipation offers
-10
WILLAS
PACKAGE
Features
Typical Characteristics
outline
Package
OFF Characteristics
SOD-123H
Pb Free Produc
-100
-30
V
I(ON)
-10
OUTPUT CURRENT
-3
-1
better reverse leakage current and thermal resistance.
in order
•
Low profile surface mounted application
V
O
=-0.3V
to
optimize board space.
•
Low power loss, high efficiency.
•
High current capability, low forward voltage drop.
•
High surge capability.
•
Guardring for overvoltage protection.
•
Ultra high-speed switching.
•
Silicon epitaxial planar chip, metal silicon junction.
T
a
=25
℃
•
Lead-free parts meet environmental standards of
T
a
=100
℃
MIL-STD-19500 /228
•
RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
V
CC
=-5V
-3
0.146(3.7)
0.130(3.3)
(V)
0.012(0.3) Typ.
(mA)
I
0
-1
0.071(1.8)
0.056(1.4)
INPUT VOLTAGE
-0.3
T
a
=100
℃
T
a
=25
℃
-0.1
-0.3
Mechanical data
-0.03
0.040(1.0)
0.024(0.6)
•
Epoxy : UL94-V0 rated flame retardant
-0.1
•
Case : Molded plastic, SOD-123H
-0.1
-1
-10
-100
-0.3
-30
-3
,
OUTPUT CURRENT
(mA)
•
Terminals :Plated terminals,
I
solderable per MIL-STD-750
O
-0.01
-0.0
0.031(0.8) Typ.
-0.4
-0.8
-1.2
-1.6
0.031(0.8) Typ.
-2.0
INPUT VOLTAGE
V
I(OFF)
(V)
Method 2026
1000
•
Polarity : Indicated by cathode band
•
Mounting Position
I
: Any
I
O
G ——
•
Weight : Approximated 0.011 gram
Dimensions in inches and (millimeters)
-1000
V
O(ON)
——
I
O
I
O
/I
I
=20
V
O
=-5V
300
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(mV)
V
O(ON)
-300
DC CURRENT GAIN
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
100
For capacitive load, derate current by 20%
30
G
I
Marking Code
Maximum RMS Voltage
Maximum DC Blocking Voltage
10
Maximum Recurrent Peak Reverse Voltage
T
a
=25
℃
V
RRM
V
RMS
V
DC
I
O
-30
12
20
14
20
OUTPUT VOLTAGE
RATINGS
T
a
=100
℃
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M
-100
T
a
=100
℃
13
30
21
30
-30
14
40
28
40
15
50
35
50
16
60
42
60
1.0
30
-10
18
T
a
=25
℃
80
56
80
10
100
70
100
115
150
105
150
120
200
140
200
Maximum Average Forward Rectified Current
3
Peak Forward Surge Current 8.3 ms single half sine-wave
1
superimposed on rated load (JEDEC method)
I
OUTPUT CURRENT
-0.1
-0.3
-1
-3
-10
O
(mA)
I
FSM
-100
R
ΘJA
C
J
T
J
-30
-100
-200
-10
-1
-3
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
Operating Temperature Range
Storage Temperature Range
C
O
OUTPUT CURRENT
-55 to +125
400
40
120
I
O
(mA)
-55 to +150
P
-
65
—— T
a
to +175
D
(pF)
12
——
V
R
TSTG
f=1MHz
T
a
=25
℃
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
10
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
350
(mW)
V
F
@T A=125℃
0.50
300
0.70
0.5
10
0.85
0.9
0.92
Maximum Average Reverse Current at @T A=25℃
C
O
P
D
POWER DISSIPATION
Rated
8
Blocking Voltage
DC
I
R
250
OUTPUT CAPACITANCE
NOTES:
6
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
200
DTA143ECA
2- Thermal Resistance From Junction to Ambient
4
150
100
2
50
0
-0
-4
-8
-12
-16
-20
0
0
25
50
75
100
a
125
150
2012-
0
2012-06
REVERSE VOLTAGE
V
R
(V)
AMBIENT TEMPERATURE
WILLAS ELECTRONIC CORP.
T
WILLAS
(
℃
)
ELECTRONIC COR
WILLAS [ WILLAS ELECTRONIC CORP ]
