FM120-M
DTA123JUA
THRU
PNP Digital Transistor
FM1200-M
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123
•
Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
optimize board
Features
power loss,space.efficiency.
high
•
Low
WILLAS
PACKAGE
Pb Free Produ
Features
Package outline
SOD-123H
•
Low profile surface mounted application in order to
Pb-Free
High current capability, low forward voltage drop.
•
package is available
RoHS product for packing code suffix ”G”
•
High surge capability.
•
free product for packing code suffix “H”
Halogen
Guardring for overvoltage protection.
•
Ultra
UL 94 V-0 flammability rating
•
Epoxy meets
high-speed switching.
•
Sensitivity Level 1
•
Moisure
Silicon epitaxial planar chip, metal silicon junction.
•
Built-in
•
Lead-free parts meet environmental standards of
bias resistors enable the configuration of an inverter circuit
MIL-STD-19500 /228
without connecting external input resistors
RoHS product for packing code suffix "G"
•
•
The bias resistors consist of thin-film resistors with complete
Halogen free product for packing code suffix "H"
isolation to allow negative biasing of the input. They also have the
Mechanical data
advantage of almost completely eliminating parasitic effects.
•
on/off
UL94-V0 rated flame retardant
•
Only the
Epoxy :
conditions need to be set for operation, making
device design
:
easy
plastic, SOD-123H
•
Case Molded
,
•
Terminals
ratings @ 25
Absolute maximum
:Plated terminals, solderable per MIL-STD-750
.004(0.10)MIN.
•
SOT-323
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
.096(2.45)
.078(2.00)
.010(0.25)
.003(0.08)
0.031(0.8) Typ.
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
Method 2026
Typ
Max
Unit
.087(2.20)
Symbol
Parameter
Min
---
V
V
CC
Supply voltage
---
-50
.070(1.80)
Dimensions in inches and (millimeters)
•
Polarity : Indicated by cathode band
---
V
V
IN
Input voltage
-12
5
•
Mounting Position : Any
-100
I
O
---
mA
Output current
---
-100
I
C(MAX)
•
Weight : Approximated 0.011 gram
---
mW
P
d
Power dissipation
---
200
---
T
j
Junction temperature
150
MAXIMUM RATINGS AND
---
ELECTRICAL CHARACTERISTICS
---
150
T
stg
Storage temperature
-55
Ratings at 25℃ ambient temperature unless otherwise specified.
Electrical Characteristics @ 25
RATINGS
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
Max
12
---
20
-1.1
14
-0.3
-3.6
20
-0.5
---
2.86
26
---
Unit
13
V
30
V
21
V
mA
30
A
.056(1.40)
Symbol
Parameter
Min
Typ
Marking Code
V
I(off)
-0.5
---
Input voltage (V
CC
=-5V, I
O
=-100A)
Maximum Recurrent Peak Reverse Voltage
V
RRM
---
---
V
I(on)
(V
O
=-0.3V, I
O
=-5mA)
Maximum RMS Voltage
(I
O
/I
I
-5mA/-0.25mA
V
O(on)
Output voltage
=
---
V
RMS
---
I
Maximum DC Blocking
(V
I
-5V)
=
Input current
Voltage
---
V
DC
---
I
I
O(off)
Output current (V
CC
=
I
0)
=-50V, V
---
---
Maximum Average Forward Rectified Current
G
I
DC current gain (V
O
=-5V, I
O
-10mA)
=
80
I
O
---
R
1
Input resistance
1.54
2.2
Peak Forward Surge Current 8.3 ms single half sine-wave
R
2
/R
1
Resistance ratio
17
I
FSM
21
superimposed on rated load (JEDEC method)
Transition frequency
f
T
---
250
(V
O
=-10V, I
O
=5mA, f=100MHz)
Typical Thermal Resistance (Note 2)
R
ΘJA
Typical Junction Capacitance (Note 1)
Operating Temperature Range
Storage Temperature Range
.047(1.20)
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-
14
40
28
40
15
50
16
60
.054(1.35)
.045(1.15)
18
80
56
80
10
100
70
100
.043(1.10)
.032(0.80)
115
150
105
150
120
200
140
200
35
42
.004(0.10)MAX.
50
60
K¡
MHz
C
J
T
J
TSTG
-55 to +125
1.0
30
.016(0.40)
.008(0.20)
40
120
Dimensions in inches and (millimeters)
-55 to +150
-
65
to +175
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
Rated DC Blocking Voltage
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-M
Maximum Average Reverse Current at @T A=25℃
*Marking: 132
V
F
@T A=125℃
0.50
0.70
Suggested Solder
Pad Layout
0.85
0.5
0.70
10
0.9
0.92
I
R
0.90
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
1.90
mm
0.65
0.65
2012-06
2012-
0
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC COR
WILLAS [ WILLAS ELECTRONIC CORP ]
