FM120-M
DTA124EE
THRU
PNP Digital Transistor
FM1200-M
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123
•
Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
•
Low profile surface mounted application in order to
optimize board space.
•
Low power loss, high efficiency.
•
High current capability, low forward voltage drop.
•
High surge capability.
Pb-Free package
overvoltage protection.
•
Guardring for
is available
•
product for packing code
RoHS
Ultra high-speed switching.
suffix ”G”
•
Silicon epitaxial planar chip, metal silicon junction.
Halogen free product for
environmental standards of
•
Lead-free parts meet
packing code suffix “H”
Epoxy meets UL 94 V-0 flammability rating
MIL-STD-19500 /228
•
RoHS product
Level 1
Moisure Sensitivity
for packing code suffix "G"
Built-in
Halogen free product for packing code suffix "H"
an inverter
bias resistors enable the configuration of
SOD-123H
WILLAS
PACKAGE
Pb Free Produc
Features
Package outline
•
Features
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
SOT-523
0.071(1.8)
0.056(1.4)
•
•
•
V
CC
Supply voltage
---
-50
---
V
V
IN
Input voltage
-40
---
10
V
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
-30
I
O
Output current
---
---
mA
I
C(MAX)
-100
Ratings at 25℃ ambient temperature unless otherwise specified.
P
d
Power dissipation
---
mW
Single phase half wave, 60Hz, resistive of inductive
---
load.
150
T
j
Junction temperature
---
150
---
For capacitive load, derate current by 20%
T
stg
Storage temperature
-55
---
150
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
RATINGS
Marking Code
.004(0.10)MIN.
without connecting external input resistors
Mechanical data
•
The bias resistors consist of
flame retardant
•
Epoxy : UL94-V0 rated
thin-film resistors with complete
isolation to allow negative biasing of the input. They also have the
•
Case :
almost completely eliminating parasitic effects.
advantage of
Molded plastic, SOD-123H
,
•
Terminals :Plated terminals, solderable per MIL-STD-750
•
Only the on/off conditions need to be set for operation, making
Method 2026
device design easy
•
Polarity : Indicated by cathode band
Absolute maximum ratings @ 25
•
Mounting Position : Any
Symbol
•
Weight : Approximated 0.011 gram
Parameter
Min
Typ
Max
Unit
circuit
.035(0.90)
.028(0.70)
.067(1.70)
.059(1.50)
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
0.031(0.8) Typ.
.014(0.35)
.010(0.25)
.043(1.10)
.035(0.90)
Dimensions in inches and (millimeters)
Electrical
Recurrent Peak Reverse Voltage
Maximum
Characteristics @ 25
250
---
to
MHz
-55 +125
Storage Temperature Range
TSTG
-
65
to +175
.014(0.35)
-55 to +150
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
Rated DC Blocking Voltage
.006(0.15)
0.85
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
.035(0.90)
.028(0.70)
Symbol
Parameter
Maximum RMS Voltage
V
I(off)
Input voltage (V
CC
=-5V, I
O
=-100A)
Maximum DC Blocking Voltage
V
I(on)
(V
O
=-0.2V, I
O
=-5mA)
V
O(on)
Output voltage (I
Rectified Current
=
I
-10mA/-0.5mA
Maximum Average Forward
O
/I
I
I
=
I
-5V)
Input current (V
I
O(off)
Output current
8.3 ms single
0)
=-50V, V
Peak Forward Surge Current
(V
CC
=
I
half sine-wave
G
I
DC current
load (JEDEC method)
gain (V
O
=-5V, I
O
-5mA)
=
superimposed on rated
R
1
Input resistance
Typical Thermal Resistance (Note 2)
R
2
/R
1
Resistance ratio
Typical Junction Capacitance (Note 1)
Transition frequency
f
T
(V
O
=-10V, I
O
Range
Operating Temperature
=5mA, f=100MHz)
V
RRM
Min
V
RMS
-0.5
V
---
DC
---
I
O
---
---
I
FSM
56
15.4
R
ΘJA
0.8
C
J
---
T
J
Typ
14
Max
21
Unit
---
---
V
---
20
-3.0
30
V
---
-0.3
V
---
-0.36
mA
A
---
-0.5
---
---
22
28.6
K¡
1.0
1.2
12
20
13
30
14
40
28
40
15
50
35
50
16
60
42
60
1.0
30
18
80
.069(1.75)
.057(1.45)
10
100
115
150
105
150
120
200
140
200
56
.008(0.20)
70
.004(0.10)
100
80
.004(0.10)MAX.
40
120
*Marking:
Maximum Average Reverse Current at @T A=25℃
@T A=125℃
15
V
F
I
R
0.50
Dimensions in inches and (millimeters)
0.5
10
0.70
0.9
0.92
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-
0
2012-06
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC COR
WILLAS [ WILLAS ELECTRONIC CORP ]
