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DTA124ECA 参数 Datasheet PDF下载

DTA124ECA图片预览
型号: DTA124ECA
PDF下载: 下载PDF文件 查看货源
内容描述: PNP晶体管数字 [PNP Digital Transistor]
分类和应用: 晶体晶体管
文件页数/大小: 2 页 / 308 K
品牌: WILLAS [ WILLAS ELECTRONIC CORP ]
 浏览型号DTA124ECA的Datasheet PDF文件第2页  
FM120-M
DTA124ECA
THRU
PNP Digital Transistor
FM1200-M
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123
Batch process design, excellent power dissipation offers
WILLAS
PACKAGE
Pb Free Produ
Features
Package outline
SOD-123H
DTA124ECA
better reverse leakage current and thermal resistance.
Features
profile surface mounted application in order to
Low
 
Electrical Characteristics @ 25
RATINGS
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
Max
12
---
20
-3.0
Unit
13
V
30
V
.008(0.20)
Symbol
Parameter
Min
Typ
Marking Code
-0.5
---
V
I(off)
Input voltage (V
CC
=-5V, I
O
=-100­A)
Maximum Recurrent Peak Reverse Voltage
V
---
RRM
---
V
I(on)
(V
O
=-0.2V, I
O
=-5mA)
V
O(on)
---
RMS
---
Maximum
Output voltage (I
O
/I
I
-10mA/-0.5mA
RMS Voltage
=
V
I
I
=
I
-5V)
Input current
Voltage
(V
---
---
Maximum DC Blocking
V
DC
I
O(off)
Output current (V
CC
=
I
0)
=-50V, V
---
---
Maximum
DC current gain (V
O
=-5V, I
O
-5mA)
Average Forward Rectified Current
G
I
=
56
I
O
---
 
 
R
1
Input resistance
15.4
22
Peak Forward Surge Current 8.3 ms single half sine-wave
R
2
/R
1
Resistance ratio
0.8
I
FSM
1.0
superimposed on rated load (JEDEC method)
Transition frequency
f
T
---
250
(V
O
=-10V, I
O
=5mA, f=100MHz)
Typical Thermal Resistance (Note 2)
R
ΘJA
Typical Junction Capacitance (Note 1)
Operating Temperature Range
Storage Temperature Range
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M
.003(0.08)
14
40
28
40
15
50
16
60
18
80
56
80
1.0
 
.020(0.50)
30
.012(0.30)
.083(2.10)
.110(2.80)
Symbol
Parameter
Min
Typ
Max
Unit
Method 2026
V
CC
Supply voltage
---
-50
---
V
Dimensions in inches and (millimeters)
Polarity : Indicated by cathode band
V
IN
Input voltage
-40
---
10
V
Mounting Position : Any
Output current
-30
I
O
---
---
mA
I
C(MAX)
-100
Power dissipation
Weight : Approximated 0.011 gram
P
d
---
200
---
mW
T
j
Junction temperature
---
150
---
ELECTRICAL CHARACTERISTICS
T
stg
Storage
MAXIMUM RATINGS AND
-55
temperature
---
150
Ratings at 25℃ ambient temperature unless otherwise specified.
.006(0.15)MIN.
High current capability, low forward voltage drop.
Halogen free product for packing code suffix “H”
High surge capability.
Guardring
94 V-0 flammability rating
Epoxy
meets UL
for overvoltage protection.
Ultra high-speed switching.
Moisure Sensitivity Level 1
Silicon epitaxial planar
the
metal silicon
of an inverter circuit
Built-in bias resistors enable
chip,
configuration
junction.
connecting external input resistors
without
Lead-free parts meet environmental standards of
MIL-STD-19500 /228
The bias resistors consist of thin-film resistors with complete
RoHS product for packing code
of the input. They also have the
isolation to allow negative biasing
suffix "G"
Halogen free product for packing code suffix "H"
advantage of almost completely eliminating parasitic effects.
Mechanical data
Only the on/off conditions need to be set for operation, making
device
design
:
easy
Epoxy UL94-V0 rated flame retardant
Case : Molded plastic, SOD-123H
Absolute
maximum ratings @ 25
solderable per MIL-STD-750 ,
Terminals :Plated terminals,
optimize board space.
Pb-Free package is available
Low power loss, high efficiency.
RoHS product for packing code suffix ”G”
SOT-23
.063(1.60)
.047(1.20)
.122(3.10)
.106(2.70)
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
.080(2.04)
.070(1.78)
0.031(0.8) Typ.
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
10
100
70
100
115
150
105
150
.055(1.40)
.035(0.89)
120
200
140
200
14
-0.3
21
V
20
-0.36
30
mA
­A
-0.5
---
28.6
1.2
---
35
42
.004(0.10)MAX.
50
60
 
 
MHz
C
J
T
J
TSTG
 
-55 to +125
 
40
Dimensions in inches and (millimeters)
120
 
-55 to +150
 
-
65
to +175
 
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
 
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
V
F
@T A=125℃
0.50
0.70
*Marking: 15
I
R
.035
.900
Suggested Solder
0.85
Pad Layout
0.5
.031
10
.800
0.9
0.92
 
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
 
 
.079
2.000
inches
mm
.037
.950
.037
.950
2012-
0
2012-06
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC COR